IPI041N12N3 G
IPP041N12N3 G
IPB038N12N3 G
OptiMOS
3 Power-Transistor
TM
Product Summary
V
DS
R
DS(on),max (TO-263)
I
D
120
3.8
120
V
mW
A
Features
• N-channel, normal level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant, halogen free
• Qualified according to JEDEC
1)
for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPB038N12N3 G
IPI041N12N3 G
IPP041N12N3 G
Package
Marking
PG-TO263-3
038N12N
PG-TO262-3
041N12N
PG-TO220-3
041N12N
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
2)
T
C
=100 °C
Pulsed drain current
3)
Avalanche energy, single pulse
Gate source voltage
4)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
T
C
=25 °C
I
D
=100 A,
R
GS
=25
W
Value
120
120
480
900
±20
300
-55 ... 175
55/175/56
mJ
V
W
°C
Unit
A
Rev. 2.3
page 1
2014-04-15
IPI041N12N3 G
IPP041N12N3 G
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R
thJC
R
thJA
minimal footprint
6 cm
2
cooling area
5)
-
-
-
-
-
-
0.5
62
40
K/W
IPB038N12N3 G
Unit
max.
Values
typ.
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=270 µA
V
DS
=100 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=100 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=10 V,
I
D
=100 A
V
GS
=10 V,
I
D
=100 A,
TO263
Gate resistance
Transconductance
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=100 A
120
2
-
-
3
0.1
-
4
1
µA
V
-
-
-
-
-
83
10
1
3.5
3.2
1.4
165
100
100
4.1
3.8
-
-
W
S
nA
mW
1)
J-STD20 and JESD22
Current is limited by bondwire; with an
R
thJC
=0.5 K/W the chip is able to carry 182 A.
See figure 3
T
jmax
=150 °C and duty cycle D=0.01 for V
gs
<-5V
2)
3)
4)
5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.3
page 2
2014-04-15
IPI041N12N3 G
IPP041N12N3 G
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
6)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
6)
IPB038N12N3 G
Unit
max.
Values
typ.
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=60 V,
V
GS
=10 V,
I
D
=100 A,
R
G,ext
=1.6
W
V
GS
=0 V,
V
DS
=60 V,
f
=1 MHz
-
-
-
-
-
-
-
10400
1320
61
35
52.0
70
21
13800 pF
1760
-
-
-
-
-
ns
Q
gs
Q
gd
Q
sw
Q
g
V
plateau
Q
oss
V
DD
=60.1 V,
V
GS
=0 V
V
DD
=60.1 V,
I
D
=100 A,
V
GS
=0 to 10 V
-
-
-
-
-
-
52
37
58
158
5.0
182
-
-
-
211
-
243
nC
V
nC
I
S
I
S,pulse
V
SD
t
rr
Q
rr
-
T
C
=25 °C
-
V
GS
=0 V,
I
F
=100 A,
T
j
=25 °C
V
R
=60 V,
I
F
=I
S
,
di
F
/dt =100 A/µs
-
-
-
-
-
0.9
123
356
120
480
1.2
A
V
ns
-
nC
See figure 16 for gate charge parameter definition
Rev. 2.3
page 3
2014-04-15
IPI041N12N3 G
IPP041N12N3 G
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
≥10 V
IPB038N12N3 G
350
140
300
120
250
100
P
tot
[W]
200
80
150
I
D
[A]
60
100
40
50
20
0
0
50
100
150
200
0
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
limited by on-state
resistance
1 µs
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
0
100 µs
10 µs
10 ms
1 ms
0.5
10
2
10
-1
0.2
0.1
0.05
0.02
0.01
Z
thJC
[K/W]
DC
I
D
[A]
10
1
10
-2
single pulse
10
0
10
-1
10
0
10
1
10
2
10
3
10
-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 2.3
page 4
2014-04-15
IPI041N12N3 G
IPP041N12N3 G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
400
7V
10 V
IPB038N12N3 G
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
10
4.5 V
9
6.5 V
6V
320
8
240
R
DS(on)
[mW]
7
5V
I
D
[A]
6
5.5 V
160
5.5 V
5
6V
4
80
5V
10 V
3
4.5 V
0
0
1
2
3
4
5
2
0
50
100
150
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
300
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
200
250
160
200
120
150
g
fs
[S]
80
175 °C
25 °C
I
D
[A]
100
50
40
0
0
2
4
6
8
0
0
50
100
150
V
GS
[V]
I
D
[A]
Rev. 2.3
page 5
2014-04-15
京公网安备 11010802033920号
EEWORLD
