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BY8

Description
0.5 A, 8000 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size41KB,1 Pages
ManufacturerDIOTEC
Websitehttp://www.diotec.com/
Environmental Compliance
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BY8 Overview

0.5 A, 8000 V, SILICON, SIGNAL DIODE

BY8 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDIOTEC
package instructionO-PALF-W2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)8 V
JESD-30 codeO-PALF-W2
Humidity sensitivity level1
Maximum non-repetitive peak forward current100 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-50 °C
Maximum output current0.5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage8000 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
BY4 ... BY16
BY4 ... BY16
High Voltage Si-Rectifiers
Si-Hochspannungs-Gleichrichter
Version 2006-09-07
Nominal current
Nennstrom
6.3
1 A ... 0.3 A
4000...16000 V
Ø 6.3 x 21 [mm]
1.9 g
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Plastic case
Kunststoffgehäuse
65
±0.5
21
Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Ø 1.2
±0.05
Standard packaging bulk
Standard Lieferform ungegurtet
Dimensions - Maße [mm]
Maximum ratings and Characteristics
Type
Typ
BY4
BY6
BY8
BY12
BY16
Grenz- und Kennwerte
Forward volt.
Durchlass-Spg.
V
F
[V]
2
)
< 4.0
< 6.0
< 8.0
< 10.0
< 15.0
Rep. peak reverse volt. Surge peak reverse volt. Max. forward current
Period. Spitzensperrspg. Stoßspitzensperrspg.
Dauergrenzstrom
V
RRM
[V]
V
RSM
[V]
I
FAV
[A]
1
)
4000
6000
8000
12000
16000
4000
6000
8000
12000
16000
1.0
1.0
0.5
0.5
0.3
Leakage Current
Sperrstrom
Peak forward surge current, 50 Hz half sine-wave
Stoßstrom für eine 50 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
T
j
= 25°C
T
j
= 100°C
T
A
= 25°C
T
A
= 25°C
V
R
= V
RRM
V
R
= V
RRM
I
FSM
i
2
t
< 1 µA
< 25 µA
100 A
50 A
2
s
-50...+150°C
-50...+150°C
< 25 K/W
1
)
T
j
T
S
R
thA
1
2
Valid, if leads are kept at ambient temperature T
A
= 50°C at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur T
A
= 50°C gehalten werden
At / Bei I
FAV
,T
j
= 25°C
http://www.diotec.com/
© Diotec Semiconductor AG
1

BY8 Related Products

BY8 BY4_07 BY4 BY6 BY16 BY12
Description 0.5 A, 8000 V, SILICON, SIGNAL DIODE 1 A, 4000 V, SILICON, SIGNAL DIODE 1 A, 4000 V, SILICON, SIGNAL DIODE 1 A, 6000 V, SILICON, RECTIFIER DIODE SILICON, RECTIFIER DIODE SILICON, RECTIFIER DIODE
Is it Rohs certified? conform to - conform to conform to conform to conform to
Maker DIOTEC - DIOTEC DIOTEC - DIOTEC
package instruction O-PALF-W2 - O-PALF-W2 ROHS COMPLIANT, PLASTIC PACKAGE-2 ROHS COMPLIANT, PLASTIC PACKAGE-2 ROHS COMPLIANT, PLASTIC PACKAGE-2
Contacts 2 - 2 2 2 2
Reach Compliance Code compli - compli compli compli compli
ECCN code EAR99 - EAR99 EAR99 EAR99 EAR99
Shell connection ISOLATED - ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE - SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON - SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 8 V - 4 V 6 V 15 V 8 V
JESD-30 code O-PALF-W2 - O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Humidity sensitivity level 1 - 1 1 1 1
Maximum non-repetitive peak forward current 100 A - 100 A 100 A 100 A 100 A
Number of components 1 - 1 1 1 1
Number of terminals 2 - 2 2 2 2
Maximum operating temperature 150 °C - 150 °C 150 °C 150 °C 150 °C
Maximum output current 0.5 A - 1 A 1 A 0.3 A 0.5 A
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND - ROUND ROUND ROUND ROUND
Package form LONG FORM - LONG FORM LONG FORM LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) 260 - 260 260 260 260
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 8000 V - 4000 V 6000 V 16000 V 12000 V
surface mount NO - NO NO NO NO
Terminal form WIRE - WIRE WIRE WIRE WIRE
Terminal location AXIAL - AXIAL AXIAL AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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