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PG05BSESC

Description
30 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size323KB,2 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Environmental Compliance
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PG05BSESC Overview

30 W, UNIDIRECTIONAL, SILICON, TVS DIODE

PG05BSESC Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PDSO-F2
Contacts2
Manufacturer packaging codeESC
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum breakdown voltage7.45 V
Minimum breakdown voltage6.65 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-F2
Maximum non-repetitive peak reverse power dissipation30 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Certification statusNot Qualified
Maximum repetitive peak reverse voltage5 V
surface mountYES
technologyAVALANCHE
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
PG05BSESC
TVS Diode for ESD
Protection in Portable Electronics
FEATURES
Transient voltage protection for data lines.
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact).
Small package for portable electronics.
Suitable replacement for Varistors in ESD protection applications.
Protects one I/O or power line.
Low clamping voltage.
Low leakage current.
CATHODE MARK
C
1
E
2
D
F
B
A
APPLICATIONS
Cell phone handsets and accessories.
Microprocessor based equipment.
Personal digital assistants (PDA s).
Notebooks, desktops, & servers.
Portable instrument
Pagers peripherals.
1. ANODE
2. CATHODE
DIM
A
B
C
D
E
F
MILLIMETERS
_
1.60 + 0.10
_
1.20 + 0.10
_
0.80 + 0.10
_
0.30 + 0.05
_
0.60 + 0.10
_
0.13 + 0.05
ESC
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Peak Pulse Power (tp=8/20 )
Peak Pulse Current (tp=8/20 )
Junction Temperature
Storage Temperature
)
SYMBOL
P
PK
I
PP
T
j
T
stg
RATING
30
1.6
150
-55 150
UNIT
W
A
Marking
Type Name
D2
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Claming Voltage
Series Resistance
Junction Capacitance
SYMBOL
V
RWM
V
BR
I
R
V
C
R
S
C
J
I
t
=5mA
V
RWM
=3.5V
I
PP
=1A, tp=8/20
I
PP
=1.6A, tp=8/20
V
R
=1V, f=900MHz
V
R
=0V, f=1MHz
TEST CONDITION
-
MIN.
-
6.65
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
MAX.
5
7.45
0.5
12
18
60
5.0
pF
UNIT
V
V
A
V
V
2007. 5. 15
Revision No : 1
1/2

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