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2SK3689-01

Description
STD LQg MOSFET
File Size108KB,4 Pages
ManufacturerETC
Download Datasheet View All

2SK3689-01 Overview

STD LQg MOSFET

2SK3689-01
FUJI POWER MOSFET
200311
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Super FAP-G Series
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Non-Repetitive
Maximum avalanche current
Non-Repetitive
Maximum avalanche energy
Maximum Drain-Source dV/dt
Peak diode recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Symbol Ratings
V
DS
600
V
DSX
600
I
D
±16
I
D(puls]
±64
V
GS
±30
I
AS
16
E
AS
dV
DS
/dt
dV/dt
P
D
T
ch
T
stg
242.7
20
5
2.50
235
+150
-55 to +150
Unit
V
V
A
A
V
A
mJ
kV/s
kV/µs
W
°C
°C
Remarks
V
GS
=-30V
Tch<150°C
=
L=1.74mH
V
CC
=60V *1
VDS< 600V
=
*2
Ta=25°C
Tc=25°C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
*1 See to Avalanche Energy Graph
*2 I
F
< -I
D
, -di/dt=50A/µs, V
CC
< BV
DSS
, Tch < 150°C
=
=
=
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
= 250µA
V
GS
=0V
I
D
= 250µA
V
DS
=V
GS
V
DS
=600V V
GS
=0V
T
ch
=25°C
V
DS
=480V V
GS
=0V
T
ch
=125°C
V
GS
=±30V V
DS
=0V
I
D
=8A V
GS
=10V
I
D
=8A
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=300V I
D
=8A
V
GS
=10V
R
GS
=10
V
CC
=300V
I
D
=16A
V
GS
=10V
L=1.74mH T
ch
=25°C
I
F
=16A V
GS
=0V T
ch
=25°C
I
F
=16A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
Test Conditions
channel to case
channel to ambient
Min.
600
3.0
Typ.
Max.
5.0
25
250
100
0.57
Units
V
V
µA
nA
S
pF
10
0.42
6.5
13
1590
2390
200
300
8
12
29
43.5
16
24
58
87
8
12
34
51
12
18
10
15
16
1.00
1.50
0.68
7.8
ns
nC
A
V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Min.
Typ.
Max.
0.532
50.0
Units
°C/W
°C/W
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