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DA121TT1G

Description
Diodes - General Purpose, Power, Switching 80V 200mA
CategoryDiscrete semiconductor    diode   
File Size121KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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Diodes - General Purpose, Power, Switching 80V 200mA

DA121TT1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Parts packaging codeSC-75
package instructionR-PDSO-G3
Contacts3
Manufacturer packaging code463-01
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.715 V
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current0.5 A
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.225 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage80 V
Maximum reverse recovery time0.006 µs
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
DA121TT1G
Silicon Switching Diode
Features
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
MAXIMUM RATINGS
(T
A
= 25C)
Rating
Continuous Reverse Voltage
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse Width = 10
ms
Symbol
V
R
I
F
I
FM(surge)
Max
80
200
500
Unit
V
mA
mA
3
CATHODE
1
ANODE
3
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR--4 Board (Note 1)
T
A
= 25C
Derated above 25C
Thermal Resistance,
Junction--to--Ambient (Note 1)
Total Device Dissipation,
FR--4 Board (Note 2)
T
A
= 25C
Derated above 25C
Thermal Resistance,
Junction--to--Ambient (Note 2)
Junction and Storage Temperature
Range
Symbol
P
D
Max
225
1.8
R
θJA
P
D
555
Unit
mW
mW/C
C/W
1
SOT-
-416 / SC-
-75
CASE 463
STYLE 2
MARKING DIAGRAM
360
2.9
mW
mW/C
C/W
C
1
6A M
G
G
R
θJA
T
J
, T
stg
345
--55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR--4 @ Minimum Pad
2. FR--4 @ 1.0
1.0 Inch Pad
6A
= Specific Device Code
M
= Date Code*
G
= Pb--Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or orientation may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
DA121TT1G
Package
SOT--416
(Pb--Free)
Shipping
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2010
October, 2010 - Rev. 3
-
1
Publication Order Number:
DA121TT1/D

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