Dual Enhancement Mode
MOSFET
HCT802, HCT802TX, HCT802TXV
Features:
6 pad surface mount package
V
DS
= 90V
R
DS
(on) < 5Ω
ID(on) N-Channel = 1.5A | P-Channel = 1.1A
Two devices selected for V
DS
I
D(on)
and R
DS(on)
similarity
Full TX Processing Available
Gold plated contacts
Description:
HCT802 offers an N‐Channel and P‐Channel MOS transistor in a herme c ceramic surface mount package. The devices used
are similar to industry standards 2N6661 N‐Channel device and VP1008 P‐Channel device. These two enhancement mode
MOSFETS are par cularly well matched for V
DS
, I
DS(on)
, R
DS(on)
and G
fs
.
TX and TXV devices are processed to OPTEK’s military screening program pa erned a er MIL‐PRF‐19500.
TX products receive a V
GS
HTRB at 24 V for 48 hrs. at 150° C and a V
DS
HTRB at 48 V for 260 hrs.at 150° C.
Applications:
Drivers: Solid State
Relays, Lamps,
Solenoids, Displays,
Memories, etc.
Motor Control
Power Supply
Circuits
Part
Number
Sensor Type
V
DSS
Min
I
D(ON)
(mA)
Min
G
fs
(ms)
Min
t
(ON)
/ t
(OFF)
(ns)
Max
Package
HCT801
HCT801TX
HCT801TXV
N & P ‐Channel
Enhancement
MOSFET
90
1.5 & ‐1.1 170 & 200
15/17 & 50/50
6‐pin Ceramic
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue A
11/2016 Page 1
Dual Enhancement Mode
MOSFET
HCT802, HCT802TX, HCT802TXV
Absolute Maximum Ra ngs
Drain Source Voltage
Gate‐Source Voltage
Drain Current (Limited by Tj max) N‐Channel
P‐Channel
Opera ng and Storage Temperature
90V
±20 V
2A
1.1A
-55° C to +150° C
Power Dissipa on
TA = 25°C (Both devices equally driven)
TA = 25°C (Both devices equally driven)
(TS = Substrate that the package is soldered to)
0.5 W Total
1.5 W Total
(1)
Electrical Characteris cs
(T
A
= 25° C unless otherwise noted)
SYMBOL
B
VDSS
V
TH
I
GSS
I
DSS
PARAMETER
Drain‐Source Breakdown
Gate Threshold Voltage
Gate‐Body Leakage
Zero Gate Voltage Drain Current
DEVICE
B=BOTH
B
N
P
B
B
B
N
P
B
N
P
N
P
N
P
N
P
MIN
90
(2)
0.75
‐2.0
1.5
‐1.1
170
200
5
70
150
40
60
10
25
MAX
2.5
‐4.5
±100
10
(2)
500
(2)
UNITS
V
V
V
nA
µA
µA
A
A
Ω
mmho
Mmho
pf
pf
pf
pf
pf
pf
TEST CONDITIONS
I
D
= 10 µA
(2)
, V
GS
= 0
V
GS
= V
DS
, I
D
= 1 mA
I
D
= ‐1 mA
V
GS
= ± 20 V, V
DS
= 0
V
DS
= 90 V
(2)
, V
GS
= 0 V
Tj = 150° C
V
DS
= 25 V, V
GS
= 10 V
V
DS
= ‐15 V, V
GS
= ‐10 V
V
GS
= 10 V
(2)
, I
D
= 1 A
(2)
V
DS
= 25V, I
D
= 0.5 A
V
DS
= ‐10 V, I
D
= ‐0.5 A
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
V
DS
= ‐25 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
V
DS
= ‐25 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 25 V, V
GS
= 0 A, f = 1 MHz
V
DS
= ‐25 V, V
GS
= 0 A, f = 1 MHz
I
D(on)
R
DS(on)
G
fs
C
ISS
C
OSS
C
RSS
On‐State Drain Current
Drain‐Source on Resistance
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Note:
1)
This ra ng is provided as an aid to designers. It is dependent upon moun ng material and methods and is not measurable as an outgoing test.
2)
Reverse polarity for P‐Channel device
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue A
11/2016
Page 2
Dual Enhancement Mode
MOSFET
HCT802, HCT802TX, HCT802TXV
Electrical Characteris cs
(T
A
= 25° C unless otherwise noted)
SYMBOL
t
(on)
t
(off)
PARAMETER
DEVICE
B=BOTH
N
P
N
P
MIN
MAX
15
50
17
50
UNITS
ns
ns
ns
ns
TEST CONDITIONS
V
DD
= 25 v, I
D
= 1 A, R
L
= 50 Ω
V
DD
= ‐25 v, I
D
= ‐0.5 A, R
L
= 50 Ω
V
DD
= 25 v, I
D
= 1 A, R
L
= 50 Ω
V
DD
= ‐25 v, I
D
= ‐0.5 A, R
L
= 50 Ω
Turn‐on‐ me
Turn‐off‐ me
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue A
11/2016
Page 3
京公网安备 11010802033920号
EEWORLD
