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PG05BAUSM

Description
UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size323KB,2 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Environmental Compliance
Download Datasheet Parametric View All

PG05BAUSM Overview

UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE

PG05BAUSM Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerKEC
package instructionUSM, 3 PIN
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum breakdown voltage7.14 V
Minimum breakdown voltage6.46 V
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-G3
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Certification statusNot Qualified
Maximum repetitive peak reverse voltage5 V
surface mountYES
technologyAVALANCHE
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
PG05BAUSM
TVS Diode for ESD
Protection in Portable Electronics
FEATURES
Transient protection for data lines to
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)
Small package for use in portable electronics.
Suitable replacement for Multi-Layer Varistors in ESD protection applications.
Protects one I/O or power line.
Low clamping voltage.
Low leakage current.
C
L
2
A
J
G
1
M
E
B
M
D
3
H
N
K
N
DIM
A
B
C
D
E
G
H
J
K
L
M
N
MILLIMETERS
_
2.00 + 0.20
_
1.25 + 0.15
_
0.90 + 0.10
0.3+0.10/-0.05
_
2.10 + 0.20
0.65
0.15+0.1/-0.06
1.30
0.00~0.10
0.70
0.42
0.10 MIN
APPLICATIONS
Cell phone handsets and accessories.
Microprocessor based equipment.
Personal digital assistants (PDA s)
Notebooks, desktops, & servers.
Portable instrumentation.
Pagers peripherals.
1. (TVS) D1 CATHODE
2. (TVS) D2 CATHODE
3. COMMON ANODE
USM
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Total Power Dissipation
Junction Temperature
Storage Temperature
)
SYMBOL
P
PK
T
j
T
stg
RATING
200
150
-55 150
UNIT
mW
Marking
Type Name
BA
3
D
2
2
D
1
1
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Junction Capacitance
SYMBOL
V
RWM
V
BR
I
R
C
J
I
t
=5mA
V
RWM
=5V
V
R
=0V, f=1MHz
TEST CONDITION
-
MIN.
-
6.46
-
-
TYP.
-
-
-
3
MAX.
5
7.14
0.5
-
UNIT
V
V
A
pF
2007. 9. 10
Revision No : 2
1/2
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