1N4151W datasheet, PDF - EEWORLD Datasheet

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1N4151W: Description0.15 A, SILICON, SIGNAL DIODE; CategoryDiscrete semiconductor diode; File Size42KB，2 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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1N4151W Overview

0.15 A, SILICON, SIGNAL DIODE

1N4151W Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	ROHS COMPLIANT, PLASTIC PACKAGE-2
Contacts	2
Reach Compliance Code	compli
ECCN code	EAR99
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JESD-30 code	R-PDSO-G2
Maximum non-repetitive peak forward current	0.5 A
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	0.15 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.5 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	75 V
Maximum reverse recovery time	0.002 µs
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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DATA SHEET

1N4151W

SURFACE MOUNT SWITCHING DIODES

VOLTAGE

FEATURES

• Fast switching Speed.

• Electrically ldentical to Standerd JEDEC

• High Conductance

• Surface Mount Package ldeally Suited for Automatic lnsertion.

SOD-123

.154 (3.90)

.141 (3.60)

Unit: inch ( mm )

50 Volts

POWER

500 mWatts

.028 (0.70)

.019 (0.50)

MECHANICAL DATA

Case: SOD-123 plastic case.

Terminals : Solderable per MIL-STD-202,Method 208

Standard packaging: 8mm tape

Weight: approximately 0.01g

.005(.12) MAX.

.008 (.20) MAX.

.016(.40) MIN.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

=25°C unless otherwise noted)

PAR AMETER

Marki ng C ode

Reverse Voltage

Peak Reverse Voltage

Maxi mum RMS Voltage

Maxi mum D C Blocki ng Voltage

Maxi mum Average Forward C urrent at T =25

Peak Forward Surge C urrent, 1.0s si ngle half si ne-wave

superi mposed on rated load (JED EC method)

Power D i ssi pati on D erate Above 25

Maxi mum Forward Voltage

Maxi mum D C Reverse C urrent at Rated D C Blocki ng Voltage

= 25

Typi cal Juncti on C apaci tance( Notes1)

Maxi mum Reverse Recovery (Notes2)

Maxi mum Thermal Resi stance

Storage T mperature Range

SYMB OL

1N4151W

UNITS

RMS

FSM

TOT

RqJA

150

0.5

500

1.0@0.01A

0.05

400

.053 (1.35)

.037 (.95)

.071 (1.80)

.055 (1.40)

.110 (2.80)

.098 (2.50)

C /W

NOTE:

1. CJ at V

=0, f=1MHZ

2.From I

=10mA to I

=1mA, V

=6Volts, R

=100Ω

DATE : APR.02.2003

PAGE . 1

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