product has no designed protection against radioactive rays
1/35
TSZ02201-0R2R0G100040-1-2
11.Nov.2016 Rev.006
BR24G64-3A
Absolute Maximum Ratings (Ta=25°C)
Parameter
Supply Voltage
Symbol
V
CC
Rating
-0.3 to +6.5
0.45 (SOP8)
0.45 (SOP-J8)
0.30 (SSOP-B8)
Permissible
Dissipation
0.33 (TSSOP-B8)
Pd
0.31 (TSSOP-B8J)
0.31 (MSOP8)
0.30 (VSON008X2030)
0.80 (DIP-T8)
0.21(VMMP008Z1830)
Storage Temperature
Operating Temperature
Input Voltage /
Output Voltage
Junction
Temperature
Electrostatic discharge
voltage
(human body model)
Tstg
Topr
‐
Tjmax
V
ESD
-65 to +150
-40 to +85
-0.3 to V
CC
+1.0
150
-4000 to +4000
°C
°C
V
°C
V
W
Unit
V
Remark
Datasheet
Derate by 4.5mW/°C when operating above Ta=25°C
Derate by 4.5mW/°C when operating above Ta=25°C
Derate by 3.0mW/°C when operating above Ta=25°C
Derate by 3.3mW/°C when operating above Ta=25°C
Derate by 3.1mW/°C when operating above Ta=25°C
Derate by 3.1mW/°C when operating above Ta=25°C
Derate by 3.0mW/°C when operating above Ta=25°C
Derate by 8.0mW/°C when operating above Ta=25°C
Derate by 2.1mW/°C when operating above Ta=25°C
The Max value of Input Voltage/Output Voltage is not over 6.5V.
When the pulse width is 50ns or less, the Min value of Input
Voltage/Output Voltage is not lower than -1.0V.
Junction temperature at the storage condition
Caution:
Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the
absolute maximum ratings.
Memory Cell Characteristics (Ta=25°C, V
CC
=1.6V to 5.5V)
Parameter
Write Cycles
(Note1)
Data Retention
(Note1)
(Note1) Not 100% TESTED
Min
1,000,000
40
Limit
Typ
-
-
Max
-
-
Unit
Times
Years
Recommended Operating Ratings
Parameter
Power Source Voltage
Input Voltage
Symbol
V
CC
V
IN
Rating
1.6 to 5.5
0 to V
CC
Unit
V
DC Characteristics
(Unless otherwise specified, Ta=-40
°C
to +85
°C
)
Parameter
Input High Voltage 1
Input Low voltage 1
Input High Voltage 2
Input Low voltage 2
Output Low Voltage 1
Output Low Voltage 2
Input Leakage Current
Output Leakage Current
Supply Current (Write)
Supply Current (Read)
Standby Current
Symbol
V
IH1
V
IL1
V
IH2
V
IL2
V
OL1
V
OL2
I
LI
I
LO
I
CC1
I
CC2
I
SB
Limit
Min
0.7V
CC
-0.3
-0.3
(Note1)
Typ
-
-
-
-
-
-
-
-
-
-
-
Max
V
CC
+1.0
+0.3V
CC
V
CC
+1.0
+0.2V
CC
0.4
0.2
+1
+1
2.0
Unit
V
V
V
V
V
V
μA
μA
Conditions
1.7V≤V
CC
≤5.5V
1.7V≤V
CC
≤5.5V
1.6V≤V
CC
<1.7V
1.6V≤V
CC
<1.7V
I
OL
=3.0mA,
2.5V≤V
CC
≤5.5V
(SDA)
I
OL
=0.7mA,
1.6V≤V
CC
<2.5V (SDA)
V
IN
=0 to V
CC
V
OUT
=0 to V
CC
(SDA)
V
CC
=5.5V, f
SCL
=1MHz, t
WR
=5ms,
Byte write, Page write
V
CC
=5.5V, f
SCL
=1MHz
Random read, current read,
sequential read
V
CC
=5.5V, SDA, SCL=V
CC
A0, A1, A2=GND,WP=GND
0.8V
CC
(Note1)
-
-
-1
-1
-
-
-
mA
2.0
2.0
μA
(Note1) When the pulse width is 50ns or less, it is -1.0V.
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Embedded System
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