TL(RE,RME,SE,OE,YE,GE)28C(F)
TOSHIBA InGaAℓP LED
TLRE28C(F),TLRME28C(F),TLSE28C(F),TLOE28C(F),
TLYE28C(F),TLGE28C(F)
Unit: mm
○
Panel Circuit Indicator
•
•
•
•
•
•
•
•
Lead(Pb)-free products (lead: Sn-Ag-Cu)
4.3x5mm
InGaAℓP technology
Colored Transparent lens
Lineup: 6 colors (red,yellow, green)
Excellent low current light output
High intensity light emission
Applications: message boards, dashboard displays
Lineup
Product Name
TLRE28C(F)
TLRME28C(F)
TLSE28C(F)
TLOE28C(F)
TLYE28C(F)
TLGE28C(F)
Color
Red
Red
Red
Orange
Yellow
Green
Material
InGaAℓP
InGaAℓP
InGaAℓP
InGaAℓP
InGaAℓP
InGaAℓP
JEDEC
EIAJ
TOSHIBA
―
―
4-5AQ1
Weight: 0.25 g (Typ.)
Absolute Maximum Ratings
(Ta
=
25°C)
Product Name
TLRE28C(F)
TLRME28C(F)
TLSE28C(F)
TLOE28C(F)
TLYE28C(F)
TLGE28C(F)
Forward Current
I
F
(mA)
50
50
50
50
50
50
Reverse Voltage
V
R
(V)
4
4
4
4
4
4
Power Dissipation
P
D
(mW)
120
120
120
120
120
120
−40~100
−40~120
Operating
Temperature
T
opr
(°C)
Storage
Temperature
T
stg
(°C)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-10-01
TL(RE,RME,SE,OE,YE,GE)28C(F)
Electrical and Optical Characteristics
(Ta
=
25°C)
Product Name
λ
d
TLRE28C(F)
TLRME28C(F)
TLSE28C(F)
TLOE28C(F)
TLYE28C(F)
TLGE28C(F)
Unit
630
626
613
605
587
571
Typ. Emission Wavelength
λ
P
(644)
(636)
(623)
(612)
(590)
(574)
nm
Δλ
20
23
20
20
17
17
I
F
20
20
20
20
20
20
mA
Luminous Intensity
I
V
Min
85
85
85
153
153
47.6
mcd
Typ.
200
200
300
500
350
150
I
F
20
20
20
20
20
20
mA
Forward Voltage
V
F
Typ.
1.9
1.9
1.9
2.0
2.0
2.0
V
Max
2.4
2.4
2.4
2.4
2.4
2.4
I
F
20
20
20
20
20
20
mA
Reverse
Current
I
R
Max
50
50
50
50
50
50
μA
V
R
4
4
4
4
4
4
V
Please be careful of the following:
•
Soldering temperature: 260°C max, soldering time: 3 s max
(soldering portion of lead: below the lead stopper of the device)
•
•
If the lead is formed, the lead should be formed up to below the lead stopper of the device without forming stress
to the resin. Soldering should be performed after lead forming.
This visible LED lamp also emits some IR light.
If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light.
2
2007-10-01
TL(RE,RME,SE,OE,YE,GE)28C(F)
TLRE28C(F)
I
F
– V
F
100
Ta = 25 °C
3000
Ta = 25 °C
I
V
– I
F
I
V
(mcd)
Luminous intensity
(mA)
50
30
1000
Forward current
I
F
10
5
3
100
1
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
10
1
10
100
Forward voltage
V
F
(V)
Forward current
I
F
(mA)
I
V
– Tc
10
1.0
Relative luminous intensity – Wavelength
IF = 20mA
Ta = 25 °C
0.8
I
V
Relative luminous intensity
3
Relative luminous intensity
5
0.6
1
0.5
0.3
0.4
0.2
0.1
−20
0
20
40
60
80
0
580
600
620
640
660
680
700
Case temperature
Tc
(°C)
Wavelength
λ
(nm)
Radiation pattern
I
F
– Ta
(mA)
I
F
Allowable forward current
80
60
40
20
0
0
20
40
60
80
100
120
Ambient temperature
Ta
(°C)
3
2007-10-01
TL(RE,RME,SE,OE,YE,GE)28C(F)
TLRME28C(F)
I
F
– V
F
100
Ta = 25 °C
3000
Ta = 25 °C
I
V
– I
F
I
V
(mcd)
Luminous intensity
(mA)
50
30
1000
Forward current
I
F
10
5
3
100
1
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
10
1
10
100
Forward voltage
V
F
(V)
Forward current
I
F
(mA)
I
V
– Tc
10
1.0
Relative luminous intensity – Wavelength
IF = 20mA
Ta = 25 °C
0.8
I
V
Relative luminous intensity
3
Relative luminous intensity
5
0.6
1
0.5
0.3
0.4
0.2
0.1
−20
0
20
40
60
80
0
580
600
620
640
660
680
700
Case temperature
Tc
(°C)
Wavelength
λ
(nm)
Radiation pattern
I
F
– Ta
(mA)
I
F
Allowable forward current
80
60
40
20
0
0
20
40
60
80
100
120
Ambient temperature
Ta
(°C)
4
2007-10-01
TL(RE,RME,SE,OE,YE,GE)28C(F)
TLSE28C(F)
I
F
– V
F
100
Ta = 25 °C
10000
Ta = 25 °C
I
V
– I
F
I
V
(mcd)
Luminous intensity
(mA)
50
30
Forward current
I
F
1000
10
5
3
100
1
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
10
1
10
100
Forward voltage
V
F
(V)
Forward current
I
F
(mA)
I
V
– Tc
3
1.0
Relative luminous intensity – Wavelength
IF = 20mA
Ta = 25 °C
0.8
I
V
Relative luminous intensity
1
Relative luminous intensity
0.6
0.5
0.3
0.4
0.2
0.1
−20
0
20
40
60
80
0
560
580
600
620
640
660
680
Case temperature
Tc
(°C)
Wavelength
λ
(nm)
Radiation pattern
I
F
– Ta
(mA)
I
F
Allowable forward current
80
60
40
20
0
0
20
40
60
80
100
120
Ambient temperature
Ta
(°C)
5
2007-10-01
京公网安备 11010802033920号
EEWORLD
