G5852-203 datasheet, PDF - EEWORLD Datasheet

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G5852-203: DescriptionInGaAs PIN photodiode; CategoryLED optoelectronic/LED photoelectric; File Size213KB，4 Pages; ManufacturerHamamatsu; Websitehttp://www.hamamatsu.com

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G5852-203 Overview

InGaAs PIN photodiode

G5852-203 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Maker	Hamamatsu
package instruction	TO-8, 6 PIN
Reach Compliance Code	unknown
Configuration	SINGLE
Maximum dark power	30 nA
Infrared range	YES
Number of functions	1
Maximum operating temperature	70 °C
Minimum operating temperature	-40 °C
Optoelectronic device types	PIN PHOTODIODE
peak wavelength	1950 nm
Minimum reverse breakdown voltage	2 V
shape	ROUND
size	0.3 mm
Base Number Matches	1

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PHOTODIODE

InGaAs PIN photodiode

G8422/G8372/G5852 series

Long wavelength type (up to 2.1 µm)

Features

Applications

Cut-off wavelength: 2.1 µm

3-pin TO-18 package: low price

TE-cooled type TO-8 package: low dark current

Active area:

0.3 to

3 mm

Gas analyzer

Water content analyzer

NIR (Near Infrared) photometry

Accessories (Optional)

Specifications / Absolute maximum ratings

Di mensional

Package

outline

Active

area

(mm)

φ0.3

φ0.5

φ1

φ3

φ0.3

φ1

φ3

φ0.3

φ1

φ3

Heatsink for one-stage TE-cooled type A3179

Heatsink for two-stage TE-cooled type A3179-01

Temperature controller for TE-cooled type C1103-04

Thermistor

power

dissipation

(mW)

Absolute maximum ratings

TE-cooler Reverse Operating

Storage

allowable voltage temperature temperature

current

Topr

Tstg

(A)

(V)

(°C)

Type No.

Cooling

G8422-03

G8422-05

G8372-01

G8372-03

G5852-103

G5852-11

G5852-13

G5852-203

G5852-21

G5852-23

➀

➁

➂

TO-18

TO-5

TO-8

Non-cooled

-40 to +85

-55 to +125

One-stage

TE-cooled

Two-stage

TE-cooled

1.5

0.2

1.0

-40 to +70

-55 to +85

➃

TO-8

Electrical and optical characteristics (Typ. unless otherwise noted)

M easure ment

Spectral

Peak

Photo

condition

response sensitivity sensitivity

Element

wavelength

range

Te m perature

λp

λ=λp

Min. Typ.

(°C)

(µm)

(µm) (A/W) (A/W)

0.9 to 2.1

Dark current

=1 V

Typ.

Max.

(nA)

550

125

1250

500

5000

5 (µA) 50 (µA)

5.5

500

5000

250

2500

Cut-off

frequency

=1 V

=50

Ω

(MHz)

100

Terminal

capacitance Shunt

resistance

Rsh

=1 V V

= 10 m V

f=1 MHz

(pF)

800

(MΩ)

0.9

0.3

0.1

0.01

0.1

0.2

∗

λ=λp

NEP

λ=λp

Type No.

G8422-03

G8422-05

G8372-01

G8372-03

G5852-103

G5852-11

G5852-13

G5852-203

G5852-21

G5852-23

-10

0.9 to 2.07

1.95

0.9

1.2

-20

0.9 to 2.05

(c m· Hz

1/2

/ W) (W/Hz

1/2

)

1.5 × 10

-13

2.5 × 10

4 × 10

-13

1.5 × 10

-12

5 × 10

-14

8 × 10

1 × 10

-13

4 × 10

-13

3 × 10

-14

1.2 × 10

8 × 10

-14

3 × 10

-13

G8422/G8372/G5852 series may be damaged by Electro Static Discharge, etc. Be carefull when using

G8422/G8372/G5852 series.

G5852-203 Related Products

	G5852-203	G8422-05	G8422_06	G8422-03	G8372-03	G5852-21	G5852-23	G5852-13	G5852-103	G5852-11
Description	InGaAs PIN photodiode	InGaAs PIN photodiode	InGaAs PIN photodiode	InGaAs PIN photodiode	InGaAs PIN photodiode	InGaAs PIN photodiode	InGaAs PIN photodiode	InGaAs PIN photodiode	InGaAs PIN photodiode	InGaAs PIN photodiode
Is it lead-free?	Contains lead	Contains lead	-	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Maker	Hamamatsu	Hamamatsu	-	Hamamatsu	Hamamatsu	Hamamatsu	Hamamatsu	Hamamatsu	Hamamatsu	Hamamatsu
package instruction	TO-8, 6 PIN	TO-18, 3 PIN	-	TO-18, 3 PIN	TO-5, 3 PIN	TO-8, 6 PIN	TO-8, 6 PIN	TO-8, 6 PIN	TO-8, 6 PIN	TO-8, 6 PIN
Reach Compliance Code	unknown	unknow	-	unknow	unknown	unknow	unknow	unknow	unknow	unknow
Configuration	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum dark power	30 nA	1250 nA	-	550 nA	50000 nA	250 nA	2500 nA	5000 nA	55 nA	500 nA
Infrared range	YES	YES	-	YES	YES	YES	YES	YES	YES	YES
Number of functions	1	1	-	1	1	1	1	1	1	1
Maximum operating temperature	70 °C	85 °C	-	85 °C	85 °C	70 °C	70 °C	70 °C	70 °C	70 °C
Minimum operating temperature	-40 °C	-40 °C	-	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
Optoelectronic device types	PIN PHOTODIODE	PIN PHOTODIODE	-	PIN PHOTODIODE	PIN PHOTODIODE	PIN PHOTODIODE	PIN PHOTODIODE	PIN PHOTODIODE	PIN PHOTODIODE	PIN PHOTODIODE
peak wavelength	1950 nm	1950 nm	-	1950 nm	1950 nm	1950 nm	1950 nm	1950 nm	1950 nm	1950 nm
Minimum reverse breakdown voltage	2 V	2 V	-	2 V	2 V	2 V	2 V	2 V	2 V	2 V
shape	ROUND	ROUND	-	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
size	0.3 mm	0.5 mm	-	0.3 mm	3 mm	1 mm	3 mm	3 mm	0.3 mm	1 mm
Base Number Matches	1	-	-	-	1	1	1	1	-	1

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