HAT1110R
Silicon P Channel Power MOS FET
Power Switching
REJ03G0416-0200
Rev.2.00
Oct.07.2004
Features
•
Capable of –4.5 V gate drive
•
Low drive current
•
High density mounting
Outline
SOP-8
7 8
D D
5 6
D D
5
7 6
2
G
4
G
8
3
1 2
S1
S3
4
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
MOS1
MOS2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
V
DSS
–80
Gate to source voltage
V
GSS
±20
Drain current
I
D
–1
Note1
Drain peak current
I
D(pulse)
–6
Reverse drain current
I
DR
–1
Note2
Channel dissipation
Pch
1.2
Note3
Channel dissipation
Pch
1.8
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1 %
2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10 s
3. 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10 s
Unit
V
V
A
A
A
W
W
°C
°C
Rev.2.00, Oct.07.2004, page 1 of 7
HAT1110R
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
–80
±20
—
—
–1.0
—
—
0.4
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.8
1.02
0.8
170
24
16
3.6
0.3
0.7
14
12
25
5.5
–0.86
21
Max
—
—
±10
–1
–2.5
1.05
1.38
—
—
—
—
—
—
—
—
—
—
—
–1.12
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= –10 mA, V
GS
= 0
I
G
= ±100
µA,
V
DS
= 0
V
GS
= ±16 V, V
DS
= 0
V
DS
= –80 V, V
GS
= 0
V
DS
= –10 V, I
D
= –1mA
I
D
= –0.5 A, V
GS
= –10 V
Note4
I
D
= –0.5 A, V
GS
= – 4.5 V
Note4
I
D
= –0.5 A, V
DS
= –10 V
Note4
V
DS
= –10 V
V
GS
= 0
f = 1MHz
V
DD
= -25 V
V
GS
= -10 V
I
D
= -1.0 A
V
GS
= –10 V, I
D
= –0.5 A
V
DD
≈
–30 V
R
L
= 60
Ω
R
g
= 4.7
Ω
IF = –1.0 A, V
GS
= 0
Note4
IF = –1.0 A, V
GS
= 0
diF/ dt = 100 A/µs
Rev.2.00, Oct.07.2007, page 2 of 7
HAT1110R
Main Characteristics
Power vs. Temperature Derating
4.0
Pch (W)
Maximum Safe Operation Area
10
10
10
0
I
D
(A)
Test condition.
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm), (PW
≤
10 s)
µ
s
3.0
1
1
DC
Op
er
PW
m
s
µ
s
=
10
Channel Dissipation
Drain Current
m
2.0
2
Dr
ive
Op
0.1
Operation in
this area is
0.01
limited by R
DS(on)
ati
s(
on
1s
h
(P
ot
)
W
1.0
1D
rive
er
≤
1
Not
0 s
e 5
)
Op
era
t
at
ion
ion
Ta = 25°C
0.001
1 shot Pulse
0
50
100
150
Ta (°C)
200
0.1
1
10
100
Ambient Temperature
Drain to Source Voltage V
DS
(V)
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
–2.5
–10 V
–5 V
–2.0
I
D
(A)
Typical Transfer Characteristics
–2.0
Tc =
−25°C
I
D
(A)
–4 V
25°C
75°C
–1.0
–1.5
–3.5 V
Drain Current
–1.0
V
GS
= –3 V
–0.5
Pulse Test
0
–5
Drain to Source Voltage V
DS
–10
(V)
Drain Current
V
DS
= –10 V
Pulse Test
0
–1.0
–2.0
–3.0 –4.0
Gate to Source Voltage V
GS
–5.0
(V)
–5
Drain to Source Voltage V
DS(on)
(V)
Pulse Test
–4
–3
Static Drain to Source on State Resistance
R
DS(on)
(mΩ)
Drain to Source Saturation Voltage vs
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
10
Pulse Test
V
GS
= –4.5 V
1
–10 V
–2
–1
I
D
= –1 A
–0.5 A
0
–4
–8
–12
Gate to Source Voltage
–16
–20
V
GS
(V)
0
0.1
1
Drain Current
10
I
D
(A)
Rev.2.00, Oct.07.2007, page 3 of 7
HAT1110R
Static Drain to Source on State Resistance
vs. Temperature
3.0
Pulse Test
2.5
–1 A
2.0
I
D
= –0.2 A, –0.5 A
1.5
V
GS
= –4.5 V
1.0
–0.2 A, –0.5 A
0.5
0
–25
–10 V
0
25 50 75 100 125 150
Case Temperature Tc (°C)
–1 A
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Forward Transfer Admittance |yfs| (S)
10
5
2
1
0.5
0.2
0.1
0.05
0.02
Tc = –25°C
25°C
75°C
V
DS
= –10 V
Pulse Test
–1
–3
–10
I
D
(A)
0.01
–0.01 –0.03 –0.1 –0.3
Drain Current
Body-Drain Diode Reverse
Recovery Time
Reverse Recovery Time trr (ns)
100
50
Capacitance C (pF)
200
100
50
20
10
5
2
1
1000
500
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Ciss
20
10
5
2
1
–0.1
di / dt = –100 A /
µs
V
GS
= 0, Ta = 25°C
–0.3
–1
–3
–10
Reverse Drain Current I
DR
(A)
Dynamic Input Characteristics
Coss
Crss
0
–10
–20
–30
–40
–50
Drain to Source Voltage V
DS
(V)
Switching Characteristics
V
DS
(V)
0
V
DD
= –50 V
–25 V
–10 V
0
(V)
I
D
= –1 A –4
100
50
Switching Time t (ns)
td(off)
20
10
5
2
1
–0.1
td(on)
tr
tf
V
GS
= –10 V, V
DS
= –30 V
Rg = 4.7
Ω,
duty
≤
1 %
–1
Drain Current
–10
I
D
(A)
Drain to Source Voltage
–40
V
DS
V
DD
= –50 V
–25 V
–10 V
2
4
Gate Charge
6
8
Qg (nC)
V
GS
–8
–60
–12
–80
–16
–100
0
–20
10
Rev.2.00, Oct.07.2007, page 4 of 7
Gate to Source Voltage
V
GS
–20
HAT1110R
Reverse Drain Current vs.
Source to Drain Voltage
–2.5
Reverse Drain Current I
DR
(A)
Pulse Test
–2.0
–1.5
–1.0
–10 V
–5 V
–0.5
V
GS
= 0V, 5 V
0
–0.4 –0.8 –1.2
Source to Drain Voltage
–1.6
–2.0
V
SD
(V)
Normalized Transient Thermal Impedance
γ
s (t)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
1
D=1
0.5
0.2
0.1
0.1
0.05
0.02
θch
- f(t) =
γs
(t) x
θch
- f
θch
- f = 180°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
e
uls
p
PDM
PW
T
0.01
0.01
h
1s
ot
D=
PW
T
0.001
10
µ
100
µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
Normalized Transient Thermal Impedance
γ
s (t)
10
1
D=1
0.5
0.2
0.1
0.1
0.05
0.02
θch
- f(t) =
γs
(t) x
θch
- f
θch
- f = 230°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
ls
pu
e
PDM
PW
T
0.01
0.01
1s
t
ho
D=
PW
T
0.001
10
µ
100
µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Rev.2.00, Oct.07.2007, page 5 of 7
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