74HCT540D,74HCT541D
CMOS Digital Integrated Circuits Silicon Monolithic
74HCT540D,74HCT541D
1. Functional Description
• Octal Bus Buffer
74HCT540D: INVERTING, 3-STATE OUTPUTS
74HCT541D: NON-INVERTING, 3-STATE OUTPUTS
2. General
The 74HCT540D/74HCT541D are high speed CMOS OCTAL BUS BUFFERs fabricated with silicon gate C
2
MOS
technology.
These devices may be used as a level converter for interfacing TTL or NMOS to High Speed CMOS. The inputs
are compatible with TTL, NMOS and CMOS output voltage levels.
They achive the high speed operation similar to equivalent LSTTL while maintaing the CMOS low power
dissipation.
The 74HCT540D is an inverting type, and the 74HCT541D is a non-inverting type.
When either G1 or G2 are high, the terminal outputs are in the high-impedance state.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
3. Features
(1)
(2)
(3)
(4)
(5)
High speed: t
pd
= 9 ns (typ.) at V
CC
= 5.5 V
Low power dissipation: I
CC
= 4.0
µA
(max) at T
a
= 25
Compatible with TTL outputs: V
IL
= 0.8 V(max)
V
IH
= 2.0 V(min)
Wide interfacing ability: LSTTL, NMOS, CMOS
Balanced propagation delays: t
PLH
≈
t
PHL
4. Packaging
SOIC20
Start of commercial production
©2016 Toshiba Corporation
1
2016-05
2016-05-24
Rev.2.0
74HCT540D,74HCT541D
5. Pin Assignment
74HCT540D
74HCT541D
6. Marking
74HCT540D
74HCT541D
7. IEC Logic Symbol
74HCT540D
74HCT541D
©2016 Toshiba Corporation
2
2016-05-24
Rev.2.0
74HCT540D,74HCT541D
8. Truth Table
Input G1
H
X
L
L
Input G2
X
H
L
L
Input An
X
X
H
L
Output Yn
Z
Z
H
L
Output Yn
Z
Z
L
H
X:
Z:
Yn:
Yn:
Don't care
High impedance
74HCT541D
74HCT540D
9. Absolute Maximum Ratings (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Input diode current
Output diode current
Output current
V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
Note
Rating
-0.5 to 7.0
-0.5 to V
CC
+ 0.5
-0.5 to V
CC
+ 0.5
±20
±20
±35
±75
500
-65 to 150
Unit
V
V
V
mA
mA
mA
mA
mW
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
10. Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall times
Symbol
V
CC
V
IN
V
OUT
T
opr
t
r
,t
f
Rating
4.5 to 5.5
0 to V
CC
0 to V
CC
-40 to 85
0 to 500
Unit
V
V
V
ns
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either V
CC
or GND.
©2016 Toshiba Corporation
3
2016-05-24
Rev.2.0
74HCT540D,74HCT541D
11. Electrical Characteristics
11.1. DC Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
3-state output OFF-state
leakage current
Input leakage current
Quiescent supply
current
Symbol
V
IH
V
IL
V
OH
V
OL
I
OZ
I
IN
I
CC
I
CCT
Test Condition
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or GND
V
IN
= V
CC
or GND
V
IN
= V
CC
or GND
Per input: V
IN
= 0.5 V or 2.4 V
Other input: V
CC
or GND
I
OH
= -20
µA
I
OH
= -6 mA
I
OL
= 20
µA
I
OL
= 6 mA
V
CC
(V)
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
5.5
5.5
5.5
5.5
Min
2.0
4.4
4.18
Typ.
4.5
4.31
0.0
0.17
Max
0.8
0.1
0.26
±0.5
±0.1
4.0
2.0
µA
µA
µA
mA
V
Unit
V
V
V
11.2. DC Characteristics (Unless otherwise specified, T
a
= -40 to 85
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
3-state output OFF-state
leakage current
Input leakage current
Quiescent supply current
Symbol
V
IH
V
IL
V
OH
V
OL
I
OZ
I
IN
I
CC
I
CCT
Test Condition
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or GND
V
IN
= V
CC
or GND
V
IN
= V
CC
or GND
Per input: V
IN
= 0.5 V or 2.4 V
Other input: V
CC
or GND
I
OH
= -20
µA
I
OH
= -6 mA
I
OL
= 20
µA
I
OL
= 6 mA
V
CC
(V)
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
5.5
5.5
5.5
5.5
Min
2.0
4.4
4.13
Max
0.8
0.1
0.33
±5.0
±1.0
40.0
2.9
µA
µA
µA
mA
V
Unit
V
V
V
©2016 Toshiba Corporation
4
2016-05-24
Rev.2.0
74HCT540D,74HCT541D
11.3. AC Characteristics (Unless otherwise specified, T
a
= 25
, Input: t
r
= t
f
= 6 ns)
Characteristics
Output transition time
Propagation delay time
74HCT540D
Part Number
Symbol
t
TLH
,t
THL
t
PLH
,t
PHL
Note
Test
Condition
C
L
(pF)
50
50
150
Propagation delay time
74HCT541D
t
PLH
,t
PHL
50
150
3-state output enable time
t
PZL
,t
PZH
R
L
= 1 kΩ
50
150
3-state output disable time
Input capacitance
Output capacitance
Power dissipation
capacitance
74HCT540D
74HCT541D
t
PLZ
,t
PHZ
C
IN
C
OUT
C
PD
C
PD
(Note 1)
R
L
= 1 kΩ
50
V
CC
(V)
4.5
5.5
4.5
5.5
4.5
5.5
4.5
5.5
4.5
5.5
4.5
5.5
4.5
5.5
4.5
5.5
Min
Typ.
7
6
12
9
17
14
14
11
19
16
18
16
23
21
18
16
5
10
35
31
Max
12
11
20
18
26
24
23
21
29
27
30
27
36
33
30
27
10
pF
pF
pF
ns
ns
ns
ns
Unit
ns
Note 1: C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current
consumption without load. Average operating current can be obtained by the equation.
I
CC(opr)
= C
PD
×
V
CC
×
f
IN
+ I
CC
/8 (per bit)
11.4. AC Characteristics
(Unless otherwise specified, T
a
= -40 to 85
, Input: t
r
= t
f
= 6 ns)
Characteristics
Output transition time
Propagation delay time
74HCT540D
Part Number
Symbol
t
TLH
,t
THL
t
PLH
,t
PHL
Test
Condition
C
L
(pF)
50
50
150
Propagation delay time
74HCT541D
t
PLH
,t
PHL
50
150
3-state output enable time
t
PZL
,t
PZH
R
L
= 1 kΩ
50
150
3-state output disable time
Input capacitance
t
PLZ
,t
PHZ
C
IN
R
L
= 1 kΩ
50
V
CC
(V)
4.5
5.5
4.5
5.5
4.5
5.5
4.5
5.5
4.5
5.5
4.5
5.5
4.5
5.5
4.5
5.5
Min
Max
15
14
25
23
33
30
29
27
36
33
38
35
45
41
38
35
10
pF
ns
ns
ns
ns
Unit
ns
©2016 Toshiba Corporation
5
2016-05-24
Rev.2.0
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