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1N5822UB1

Description
3A, 40V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, LCC-2
CategoryDiscrete semiconductor    diode   
File Size200KB,9 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

1N5822UB1 Overview

3A, 40V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, LCC-2

1N5822UB1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeLCC
package instructionR-XDSO-N2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresFREE WHEELING DIODE
applicationPOWER
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-XDSO-N2
Maximum non-repetitive peak forward current80 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current3 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage40 V
surface mountYES
technologySCHOTTKY
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
1N5822U
Aerospace 40 V power Schottky rectifier
Datasheet
-
production data
Description
A
K
K
This power Schottky rectifier is designed and
packaged to comply with the ESCC5000
specification for aerospace products. It is housed
in a surface mount hermetically sealed LCC2B
package whose footprint is 100% compatible with
industry standard solutions in D5B.
The 1N5822U is suitable for switching mode
power supplies and high frequency DC to DC
converters such as low voltage high frequency
inverter, free wheeling or polarity protection.
A
Leadless chip carrier 2 (LCC2B)
Features
Aerospace applications
Surface mount hermetic package
High thermal conductivity materials
Very small conduction losses
Negligible switching losses
Extremely fast switching
Low forward voltage drop
Package mass: 0.18 g
Target radiation qualification
– 150 krad (Si) low dose rate
– 3 Mrad (Si) high dose rate
ESCC qualified
ESCC
detailed
specification
Table 1. Device summary
(1)
Quality level
Lead
finish
EPPL
I
F(AV)
V
RRM
T
j(max)
VF
(max)
Order code
1N5822UB1
Engineering model Gold
ESCC
ESCC
Gold
Solder dip
yes
3
40
150
0.485
1N5822U01B 5106/020/01
1N5822U02B 5106/020/02
1. Contact ST sales office for information about the specific conditions for products in die form.
November 2013
This is information on a product in full production.
DocID16007 Rev 3
1/9
www.st.com

1N5822UB1 Related Products

1N5822UB1 1N5822U02B
Description 3A, 40V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, LCC-2 3A, 40V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, LCC-2
Is it Rohs certified? conform to conform to
Parts packaging code LCC LCC
package instruction R-XDSO-N2 R-XDSO-N2
Contacts 2 2
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Other features FREE WHEELING DIODE FREE WHEELING DIODE
application POWER POWER
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code R-XDSO-N2 R-XDSO-N2
Maximum non-repetitive peak forward current 80 A 80 A
Number of components 1 1
Phase 1 1
Number of terminals 2 2
Maximum operating temperature 150 °C 150 °C
Maximum output current 3 A 3 A
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 40 V 40 V
surface mount YES YES
technology SCHOTTKY SCHOTTKY
Terminal form NO LEAD NO LEAD
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1
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