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DAN803

Description
0.025 A, 80 V, 8 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size157KB,2 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Environmental Compliance
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DAN803 Overview

0.025 A, 80 V, 8 ELEMENT, SILICON, SIGNAL DIODE

DAN803 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PSIP-P9
Contacts9
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationCOMMON CATHODE, 8 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PSIP-P9
JESD-609 codee2
Number of components8
Number of terminals9
Maximum operating temperature150 °C
Minimum operating temperature-50 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.2 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage80 V
Maximum reverse current0.025 µA
Maximum reverse recovery time0.004 µs
Reverse test voltage20 V
surface mountNO
Terminal surfaceTin/Silver (Sn/Ag)
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
DAN 801, DAP 801 (200mW) ...
Diode arrays
Silicon rectifiers arrays
DAN 801, DAP 801 (200mW)
Forward Current: 0,1 A
Reverse Voltage: 80 to / V
Publish Data
Absolute Maximum Ratings
Symbol Conditions
Values
Units
Features
Mechanical Data
Characteristics
Symbol Conditions
Values
Units
Dimensions in mm
1
10-04-2006 SCT
© by SEMIKRON

DAN803 Related Products

DAN803 DAN801 DAN801_06
Description 0.025 A, 80 V, 8 ELEMENT, SILICON, SIGNAL DIODE 0.025 A, 80 V, 8 ELEMENT, SILICON, SIGNAL DIODE 0.025 A, 80 V, 8 ELEMENT, SILICON, SIGNAL DIODE
Is it Rohs certified? conform to conform to -
package instruction R-PSIP-P9 R-PSIP-P9 -
Contacts 9 9 -
Reach Compliance Code unknow unknow -
ECCN code EAR99 EAR99 -
Configuration COMMON CATHODE, 8 ELEMENTS COMMON CATHODE, 8 ELEMENTS -
Diode component materials SILICON SILICON -
Diode type RECTIFIER DIODE RECTIFIER DIODE -
JESD-30 code R-PSIP-P9 R-PSIP-P9 -
JESD-609 code e2 e2 -
Number of components 8 8 -
Number of terminals 9 9 -
Maximum output current 0.1 A 0.1 A -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form IN-LINE IN-LINE -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED -
Certification status Not Qualified Not Qualified -
Maximum repetitive peak reverse voltage 80 V 80 V -
Maximum reverse recovery time 0.004 µs 0.004 µs -
surface mount NO NO -
Terminal surface Tin/Silver (Sn/Ag) Tin/Silver (Sn/Ag) -
Terminal form PIN/PEG PIN/PEG -
Terminal location SINGLE SINGLE -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED -
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