V
DRM
I
TGQM
I
TSM
V
T0
r
T
V
DClin
=
=
=
=
=
=
2500
2500
16
1.66
0.57
1400
V
A
kA
V
mΩ
V
Gate turn-off Thyristor
5SGA 25H2501
Doc. No. 5SYA1206-01 Dec. 04
•
Patented free-floating silicon technology
•
Low on-state and switching losses
•
Annular gate electrode
•
Industry standard housing
•
Cosmic radiation withstand rating
Blocking
V
DRM
V
RRM
I
DRM
I
RRM
V
DClink
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Repetitive peak off-state current
Repetitive peak reverse current
Permanent DC voltage for 100
FIT failure rate
≤
≤
2500
17
30
50
1400
V
V
mA
mA
V
V
D
= V
DRM
V
R
= V
RRM
V
GR
≥
2V
R
GK
=
∞
V
GR
≥
2V
-40
≤
T
j
≤
125 °C. Ambient cosmic
radiation at sea level in open air.
Mechanical data
(see Fig. 19)
F
m
Mounting force
A
Acceleration:
Device unclamped
Device clamped
M
D
S
D
a
Weight
Surface creepage distance
Air strike distance
≥
≥
50 m/s
2
200 m/s
2
0.8 kg
22 mm
13 mm
min.
max.
17 kN
24 kN
ABB Semiconductors AG reserves the right to change specifications without notice.
5SGA 25H2501
GTO Data
On-state
I
TAVM
I
TRMS
I
TSM
Max. average on-state current
Max. RMS on-state current
Max. peak non-repetitive
surge current
I
2
t
Limiting load integral
830 A
1300 A
16 kA
32 kA
2
1.28⋅10
6
A s
2
0.51⋅10
6
A s
Half sine wave, T
C
= 85 °C
t
P
t
P
t
P
t
P
I
T
I
T
=
=
=
=
=
10 ms
1 ms
10 ms
1 ms
2500 A
T
j
=
125°C
After surge:
V
D
= V
R
= 0V
V
T
V
T0
r
T
I
H
On-state voltage
Threshold voltage
Slope resistance
Holding current
3.10 V
1.66 V
0.57 mΩ
50 A
= 200 - 3000
3000 A
T
j
=
125 °C
T
j
= 25 °C
Gate
V
GT
I
GT
V
GRM
I
GRM
Gate trigger voltage
Gate trigger current
Repetitive peak reverse voltage
Repetitive peak reverse current
1.0
2.5
17
50
V
A
V
mA
V
G
= V
GRM
V
D
R
A
= 24 V
= 0.1
Ω
T
j
=
25 °C
Turn-on switching
di/dt
crit
Max. rate of rise of on-state
current
t
d
t
r
t
on(min)
E
on
Delay time
Rise time
Min. on-time
Turn-on energy per pulse
400 A/µs
700 A/µs
1.5 µs
3.5 µs
120 µs
0.85 Ws
f = 200Hz
f = 1Hz
V
D
=
I
T
=
I
T
= 2500 A,
T
j
= 125 °C
I
GM
= 30 A, di
G
/dt = 20 A/µs
0.5 V
DRM
T
j
2500 A
30 A
6 µF
=
125 °C
200 A/µs
20 A/µs
5
Ω
di/dt =
di
G
/dt =
R
S
=
I
GM
=
C
S
=
Turn-off switching
I
TGQM
Max controllable turn-off
current
t
s
t
f
t
off(min)
E
off
I
GQM
Storage time
Fall time
Min. off-time
Turn-off energy per pulse
Peak turn-off gate current
24.0 µs
2.0 µs
80 µs
3.5 Ws
700 A
2500 A
V
DM
= V
DRM
C
S
V
D
T
j
= 6 µF
= ½ V
DRM
=
di
GQ
/dt =
L
S
V
DM
≤
=
30 A/µs
0.3 µH
V
DRM
30 A/µs
125 °C di
GQ
/dt =
I
TGQ
= I
TGQM
C
S
L
S
=
≤
6 µF R
S
0.3 µH
=
5
Ω
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1206-01 Jun. 04
page 2 of 9
5SGA 25H2501
Thermal
T
j
R
thJC
Storage and operating
junction temperature range
Thermal resistance
junction to case
R
thCH
Thermal resistance case to
heat sink
Analytical function for transient thermal
impedance:
30 K/kW
39 K/kW
17 K/kW
10 K/kW
5 K/kW
Anode side cooled
Cathode side cooled
Double side cooled
Single side cooled
Double side cooled
-40...125°C
Z
thJC
(t) =
∑
4
i
1
11.7
0.9
2
4.7
0.26
3
0.64
0.002
4
0.0001
0.001
R
i
(1 - e
- t /
τ
i
)
R
I
(K/kW)
τ
i
(s)
i
=
1
Fig. 1
Transient thermal impedance, junction to case.
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1206-01 Jun. 04
page 3 of 9
5SGA 25H2501
Fig. 2
On-state characteristics
Fig. 3
Average on-state power dissipation vs.
average on-state current.
Fig. 4
Surge current and fusing integral vs. pulse
width
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1206-01 Jun. 04
page 4 of 9
5SGA 25H2501
Fig. 5
Forward blocking voltage vs. gate-cathode
resistance.
Fig. 6
Static dv/dt capability: Forward blocking
voltage vs. neg. gate voltage or gate
cathode resistance.
Fig. 7
Forwarde gate current vs. forard gate
voltage.
Fig. 8
Gate trigger current vs. junction
temperature
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1206-01 Jun. 04
page 5 of 9
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