AP60T03AH/J
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Low Gate Charge
▼
Fast Switching
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
30V
12mΩ
45A
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP60T03AJ) are available for low-profile applications.
GD
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
±20
45
32
120
44
0.352
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
3.4
110
Units
℃/W
℃/W
Data and specifications subject to change without notice
200909033
AP60T03AH/J
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
30
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.03
-
-
-
25
-
-
-
11.6
3.9
7
8.8
57.5
18.5
6.4
1135
200
135
Max. Units
-
-
12
25
3
-
1
250
±100
-
-
-
-
-
-
-
-
-
-
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=20A
V
GS
=4.5V, I
D
=15A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
2
Drain-Source Leakage Current (T
j
=25 C)
Drain-Source Leakage Current (T
j
=175
o
C)
o
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=10A
V
DS
=30V, V
GS
=0V
V
DS
=24V ,V
GS
=0V
V
GS
= ±20V
I
D
=20A
V
DS
=24V
V
GS
=4.5V
V
DS
=15V
I
D
=20A
R
G
=3.3Ω,V
GS
=10V
R
D
=0.75Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Test Conditions
I
S
=45A, V
GS
=0V
I
S
=20A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
23.3
16
Max. Units
1.3
-
-
V
ns
nC
Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP60T03AH/J
125
90
100
T
C
=25 C
o
10V
8.0V
I
D
, Drain Current (A)
6.0V
60
T
C
=175 C
o
10V
8.0V
6.0V
5.0V
I
D
, Drain Current (A)
75
5.0V
50
30
V
G
=4.0V
25
V
G
=4.0V
0
0.0
1.0
2.0
3.0
4.0
0
0.0
1.0
2.0
3.0
4.0
5.0
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
2
I
D
=15A
T
C
=25
℃
60
1.6
I
D
=20A
V
G
=10V
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
40
1.2
20
0.8
0
2
4
6
8
10
0.4
-50
25
100
175
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.8
100
2.3
10
V
GS(th)
(V)
1.5
Tj=175
o
C
I
S
(A)
Tj=25
o
C
1.8
1.3
1
0.8
0.1
0
0.5
1
0.3
-50
25
100
175
V
SD
(V) , Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AP60T03AH/J
f=1.0MHz
12
10000
I
D
=20A
V
GS
, Gate to Source Voltage (V)
V
DS
=16V
V
DS
=20V
V
DS
=24V
9
Ciss
1000
6
C (pF)
Coss
Crss
100
3
0
10
0
6
12
18
24
1
8
15
22
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (R
thjc
)
Duty Factor = 0.5
100
0.2
I
D
(A)
0.1
100us
1ms
10
0.1
0.05
0.02
0.01
Single Pulse
P
DM
t
T
Duty Factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
T
C
=25 C
Single Pulse
1
0.1
1
10
o
10ms
100ms
DC
100
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
R
D
V
DS
TO THE
OSCILLOSCOPE
0.5 x RATED V
DS
TO THE
OSCILLOSCOPE
D
R
G
+
10V
-
G
S
V
DS
D
0.8 x RATED VDS
G
S
V
GS
V
GS
+
1~ 3 mA
-
I
G
2E+08
I
D
Fig 11. Switching Time Circuit
Fig 12. Gate Charge Circuit
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