BY4_07 datasheet, PDF - EEWORLD Datasheet

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BY4_07: Description1 A, 4000 V, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size41KB，1 Pages; ManufacturerDIOTEC; Websitehttp://www.diotec.com/

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BY4_07 Overview

1 A, 4000 V, SILICON, SIGNAL DIODE

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BY4 ... BY16

High Voltage Si-Rectifiers

Si-Hochspannungs-Gleichrichter

Version 2006-09-07

Nominal current

Nennstrom

6.3

1 A ... 0.3 A

4000...16000 V

Ø 6.3 x 21 [mm]

1.9 g

Repetitive peak reverse voltage

Periodische Spitzensperrspannung

Plastic case

Kunststoffgehäuse

±0.5

Weight approx.

Gewicht ca.

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Ø 1.2

±0.05

Standard packaging bulk

Standard Lieferform ungegurtet

Dimensions - Maße [mm]

Maximum ratings and Characteristics

Type

Typ

BY4

BY6

BY8

BY12

BY16

Grenz- und Kennwerte

Forward volt.

Durchlass-Spg.

[V]

)

< 4.0

< 6.0

< 8.0

< 10.0

< 15.0

Rep. peak reverse volt. Surge peak reverse volt. Max. forward current

Period. Spitzensperrspg. Stoßspitzensperrspg.

Dauergrenzstrom

RRM

[V]

RSM

[V]

FAV

[A]

)

4000

6000

8000

12000

16000

4000

6000

8000

12000

16000

1.0

0.5

0.3

Leakage Current

Sperrstrom

Peak forward surge current, 50 Hz half sine-wave

Stoßstrom für eine 50 Hz Sinus-Halbwelle

Rating for fusing, t < 10 ms

Grenzlastintegral, t < 10 ms

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

= 25°C

= 100°C

= 25°C

= V

RRM

= V

RRM

FSM

< 1 µA

< 25 µA

100 A

50 A

-50...+150°C

< 25 K/W

)

thA

Valid, if leads are kept at ambient temperature T

= 50°C at a distance of 10 mm from case

Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur T

= 50°C gehalten werden

At / Bei I

FAV

= 25°C

http://www.diotec.com/

BY4_07 Related Products

	BY4_07	BY4	BY6	BY8	BY16	BY12
Description	1 A, 4000 V, SILICON, SIGNAL DIODE	1 A, 4000 V, SILICON, SIGNAL DIODE	1 A, 6000 V, SILICON, RECTIFIER DIODE	0.5 A, 8000 V, SILICON, SIGNAL DIODE	SILICON, RECTIFIER DIODE	SILICON, RECTIFIER DIODE
Is it Rohs certified?	-	conform to	conform to	conform to	conform to	conform to
Maker	-	DIOTEC	DIOTEC	DIOTEC	-	DIOTEC
package instruction	-	O-PALF-W2	ROHS COMPLIANT, PLASTIC PACKAGE-2	O-PALF-W2	ROHS COMPLIANT, PLASTIC PACKAGE-2	ROHS COMPLIANT, PLASTIC PACKAGE-2
Contacts	-	2	2	2	2	2
Reach Compliance Code	-	compli	compli	compli	compli	compli
ECCN code	-	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	-	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	-	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	-	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	-	4 V	6 V	8 V	15 V	8 V
JESD-30 code	-	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Humidity sensitivity level	-	1	1	1	1	1
Maximum non-repetitive peak forward current	-	100 A	100 A	100 A	100 A	100 A
Number of components	-	1	1	1	1	1
Number of terminals	-	2	2	2	2	2
Maximum operating temperature	-	150 °C	150 °C	150 °C	150 °C	150 °C
Maximum output current	-	1 A	1 A	0.5 A	0.3 A	0.5 A
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	-	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Peak Reflow Temperature (Celsius)	-	260	260	260	260	260
Certification status	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	-	4000 V	6000 V	8000 V	16000 V	12000 V
surface mount	-	NO	NO	NO	NO	NO
Terminal form	-	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	-	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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