EEWORLDEEWORLDEEWORLD

Part Number

Search

PD57045-E

Description
RF MOSFET Transistors RF Pwr Transistors LDMOST Plastic N Ch
CategoryDiscrete semiconductor    The transistor   
File Size460KB,20 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric Compare View All

PD57045-E Online Shopping

Suppliers Part Number Price MOQ In stock  
PD57045-E - - View Buy Now

PD57045-E Overview

RF MOSFET Transistors RF Pwr Transistors LDMOST Plastic N Ch

PD57045-E Parametric

Parameter NameAttribute value
Brand NameSTMicroelectronics
MakerSTMicroelectronics
Parts packaging codeSOT
package instructionROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN
Contacts10
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time25 weeks
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage65 V
Maximum drain current (Abs) (ID)5 A
Maximum drain current (ID)5 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G2
JESD-609 codee3
Humidity sensitivity level3
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature165 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)73 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn) - annealed
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
PD57045-E
PD57045S-E
RF POWER transistor, LdmoST plastic family
N-channel enhancement-mode, lateral MOSFETs
Features
Excellent thermal stability
Common source configuration
P
OUT
= 45 W with 13dB gain @ 945 MHz / 28 V
New RF plastic package
PowerSO-10RF
(formed lead)
Description
The device is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28 V in common source mode at frequencies of
up to 1 GHz. The device boasts the excellent
gain, linearity and reliability of ST’s latest
LDMOS technology mounted in the first true SMD
plastic RF power package, PowerSO-10RF.
Device’s superior linearity performance makes it
an ideal solution for base station applications. The
PowerSO-10 plastic package, designed to offer
high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294).
PowerSO-10RF
(straight lead)
Figure 1.
Pin connection
Source
Gate
Drain
Table 1.
Device summary
Order code
PD57045-E
PD57045S-E
PD57045TR-E
PD57045STR-E
Package
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
Packing
Tube
Tube
Tape and reel
Tape and reel
June 2010
Doc ID 12616 Rev 2
1/20
www.st.com
20

PD57045-E Related Products

PD57045-E PD57045TR-E PD57045S-E
Description RF MOSFET Transistors RF Pwr Transistors LDMOST Plastic N Ch RF MOSFET Transistors POWER R.F. RF MOSFET Transistors POWER R.F.
Brand Name STMicroelectronics STMicroelectronics STMicroelectronics
Maker STMicroelectronics STMicroelectronics STMicroelectronics
Parts packaging code SOT SOT SOT
package instruction ROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN ROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN SMALL OUTLINE, R-PDSO-F2
Contacts 10 10 10
Reach Compliance Code not_compliant compliant not_compliant
ECCN code EAR99 EAR99 EAR99
Shell connection SOURCE SOURCE SOURCE
Configuration SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 65 V 65 V 65 V
Maximum drain current (Abs) (ID) 5 A 5 A 5 A
Maximum drain current (ID) 5 A 5 A 5 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G2 R-PDSO-G2 R-PDSO-F2
JESD-609 code e3 e4 e3
Number of components 1 1 1
Number of terminals 2 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 165 °C 165 °C 165 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 73 W 73 W 73 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface Matte Tin (Sn) - annealed NICKEL PALLADIUM GOLD Matte Tin (Sn) - annealed
Terminal form GULL WING GULL WING FLAT
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Factory Lead Time 25 weeks 25 weeks -
Humidity sensitivity level 3 - 3

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 546  694  2413  96  1444  11  14  49  2  30 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号