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HAT1110R-EL-E

Description
Silicon P Channel Power MOS FET Power Switching
CategoryDiscrete semiconductor    The transistor   
File Size206KB,8 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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HAT1110R-EL-E Overview

Silicon P Channel Power MOS FET Power Switching

HAT1110R-EL-E Parametric

Parameter NameAttribute value
Brand NameRenesas
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
Parts packaging codeSOP
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Manufacturer packaging codePRSP0008DD-D8
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage80 V
Maximum drain current (ID)1 A
Maximum drain-source on-resistance1.38 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
Humidity sensitivity level1
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)6 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
HAT1110R
Silicon P Channel Power MOS FET
Power Switching
REJ03G0416-0200
Rev.2.00
Oct.07.2004
Features
Capable of –4.5 V gate drive
Low drive current
High density mounting
Outline
SOP-8
7 8
D D
5 6
D D
5
7 6
2
G
4
G
8
3
1 2
S1
S3
4
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
MOS1
MOS2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
V
DSS
–80
Gate to source voltage
V
GSS
±20
Drain current
I
D
–1
Note1
Drain peak current
I
D(pulse)
–6
Reverse drain current
I
DR
–1
Note2
Channel dissipation
Pch
1.2
Note3
Channel dissipation
Pch
1.8
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW
10
µs,
duty cycle
1 %
2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10 s
3. 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10 s
Unit
V
V
A
A
A
W
W
°C
°C
Rev.2.00, Oct.07.2004, page 1 of 7

HAT1110R-EL-E Related Products

HAT1110R-EL-E HAT1110R
Description Silicon P Channel Power MOS FET Power Switching Silicon P Channel Power MOS FET Power Switching
Maker Renesas Electronics Corporation Renesas Electronics Corporation
Parts packaging code SOP SOT
package instruction SMALL OUTLINE, R-PDSO-G8 FP-8DA, SOP-8
Contacts 8 8
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 80 V 80 V
Maximum drain current (ID) 1 A 1 A
Maximum drain-source on-resistance 1.38 Ω 1.38 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G8 R-PDSO-G8
Number of components 2 2
Number of terminals 8 8
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type P-CHANNEL P-CHANNEL
Maximum pulsed drain current (IDM) 6 A 6 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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