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MBR540

Description
5 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size65KB,2 Pages
ManufacturerETC
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MBR540 Overview

5 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD

MBR540
Wide Temperature Range and High T
jm
Schottky Barrier Rectifiers
Dimensions TO-220AC
A
C(TAB)
A
C
C
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
A=Anode, C=Cathode, TAB=Cathode
V
RRM
V
40
V
RMS
V
28
V
DC
V
40
MBR540
Inches
Min.
Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
-
0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Milimeter
Min.
Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54
4.08
5.85
6.85
2.54
3.42
1.15
1.77
-
6.35
0.64
0.89
4.83
5.33
3.56
4.82
0.38
0.56
2.04
2.49
0.64
1.39
Symbol
I
(AV)
I
FSM
V
F
I
R
C
J
R
OJC
T
J
T
STG
Characteristics
Maximum Average Forward Rectified Current
@T
C
=95
o
C
Maximum Ratings
5
175
0.55
@T
J
=25
o
C
@T
J
=100
o
C
0.5
33
350
3.5
-55 to +125
-55 to +150
Unit
A
A
V
mA
pF
o
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Maximum Forward Voltage At 5.0A DC (Note 1)
Maximum DC Reverse Current
At Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
C/W
o
o
C
C
NOTES: 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
3. Thermal Resistance Junction To Case.
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low V
F
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MECHANICAL DATA
* Case: TO-220AC molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any

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