PHOTODIODE
InGaAs PIN photodiode
G8422/G8372/G5852 series
Long wavelength type (up to 2.1 µm)
Features
Applications
l
Cut-off wavelength: 2.1 µm
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3-pin TO-18 package: low price
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TE-cooled type TO-8 package: low dark current
l
Active area:
B
0.3 to
B
3 mm
l
Gas analyzer
l
Water content analyzer
l
NIR (Near Infrared) photometry
Accessories (Optional)
s
Specifications / Absolute maximum ratings
Di mensional
Package
outline
Active
area
(mm)
φ0.3
φ0.5
φ1
φ3
φ0.3
φ1
φ3
φ0.3
φ1
φ3
l
Heatsink for one-stage TE-cooled type A3179
l
Heatsink for two-stage TE-cooled type A3179-01
l
Temperature controller for TE-cooled type C1103-04
Thermistor
power
dissipation
(mW)
Absolute maximum ratings
TE-cooler Reverse Operating
Storage
allowable voltage temperature temperature
current
V
R
Topr
Tstg
(A)
(V)
(°C)
(°C)
Type No.
Cooling
G8422-03
G8422-05
G8372-01
G8372-03
G5852-103
G5852-11
G5852-13
G5852-203
G5852-21
G5852-23
➀
➁
➂
TO-18
TO-5
TO-8
Non-cooled
-
-
-40 to +85
-55 to +125
One-stage
TE-cooled
Two-stage
TE-cooled
1.5
0.2
1.0
2
-40 to +70
-55 to +85
➃
TO-8
s
Electrical and optical characteristics (Typ. unless otherwise noted)
M easure ment
Spectral
Peak
Photo
condition
response sensitivity sensitivity
Element
wavelength
S
range
Te m perature
λp
λ=λp
λ
T
Min. Typ.
(°C)
(µm)
(µm) (A/W) (A/W)
25
0.9 to 2.1
Dark current
I
D
V
R
=1 V
Typ.
Max.
(nA)
(nA)
55
550
125
1250
500
5000
5 (µA) 50 (µA)
5.5
55
50
500
500
5000
3
30
25
250
250
2500
Cut-off
frequency
fc
V
R
=1 V
R
L
=50
Ω
(MHz)
100
80
40
3
100
40
3
100
40
3
Terminal
capacitance Shunt
resistance
Ct
Rsh
V
R
=1 V V
R
= 10 m V
f=1 MHz
(pF)
8
20
80
800
8
80
800
8
80
800
(MΩ)
0.9
0.3
0.1
0.01
9
1
0.1
18
2
0.2
D
∗
λ=λp
NEP
λ=λp
Type No.
G8422-03
G8422-05
G8372-01
G8372-03
G5852-103
G5852-11
G5852-13
G5852-203
G5852-21
G5852-23
-10
0.9 to 2.07
1.95
0.9
1.2
-20
0.9 to 2.05
(c m· Hz
1/2
/ W) (W/Hz
1/2
)
1.5 × 10
-13
-13
11
2.5 × 10
2.5 × 10
4 × 10
-13
1.5 × 10
-12
5 × 10
-14
8 × 10
11
1 × 10
-13
4 × 10
-13
3 × 10
-14
1.2 × 10
12
8 × 10
-14
3 × 10
-13
G8422/G8372/G5852 series may be damaged by Electro Static Discharge, etc. Be carefull when using
G8422/G8372/G5852 series.
1
InGaAs PIN photodiode
s
Thermistor temperature characteristic
10
6
(Typ.)
G8422/G8372/G5852 series
s
Cooling characteristics of TE-cooler
40
(Typ. Ta=25 ˚C,
Thermal resistance of heatsink=3
˚C/W)
ELEMENT TEMPERATURE
(˚C)
20
ONE-STAGE
TE-COOLED TYPE
0
RESISTANCE (Ω)
10
5
-20
10
4
-40
TWO-STAGE
TE-COOLED TYPE
10
3
-60
-20
0
20
-40
0
0.4
0.8
1.2
1.6
ELEMENT TEMPERATURE
(˚C)
KIRDB0116EA
CURRENT (A)
KIRDB0231EA
s
Current vs. voltage characteristics of TE-cooler
1.6
1.4
1.2
ONE-STAGE
TE-COOLED TYPE
(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)
CURRENT (A)
1.0
0.8
0.6
0.4
0.2
0
TWO-STAGE
TE-COOLED TYPE
0
0.2
0.4
0.6
0.8
1.0
1.2
VOLTAGE (V)
KIRDB0115EB
3
InGaAs PIN photodiode
s
Dimensional outline (unit: mm)
➀
G8422-03/-05, G8372-01
5.4 ± 0.2
4.7 ± 0.1
WINDOW
3.0 ± 0.1
G8422/G8372/G5852 series
➁
G8372-03
9.2 ± 0.2
0.15 MAX.
3.6 ± 0.2
2.5 ± 0.2
0.4 MAX.
2.7 ± 0.2
13 MIN.
0.45
LEAD
2.5 ± 0.2
0.45
LEAD
5.1 ± 0.3
1.5 MAX.
CASE
CASE
KIRDA0150EA
18 MIN.
PHOTOSENSITIVE
SURFACE
PHOTOSENSITIVE
SURFACE
4.2 ± 0.2
8.1 ± 0.1
WINDOW
5.9 ± 0.1
KIRDA0151EA
➂
G5852-103/-11/-13
15.3 ± 0.2
14 ± 0.2
6.4 ± 0.2
➃
G5852-203/-21/-23
15.3 ± 0.2
14 ± 0.2
10 ± 0.2
6.7 ± 0.2
10.2 ± 0.2
DETECTOR ELEMENT
(ANODE)
DETECTOR ELEMENT
(CATHODE)
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
12 MIN.
DETECTOR ELEMENT
(ANODE)
DETECTOR ELEMENT
(CATHODE)
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
5.1 ± 0.2
KIRDA0029EB
KIRDA0031EB
WINDOW
10 ± 0.2
WINDOW
10 ± 0.2
4.4 ± 0.2
12 MIN.
PHOTOSENSITIVE
SURFACE
0.45
LEAD
10.2 ± 0.2
5.1 ± 0.2
PHOTOSENSITIVE
SURFACE
0.45
LEAD
5.1 ± 0.2
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
5.1 ± 0.2
4
Cat. No. KIRD1047E05
May 2006 DN
MCU
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