AT29C010 datasheet, PDF - EEWORLD Datasheet

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AT29C010: Description128K X 8 FLASH 5V PROM, 70 ns, PQCC32; Categorystorage; File Size215KB，12 Pages; ManufacturerAtmel (Microchip)

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AT29C010 Overview

128K X 8 FLASH 5V PROM, 70 ns, PQCC32

AT29C010 Parametric

Parameter Name	Attribute value
Number of functions	1
Number of terminals	32
Maximum operating temperature	70 Cel
Minimum operating temperature	0.0 Cel
Maximum supply/operating voltage	5.25 V
Minimum supply/operating voltage	4.75 V
Rated supply voltage	5 V
maximum access time	70 ns
Processing package description	Plastic, MS-016AE, LCC-32
state	DISCONTINUED
Craftsmanship	CMOS
packaging shape	Rectangle
Package Size	ChipCARRIER
surface mount	Yes
Terminal form	J BEND
Terminal spacing	1.27 mm
terminal coating	tin lead
Terminal location	Four
Packaging Materials	Plastic/Epoxy
Temperature level	COMMERCIAL
memory width	8
organize	128K × 8
storage density	1.05E6 deg
operating mode	ASYNCHRONOUS
Number of digits	131072 words
Number of digits	128K
Memory IC type	FLASH 5V programmable read-only memory
serial parallel	parallel
Maximum TWC of write cycle	10 ms

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AT29C010A

Features

•

Fast Read Access Time - 70 ns

5-Volt-Only Reprogramming

Sector Program Operation

Single Cycle Reprogram (Erase and Program)

1024 Sectors (128 bytes/sector)

Internal Address and Data Latches for 128-Bytes

Two 8 KB Boot Blocks with Lockout

Internal Program Control and Timer

Hardware and Software Data Protection

Fast Sector Program Cycle Time - 10 ms

DATA Polling for End of Program Detection

Low Power Dissipation

50 mA Active Current

100

µA

CMOS Standby Current

Typical Endurance > 10,000 Cycles

Single 5V

±10%

Supply

CMOS and TTL Compatible Inputs and Outputs

Commercial and Industrial Temperature Ranges

1 Megabit

(128K x 8)

5-volt Only

CMOS Flash

Memory

Description

The AT29C010A is a 5-volt-only in-system Flash programmable and erasable read

only memory (PEROM). Its 1 megabit of memory is organized as 131,072 words by 8

bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device

offers access times to 70 ns with power dissipation of just 275 mW over the commer-

cial temperature range. When the device is deselected, the CMOS standby current is

less than 100

µA.

The device endurance is such that any sector can typically be writ-

ten to in excess of 10,000 times.

To allow for simple in-system reprogrammability, the AT29C010A does not require

high input voltages for programming. Five-volt-only commands determine the opera-

AT29C010A

Pin Configurations

Pin Name

A0 - A16

Function

Addresses

Chip Enable

Output Enable

Write Enable

DIP Top View

(continued)

I/O0 - I/O7 Data Inputs/Outputs

No Connect

PLCC Top View

TSOP Top View

Type 1

0394B

4-129

AT29C010 Related Products

	AT29C010	AT29C010-xxx	29C010	29C010A
Description	128K X 8 FLASH 5V PROM, 70 ns, PQCC32	128K X 8 FLASH 5V PROM, 70 ns, PQCC32	128K X 8 FLASH 5V PROM, 70 ns, PQCC32	128K X 8 FLASH 5V PROM, 70 ns, PQCC32
Number of functions	1	1	1	1
Number of terminals	32	32	32	32
Maximum operating temperature	70 Cel	70 Cel	70 Cel	70 Cel
Minimum operating temperature	0.0 Cel	0.0 Cel	0.0 Cel	0.0 Cel
Maximum supply/operating voltage	5.25 V	5.25 V	5.25 V	5.25 V
Minimum supply/operating voltage	4.75 V	4.75 V	4.75 V	4.75 V
Rated supply voltage	5 V	5 V	5 V	5 V
maximum access time	70 ns	70 ns	70 ns	70 ns
Processing package description	Plastic, MS-016AE, LCC-32	Plastic, MS-016AE, LCC-32	Plastic, MS-016AE, LCC-32	Plastic, MS-016AE, LCC-32
state	DISCONTINUED	DISCONTINUED	DISCONTINUED	DISCONTINUED
Craftsmanship	CMOS	CMOS	CMOS	CMOS
packaging shape	Rectangle	Rectangle	Rectangle	Rectangle
Package Size	ChipCARRIER	ChipCARRIER	ChipCARRIER	ChipCARRIER
surface mount	Yes	Yes	Yes	Yes
Terminal form	J BEND	J BEND	J BEND	J BEND
Terminal spacing	1.27 mm	1.27 mm	1.27 mm	1.27 mm
terminal coating	tin lead	tin lead	tin lead	tin lead
Terminal location	Four	Four	Four	Four
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
memory width	8	8	8	8
organize	128K × 8	128K × 8	128K × 8	128K × 8
storage density	1.05E6 deg	1.05E6 deg	1.05E6 deg	1.05E6 deg
operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Memory IC type	FLASH 5V programmable read-only memory	FLASH 5V programmable read-only memory	FLASH 5V programmable read-only memory	FLASH 5V programmable read-only memory
serial parallel	parallel	parallel	parallel	parallel
Maximum TWC of write cycle	10 ms	10 ms	10 ms	10 ms
Number of digits	128K	128K	128K	128K

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