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CM400DY-50H

Description
HIGH POWER SWITCHING USE INSULATED TYPE
CategoryDiscrete semiconductor    The transistor   
File Size47KB,4 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

CM400DY-50H Overview

HIGH POWER SWITCHING USE INSULATED TYPE

CM400DY-50H Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMitsubishi
package instructionFLANGE MOUNT, R-XUFM-X9
Reach Compliance Codeunknow
Shell connectionISOLATED
Maximum collector current (IC)400 A
Collector-emitter maximum voltage2500 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X9
Number of components2
Number of terminals9
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)3470 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)3000 ns
Nominal on time (ton)3000 ns
VCEsat-Max4.16 V
MITSUBISHI HVIGBT MODULES
CM400DY-50H
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
CM400DY-50H
q
I
C ...................................................................
400A
q
V
CES .......................................................
2500V
q
Insulated Type
q
2-elements in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
130
114
57
±0.25
57
±0.25
4 - M8 NUTS
20
C2
E1
C2
C2
G2
E2
C1
G1
E1
E1
124
±0.25
140
40
E2
CM
C1
E2
E1
CIRCUIT DIAGRAM
E2(C1)
G1
G2
C2
6 -
φ
7 MOUNTING HOLES
24.5
53.6
61.5
15
5.7
15
39.5
7.2
5 - M4 NUTS
36.3
48.8
18
38
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
28
5
30
LABEL
Mar. 2003
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