Agilent ABA-31563
3.5 GHz Broadband Silicon
RFIC Amplifier
Data Sheet
Features
• Operating Frequency DC ~ 3.5GHz
• 21.5 dB Gain
• VSWR < 2.0 throughout operating
frequency
• 2.2 dBm Output P1dB
Description
Agilent’s ABA-31563 is an
economical, easy-to-use, inter-
nally 50Ω matched, silicon
monolithic broadband amplifier
that offers excellent gain and
broadband response from DC to
3.5 GHz. Packaged in an ultra-
miniature SOT-363 package, it
requires half the board space of
a SOT-143 package.
At 2 GHz, the ABA-31563 offers
a small-signal gain of 21.5 dB,
output P1dB of 2.2 dBm and
13.1 dBm output third order
intercept point. It is suitable for
use as wideband applications.
They are designed for low cost
gain blocks in cellular applica-
tions, DBS tuners, LNB and other
wireless communication systems.
ABA-31563 is fabricated using
Agilent’s HP25 silicon bipolar
process, which employs a double-
diffused single polysilicon
process with self-aligned submi-
cron emitter geometry. The
process is capable of simulta-
neous high f
T
and high NPN
breakdown (25 GHz f
T
at 6V
BVCEO). The process utilizes
industry standard device oxide
isolation technologies and
submicron aluminum multilayer
interconnect to achieve superior
performance, high uniformity,
and proven reliability.
Surface Mount Package
SOT-363/SC70
• 13.1 dBm Output IP3
• 3.8 dB Noise Figure
• Unconditionally Stable
• Single 3V Supply (Id = 14 mA)
• Lead-free
Applications
• Amplifier for Cellular, Cordless,
Special Mobile Radio, PCS, ISM,
Wireless LAN, DBS, TVRO, and TV
Tuner Applications
Pin Connections and
Package Marking
GND 1
Output
& Vcc
1Kx
GND 2
Input
GND 3
Vcc
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1B)
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.
Note:
Top View. Package marking provides orientation
and identification. “x” is the date code.
Simplified Schematic
Vcc
RF
Output
& Vcc
RF
Input
Ground 2
Ground 3
Ground 1
ABA-31563 Absolute Maximum Ratings
[1]
Symbol
V
cc
P
in
P
diss
T
j
T
STG
Parameter
Device Voltage, RF output to ground (T = 25°C)
CW RF Input Power (Vcc = 3V)
Total Power Dissipation
[3]
Junction Temperature
Storage Temperature
Units
V
dBm
W
°C
°C
Absolute Max.
6
15
0.3
150
-65 to 150
Thermal Resistance
[2]
(Vcc = 3V)
θ
j-c
= 125°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using 150°C
Liquid Crystal Measurement Technique.
3. Board (package belly) temperature, Tc, is
25°C. Derate 2.3 mW/°C for Tc > 120.8°C.
Electrical Specifications
T
c
= +25°C, Z
o
= 50
Ω,
P
in
= -30 dBm, V
cc
= 3V, Freq = 2 GHz, unless stated otherwise.
Symbol
Gp
[1]
∆Gp
NF
[1]
P1dB
[1]
OIP3
[1]
VSWR
in[1]
VSWR
out[1]
Icc
[1]
Td
[1]
Parameter and Test Condition
Power Gain (|S
21
|
2
)
Power Gain Flatness,
Noise Figure
Output Power at 1dB Gain Compression
Output Third Order Intercept Point
Input VSWR
Output VSWR
Device Current
Group Delay
f = 0.1 ~ 2.5 GHz
f = 0.1 ~ 3.5 GHz
Units
dB
dB
dB
dBm
dBm
Min.
20.0
Typ.
21.5
0.2
1.3
3.8
2.2
13.1
<1.5
<1.5
Max.
Std Dev.
4.8
mA
ps
14
140
16
Notes:
1. Measurements taken on 50Ω test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard
deviation and typical data based on at least 500 parts sample size from 2 wafer lots. Future wafers allocated to this product may have nominal values
anywhere within the upper and lower spec limits.
C
block
1 nF
RF Output
1Kx
RFC
33 nH
RF Input
C
block
1 nF
Vcc
C
bypass
100 pF
C
bypass
1000 pF
Figure 1. ABA-31563 Production Test Circuit.
2
ABA-31563 Typical Performance
T
c
= +25°C, Z
o
= 50Ω, V
cc
= 3V unless stated otherwise.
23
22
21
23
22
21
6
5.5
5
3.5V
3V
2.7V
GAIN (dB)
GAIN (dB)
20
19
18
17
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
3.5V
3V
2.7V
20
19
18
17
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
+85°C
+25°C
-40°C
NF (dB)
4.5
4
3.5
3
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
Figure 2. Gain vs. Frequency and Voltage.
Figure 3. Gain vs. Frequency and Temperature.
Figure 4. Noise Figure vs. Frequency and
Voltage.
6
6
5.5
5
+85°C
+25°C
-40°C
6
4
4
P1dB (dBm)
NF (dB)
2
P1dB (dBm)
3.5V
3V
2.7V
2
4.5
4
3.5
3
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
0
0
+85°C
+25°C
-40°C
-2
-2
-4
0
0.5
1
1.5
2
2.5
3
3.5
4
-4
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency and
Temperature.
Figure 6. Output Power for 1 dB Gain
Compression vs. Frequency and Voltage.
Figure 7. Output Power for 1 dB Gain
Compression vs. Frequency and Temperature.
3
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