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DAN801_06

Description
0.025 A, 80 V, 8 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size157KB,2 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
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DAN801_06 Overview

0.025 A, 80 V, 8 ELEMENT, SILICON, SIGNAL DIODE

DAN 801, DAP 801 (200mW) ...
Diode arrays
Silicon rectifiers arrays
DAN 801, DAP 801 (200mW)
Forward Current: 0,1 A
Reverse Voltage: 80 to / V
Publish Data
Absolute Maximum Ratings
Symbol Conditions
Values
Units
Features
Mechanical Data
Characteristics
Symbol Conditions
Values
Units
Dimensions in mm
1
10-04-2006 SCT
© by SEMIKRON

DAN801_06 Related Products

DAN801_06 DAN801 DAN803
Description 0.025 A, 80 V, 8 ELEMENT, SILICON, SIGNAL DIODE 0.025 A, 80 V, 8 ELEMENT, SILICON, SIGNAL DIODE 0.025 A, 80 V, 8 ELEMENT, SILICON, SIGNAL DIODE
Is it Rohs certified? - conform to conform to
package instruction - R-PSIP-P9 R-PSIP-P9
Contacts - 9 9
Reach Compliance Code - unknow unknow
ECCN code - EAR99 EAR99
Configuration - COMMON CATHODE, 8 ELEMENTS COMMON CATHODE, 8 ELEMENTS
Diode component materials - SILICON SILICON
Diode type - RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code - R-PSIP-P9 R-PSIP-P9
JESD-609 code - e2 e2
Number of components - 8 8
Number of terminals - 9 9
Maximum output current - 0.1 A 0.1 A
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED
Certification status - Not Qualified Not Qualified
Maximum repetitive peak reverse voltage - 80 V 80 V
Maximum reverse recovery time - 0.004 µs 0.004 µs
surface mount - NO NO
Terminal surface - Tin/Silver (Sn/Ag) Tin/Silver (Sn/Ag)
Terminal form - PIN/PEG PIN/PEG
Terminal location - SINGLE SINGLE
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED
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