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IPP041N12N3GXK

Description
MOSFET N-Ch 120V 120A TO220-3 OptiMOS 3
Categorysemiconductor    Discrete semiconductor   
File Size854KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IPP041N12N3GXK Overview

MOSFET N-Ch 120V 120A TO220-3 OptiMOS 3

IPP041N12N3GXK Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage120 V
Id - Continuous Drain Current120 A
Rds On - Drain-Source Resistance3.5 mOhms
Vgs th - Gate-Source Threshold Voltage2 V
Vgs - Gate-Source Voltage20 V
Qg - Gate Charge211 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
ConfigurationSingle
Pd - Power Dissipation300 W
Channel ModeEnhancement
PackagingTube
Height15.65 mm
Length10 mm
Transistor Type1 N-Channel
TypeOptiMOS 3 Power-Transistor
Width4.4 mm
Forward Transconductance - Min83 S
Fall Time21 ns
Rise Time52 ns
Factory Pack Quantity500
Typical Turn-Off Delay Time70 ns
Typical Turn-On Delay Time35 ns
Unit Weight0.211644 oz
IPI041N12N3 G
IPP041N12N3 G
IPB038N12N3 G
OptiMOS
3 Power-Transistor
TM
Product Summary
V
DS
R
DS(on),max (TO-263)
I
D
120
3.8
120
V
mW
A
Features
• N-channel, normal level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant, halogen free
• Qualified according to JEDEC
1)
for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPB038N12N3 G
IPI041N12N3 G
IPP041N12N3 G
Package
Marking
PG-TO263-3
038N12N
PG-TO262-3
041N12N
PG-TO220-3
041N12N
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
2)
T
C
=100 °C
Pulsed drain current
3)
Avalanche energy, single pulse
Gate source voltage
4)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
T
C
=25 °C
I
D
=100 A,
R
GS
=25
W
Value
120
120
480
900
±20
300
-55 ... 175
55/175/56
mJ
V
W
°C
Unit
A
Rev. 2.3
page 1
2014-04-15

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Configuration Single Single SINGLE WITH BUILT-IN DIODE Single
Product Category MOSFET MOSFET - MOSFET
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