TC74HC365,366AP/AF
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC74HC365AP,TC74HC365AF,TC74HC366AP,TC74HC366AF
Hex Bus Buffer
TC74HC365AP/AF
TC74HC366AP/AF
Non-Inverted (3-state)
Inverted (3-state)
TC74HC365AP, TC74HC366AP
The TC74HC365A and TC74HC366A are high speed CMOS
3-STATE BUFFERs fabricated with silicon gate C
2
MOS
technology.
They achieve the high speed operation similar to equivalent
LSTTL while maintaining the CMOS low power dissipation.
The TC74HC366A is an inverting type, while the TC74HC365A
is non-inverting.
All six buffers are controlled by the combination of two enable
inputs (
G1
and
G2
); the outputs of these buffers are enabled only
when both
G1
and
G2
inputs held low, and at the other
combinations, these outputs are disabled to the high impedance
state.
All inputs are equipped with protection circuits against static
discharge or transient excess voltage.
TC74HC365AF, TC74HC366AF
Features
•
•
•
•
•
•
•
•
High speed: t
pd
=
9 ns (typ.) at V
CC
=
5 V
Low power dissipation: I
CC
=
4
μA
(max) at Ta
=
25°C
High noise immunity: V
NIH
=
V
NIL
=
28% V
CC
(min)
Output drive capability: 15 LSTTL loads
Symmetrical output impedance: |I
OH
|
=
I
OL
=
6 mA (min)
∼
Balanced propagation delays: t
pLH
−
t
pHL
Wide operating voltage range: V
CC
(opr)
=
2 to 6 V
Pin and function compatible with 74LS365/366
Weight
DIP16-P-300-2.54A
SOP16-P-300-1.27A
: 1.00 g (typ.)
: 0.18 g (typ.)
Pin Assignment
TC74HC365A
TC74HC366A
1
2007-10-01
TC74HC365,366AP/AF
IEC Logic Symbol
TC74HC365A
TC74HC366A
Truth Table
Inputs
Outputs
An
Yn (365A)
G1
L
L
H
X
G2
L
L
X
H
Yn (366A)
H
L
Z
Z
L
H
X
X
L
H
Z
Z
X: Don’t care
Z: High impedance
Absolute Maximum Ratings (Note 1)
Characteristics
Supply voltage range
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
Rating
−
0.5 to 7
−
0.5 to V
CC
+
0.5
−
0.5 to V
CC
+
0.5
±
20
±
20
±
35
±
75
Unit
V
V
V
mA
mA
mA
mA
mW
°C
500 (DIP) (Note 2)/180 (SOP)
−
65 to 150
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta
= −40
to 65°C. From Ta
=
65 to 85°C a derating factor of
−10
mW/°C shall be
applied until 300 mW.
2
2007-10-01
TC74HC365,366AP/AF
Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Symbol
V
CC
V
IN
V
OUT
T
opr
Rating
2 to 6
0 to V
CC
0 to V
CC
−
40 to 85
Unit
V
V
V
°C
0 to 1000 (V
CC
=
2.0 V)
Input rise and fall time
t
r
, t
f
0 to 500 (V
CC
=
4.5 V)
0 to 400 (V
CC
=
6.0 V)
ns
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
Electrical Characteristics
DC Characteristics
Test Condition
Characteristics
Symbol
V
CC
(V)
2.0
High-level input
voltage
V
IH
⎯
Ta
=
25°C
Min
1.50
3.15
4.20
⎯
⎯
⎯
Ta
=
40 to 85°C
−
Max
⎯
⎯
⎯
Unit
Typ.
⎯
⎯
⎯
⎯
⎯
⎯
Min
1.50
3.15
4.20
⎯
⎯
⎯
Max
⎯
⎯
⎯
4.5
6.0
2.0
V
0.50
1.35
1.80
⎯
⎯
⎯
⎯
⎯
0.50
1.35
1.80
⎯
⎯
⎯
⎯
⎯
Low-level input
voltage
V
IL
⎯
4.5
6.0
2.0
V
1.9
4.4
5.9
4.18
5.68
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2.0
4.5
6.0
4.31
5.80
0.0
0.0
0.0
0.17
0.18
⎯
⎯
⎯
1.9
4.4
5.9
4.13
5.63
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
High-level output
voltage
V
OH
V
IN
=
V
IH
or
V
IL
I
OH
= −
20
μ
A
I
OH
= −
6 mA
I
OH
= −
7.8 mA
I
OL
=
20
μ
A
I
OL
=
6 mA
I
OL
=
7.8 mA
4.5
6.0
4.5
6.0
2.0
V
0.1
0.1
0.1
0.26
0.26
±
0.5
±
0.1
0.1
0.1
0.1
0.33
0.33
±
5.0
±
1.0
μ
A
μ
A
μ
A
Low-level output
voltage
V
OL
V
IN
=
V
IH
or
V
IL
4.5
6.0
4.5
6.0
6.0
6.0
6.0
V
3-state output
off-state current
Input leakage
current
Quiescent supply
current
I
OZ
I
IN
I
CC
V
IN
=
V
IH
or V
IL
V
OUT
=
V
CC
or GND
V
IN
=
V
CC
or GND
V
IN
=
V
CC
or GND
4.0
40.0
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2007-10-01
TC74HC365,366AP/AF
AC Characteristics
(input: t
r
=
t
f
=
6 ns)
Test Condition
Characteristics
Symbol
CL
(pF)
⎯
Ta
=
25°C
V
CC
(V)
2.0
50
4.5
6.0
2.0
50
4.5
6.0
2.0
Min
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Ta
=
−
40 to 85°C
Max
60
12
10
90
18
15
130
26
22
130
26
22
170
34
29
130
26
22
10
⎯
⎯
Unit
Typ.
20
6
5
38
12
10
51
17
14
56
17
13
69
22
17
42
18
15
5
10
25
Min
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
75
15
13
115
23
20
165
33
28
165
33
28
215
44
37
165
33
28
10
⎯
⎯
Output transition time
t
TLH
t
THL
ns
Propagation delay
time
t
pLH
t
pHL
⎯
ns
150
4.5
6.0
2.0
50
Output enable time
t
pZL
t
pZH
R
L
=
1 k
Ω
150
4.5
6.0
2.0
4.5
6.0
ns
Output disable time
t
pLZ
t
pHZ
C
IN
C
OUT
C
PD
(Note)
2.0
R
L
=
1 k
Ω
⎯
⎯
⎯
50
4.5
6.0
ns
Input capacitance
Output capacitance
Power dissipation
capacitance
pF
pF
pF
Note:
C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
I
CC
(opr)
=
C
PD
½V
CC
½f
IN
+
I
CC
/6 (per gate)
4
2007-10-01
TC74HC365,366AP/AF
Package Dimensions
Weight: 1.00 g (typ.)
5
2007-10-01
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