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IPB038N12N3GATMA1

Description
MOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3
CategoryDiscrete semiconductor    The transistor   
File Size854KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IPB038N12N3GATMA1 Overview

MOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3

IPB038N12N3GATMA1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time18 weeks
Is SamacsysN
Avalanche Energy Efficiency Rating (Eas)900 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage120 V
Maximum drain current (ID)120 A
Maximum drain-source on-resistance0.0038 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)480 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
IPI041N12N3 G
IPP041N12N3 G
IPB038N12N3 G
OptiMOS
3 Power-Transistor
TM
Product Summary
V
DS
R
DS(on),max (TO-263)
I
D
120
3.8
120
V
mW
A
Features
• N-channel, normal level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant, halogen free
• Qualified according to JEDEC
1)
for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPB038N12N3 G
IPI041N12N3 G
IPP041N12N3 G
Package
Marking
PG-TO263-3
038N12N
PG-TO262-3
041N12N
PG-TO220-3
041N12N
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
2)
T
C
=100 °C
Pulsed drain current
3)
Avalanche energy, single pulse
Gate source voltage
4)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
T
C
=25 °C
I
D
=100 A,
R
GS
=25
W
Value
120
120
480
900
±20
300
-55 ... 175
55/175/56
mJ
V
W
°C
Unit
A
Rev. 2.3
page 1
2014-04-15

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Configuration SINGLE WITH BUILT-IN DIODE Single Single Single
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