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AT29C010-xxx

Description
128K X 8 FLASH 5V PROM, 70 ns, PQCC32
Categorystorage   
File Size215KB,12 Pages
ManufacturerAtmel (Microchip)
Download Datasheet Parametric Compare View All

AT29C010-xxx Overview

128K X 8 FLASH 5V PROM, 70 ns, PQCC32

AT29C010-xxx Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals32
Maximum operating temperature70 Cel
Minimum operating temperature0.0 Cel
Maximum supply/operating voltage5.25 V
Minimum supply/operating voltage4.75 V
Rated supply voltage5 V
maximum access time70 ns
Processing package descriptionPlastic, MS-016AE, LCC-32
stateDISCONTINUED
CraftsmanshipCMOS
packaging shapeRectangle
Package SizeChipCARRIER
surface mountYes
Terminal formJ BEND
Terminal spacing1.27 mm
terminal coatingtin lead
Terminal locationFour
Packaging MaterialsPlastic/Epoxy
Temperature levelCOMMERCIAL
memory width8
organize128K × 8
storage density1.05E6 deg
operating modeASYNCHRONOUS
Number of digits131072 words
Number of digits128K
Memory IC typeFLASH 5V programmable read-only memory
serial parallelparallel
Maximum TWC of write cycle10 ms
AT29C010A
Features
Fast Read Access Time - 70 ns
5-Volt-Only Reprogramming
Sector Program Operation
Single Cycle Reprogram (Erase and Program)
1024 Sectors (128 bytes/sector)
Internal Address and Data Latches for 128-Bytes
Two 8 KB Boot Blocks with Lockout
Internal Program Control and Timer
Hardware and Software Data Protection
Fast Sector Program Cycle Time - 10 ms
DATA Polling for End of Program Detection
Low Power Dissipation
50 mA Active Current
100
µA
CMOS Standby Current
Typical Endurance > 10,000 Cycles
Single 5V
±10%
Supply
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Ranges
1 Megabit
(128K x 8)
5-volt Only
CMOS Flash
Memory
Description
The AT29C010A is a 5-volt-only in-system Flash programmable and erasable read
only memory (PEROM). Its 1 megabit of memory is organized as 131,072 words by 8
bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device
offers access times to 70 ns with power dissipation of just 275 mW over the commer-
cial temperature range. When the device is deselected, the CMOS standby current is
less than 100
µA.
The device endurance is such that any sector can typically be writ-
ten to in excess of 10,000 times.
To allow for simple in-system reprogrammability, the AT29C010A does not require
high input voltages for programming. Five-volt-only commands determine the opera-
AT29C010A
Pin Configurations
Pin Name
A0 - A16
CE
OE
WE
Function
Addresses
Chip Enable
Output Enable
Write Enable
DIP Top View
(continued)
I/O0 - I/O7 Data Inputs/Outputs
NC
No Connect
PLCC Top View
TSOP Top View
Type 1
0394B
4-129

AT29C010-xxx Related Products

AT29C010-xxx 29C010 29C010A AT29C010
Description 128K X 8 FLASH 5V PROM, 70 ns, PQCC32 128K X 8 FLASH 5V PROM, 70 ns, PQCC32 128K X 8 FLASH 5V PROM, 70 ns, PQCC32 128K X 8 FLASH 5V PROM, 70 ns, PQCC32
Number of functions 1 1 1 1
Number of terminals 32 32 32 32
Maximum operating temperature 70 Cel 70 Cel 70 Cel 70 Cel
Minimum operating temperature 0.0 Cel 0.0 Cel 0.0 Cel 0.0 Cel
Maximum supply/operating voltage 5.25 V 5.25 V 5.25 V 5.25 V
Minimum supply/operating voltage 4.75 V 4.75 V 4.75 V 4.75 V
Rated supply voltage 5 V 5 V 5 V 5 V
maximum access time 70 ns 70 ns 70 ns 70 ns
Processing package description Plastic, MS-016AE, LCC-32 Plastic, MS-016AE, LCC-32 Plastic, MS-016AE, LCC-32 Plastic, MS-016AE, LCC-32
state DISCONTINUED DISCONTINUED DISCONTINUED DISCONTINUED
Craftsmanship CMOS CMOS CMOS CMOS
packaging shape Rectangle Rectangle Rectangle Rectangle
Package Size ChipCARRIER ChipCARRIER ChipCARRIER ChipCARRIER
surface mount Yes Yes Yes Yes
Terminal form J BEND J BEND J BEND J BEND
Terminal spacing 1.27 mm 1.27 mm 1.27 mm 1.27 mm
terminal coating tin lead tin lead tin lead tin lead
Terminal location Four Four Four Four
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
memory width 8 8 8 8
organize 128K × 8 128K × 8 128K × 8 128K × 8
storage density 1.05E6 deg 1.05E6 deg 1.05E6 deg 1.05E6 deg
operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Memory IC type FLASH 5V programmable read-only memory FLASH 5V programmable read-only memory FLASH 5V programmable read-only memory FLASH 5V programmable read-only memory
serial parallel parallel parallel parallel parallel
Maximum TWC of write cycle 10 ms 10 ms 10 ms 10 ms
Number of digits 128K 128K 128K 128K
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