2N5109
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
•
Screening and processing per MIL-PRF-19500
Appendix E
•
JAN level (2N5109J)
•
JANTX level (2N5109JX)
•
JANTXV level (2N5109JV)
•
JANS level (2N5109JS)
•
QCI to the applicable level
•
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
•
Radiation testing (total dose) upon request
Applications
•
General purpose
•
VHF-UHF amplifier transistor
•
NPN silicon transistor
Features
•
•
•
•
Hermetically sealed TO-39 metal can
Also available in chip configuration
Chip geometry 1009
Reference document:
MIL-PRF-19500/453
Benefits
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
•
Qualification Levels: JAN, JANTX,
JANTXV and JANS
•
Radiation testing available
T
C
= 25°C unless otherwise specified
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T
A
= 25°C
Derate linearly above 25°C
Power Dissipation, T
C
= 25°C
Derate linearly above 25°C
Thermal Resistance
Operating Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
P
T
Rating
20
40
3
400
1
5.71
2.9
16.6
175
-65 to +200
-65 to +200
Unit
Volts
Volts
Volts
mA
W
mW/°C
W
mW/°C
°C/W
°C
°C
R
θJA
T
J
T
STG
Copyright 2002
Rev. D
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N5109
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25°C
Off Characteristics
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Cutoff Current
On Characteristics
Parameter
DC Current Gain
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Open Circuit Output Capacitance
Power Gain (narrow band) current
Cross Modulation
Noise Figure
Voltage Gain (wideband)
Symbol
|h
FE1
|
|h
FE2
|
|h
FE3
|
C
OBO
G
PE
cm
NF
G
Test Conditions
V
CE
= 15 Volts, f = 200 MHz,
I
C
= 25 mA
I
C
= 50 mA
I
C
= 100 mA
V
CB
= 5 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
V
CC
= 15 Volts, I
C
= 50 mA,
f = 200 MHz, P
in
= -10 dB
V
CC
= 15 Volts, I
C
= 50 mA,
54 dB output
V
CC
= 15 Volts, I
C
= 10 mA,
f = 200 MHz, P
in
= -10 dB
V
CC
= 15 Volts, I
C
= 50 mA,
50 MHz < f < 216 MHz,
P
in
= -10dB
Min
5
6
5
Typ
Max
10.0
11.0
10.5
3.5
11
-57
3.5
11
pF
dB
dB
dB
dB
Units
Symbol
h
FE1
h
FE2
V
CEsat
Test Conditions
I
C
= 50 mA, V
CE
= 15 Volts
I
C
= 50 mA, V
CE
= 5 Volts
T
A
= -55°C
I
C
= 100 mA, I
B
= 10 mA
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)CER
V
(BR)EBO
I
CEO1
I
CEO2
Test Conditions
I
C
= 100
µA
I
C
= 5 mA
I
C
= 5 mA, R
BE
= 10
Ω
I
E
= 100
µA
V
CE
= 15 Volts
V
CE
= 15 Volts, T
A
= 175°C
Min
40
20
40
3
20
5
Typ
Max
Units
Volts
Volts
Volts
Volts
µA
mA
Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤
2.0%
Min
40
15
Typ
Max
150
Units
0.5
Volts
Copyright 2002
Rev. D
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
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