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G5852-23

Description
InGaAs PIN photodiode
CategoryLED optoelectronic/LED    photoelectric   
File Size213KB,4 Pages
ManufacturerHamamatsu
Websitehttp://www.hamamatsu.com
Download Datasheet Parametric Compare View All

G5852-23 Overview

InGaAs PIN photodiode

G5852-23 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
MakerHamamatsu
package instructionTO-8, 6 PIN
Reach Compliance Codeunknow
ConfigurationSINGLE
Maximum dark power2500 nA
Infrared rangeYES
Number of functions1
Maximum operating temperature70 °C
Minimum operating temperature-40 °C
Optoelectronic device typesPIN PHOTODIODE
peak wavelength1950 nm
Minimum reverse breakdown voltage2 V
shapeROUND
size3 mm
Base Number Matches1
PHOTODIODE
InGaAs PIN photodiode
G8422/G8372/G5852 series
Long wavelength type (up to 2.1 µm)
Features
Applications
l
Cut-off wavelength: 2.1 µm
l
3-pin TO-18 package: low price
l
TE-cooled type TO-8 package: low dark current
l
Active area:
B
0.3 to
B
3 mm
l
Gas analyzer
l
Water content analyzer
l
NIR (Near Infrared) photometry
Accessories (Optional)
s
Specifications / Absolute maximum ratings
Di mensional
Package
outline
Active
area
(mm)
φ0.3
φ0.5
φ1
φ3
φ0.3
φ1
φ3
φ0.3
φ1
φ3
l
Heatsink for one-stage TE-cooled type A3179
l
Heatsink for two-stage TE-cooled type A3179-01
l
Temperature controller for TE-cooled type C1103-04
Thermistor
power
dissipation
(mW)
Absolute maximum ratings
TE-cooler Reverse Operating
Storage
allowable voltage temperature temperature
current
V
R
Topr
Tstg
(A)
(V)
(°C)
(°C)
Type No.
Cooling
G8422-03
G8422-05
G8372-01
G8372-03
G5852-103
G5852-11
G5852-13
G5852-203
G5852-21
G5852-23
TO-18
TO-5
TO-8
Non-cooled
-
-
-40 to +85
-55 to +125
One-stage
TE-cooled
Two-stage
TE-cooled
1.5
0.2
1.0
2
-40 to +70
-55 to +85
TO-8
s
Electrical and optical characteristics (Typ. unless otherwise noted)
M easure ment
Spectral
Peak
Photo
condition
response sensitivity sensitivity
Element
wavelength
S
range
Te m perature
λp
λ=λp
λ
T
Min. Typ.
(°C)
(µm)
(µm) (A/W) (A/W)
25
0.9 to 2.1
Dark current
I
D
V
R
=1 V
Typ.
Max.
(nA)
(nA)
55
550
125
1250
500
5000
5 (µA) 50 (µA)
5.5
55
50
500
500
5000
3
30
25
250
250
2500
Cut-off
frequency
fc
V
R
=1 V
R
L
=50
(MHz)
100
80
40
3
100
40
3
100
40
3
Terminal
capacitance Shunt
resistance
Ct
Rsh
V
R
=1 V V
R
= 10 m V
f=1 MHz
(pF)
8
20
80
800
8
80
800
8
80
800
(MΩ)
0.9
0.3
0.1
0.01
9
1
0.1
18
2
0.2
D
λ=λp
NEP
λ=λp
Type No.
G8422-03
G8422-05
G8372-01
G8372-03
G5852-103
G5852-11
G5852-13
G5852-203
G5852-21
G5852-23
-10
0.9 to 2.07
1.95
0.9
1.2
-20
0.9 to 2.05
(c m· Hz
1/2
/ W) (W/Hz
1/2
)
1.5 × 10
-13
-13
11
2.5 × 10
2.5 × 10
4 × 10
-13
1.5 × 10
-12
5 × 10
-14
8 × 10
11
1 × 10
-13
4 × 10
-13
3 × 10
-14
1.2 × 10
12
8 × 10
-14
3 × 10
-13
G8422/G8372/G5852 series may be damaged by Electro Static Discharge, etc. Be carefull when using
G8422/G8372/G5852 series.
1

G5852-23 Related Products

G5852-23 G8422-05 G8422_06 G8422-03 G8372-03 G5852-21 G5852-13 G5852-203 G5852-103 G5852-11
Description InGaAs PIN photodiode InGaAs PIN photodiode InGaAs PIN photodiode InGaAs PIN photodiode InGaAs PIN photodiode InGaAs PIN photodiode InGaAs PIN photodiode InGaAs PIN photodiode InGaAs PIN photodiode InGaAs PIN photodiode
Is it lead-free? Contains lead Contains lead - Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead
Maker Hamamatsu Hamamatsu - Hamamatsu Hamamatsu Hamamatsu Hamamatsu Hamamatsu Hamamatsu Hamamatsu
package instruction TO-8, 6 PIN TO-18, 3 PIN - TO-18, 3 PIN TO-5, 3 PIN TO-8, 6 PIN TO-8, 6 PIN TO-8, 6 PIN TO-8, 6 PIN TO-8, 6 PIN
Reach Compliance Code unknow unknow - unknow unknown unknow unknow unknown unknow unknow
Configuration SINGLE SINGLE - SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum dark power 2500 nA 1250 nA - 550 nA 50000 nA 250 nA 5000 nA 30 nA 55 nA 500 nA
Infrared range YES YES - YES YES YES YES YES YES YES
Number of functions 1 1 - 1 1 1 1 1 1 1
Maximum operating temperature 70 °C 85 °C - 85 °C 85 °C 70 °C 70 °C 70 °C 70 °C 70 °C
Minimum operating temperature -40 °C -40 °C - -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
Optoelectronic device types PIN PHOTODIODE PIN PHOTODIODE - PIN PHOTODIODE PIN PHOTODIODE PIN PHOTODIODE PIN PHOTODIODE PIN PHOTODIODE PIN PHOTODIODE PIN PHOTODIODE
peak wavelength 1950 nm 1950 nm - 1950 nm 1950 nm 1950 nm 1950 nm 1950 nm 1950 nm 1950 nm
Minimum reverse breakdown voltage 2 V 2 V - 2 V 2 V 2 V 2 V 2 V 2 V 2 V
shape ROUND ROUND - ROUND ROUND ROUND ROUND ROUND ROUND ROUND
size 3 mm 0.5 mm - 0.3 mm 3 mm 1 mm 3 mm 0.3 mm 0.3 mm 1 mm
Base Number Matches 1 - - - 1 1 1 1 - 1
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