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1N5818-1

Description
Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-41, HERMETIC SEALED, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size328KB,6 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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1N5818-1 Overview

Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-41, HERMETIC SEALED, GLASS PACKAGE-2

1N5818-1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionO-LALF-W2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.6 V
JEDEC-95 codeDO-41
JESD-30 codeO-LALF-W2
Maximum non-repetitive peak forward current25 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current1 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage30 V
surface mountNO
technologySCHOTTKY
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
1N5818-1, 1N5819-1, 1N6759-1 – 1N6761-1
and DSB1A20 – DSB1A100
Qualified Levels*:
JAN, JANTX, JANTXV
and JANS
Available on
commercial
versions
1 Amp Schottky Barrier Rectifiers
Qualified per MIL-PRF-19500/586
DESCRIPTION
This 1 Amp Schottky barrier rectifier is metallurgically bonded and offers military grade
qualifications for the part numbers of 1N5819-1 and 1N6761-1 for high-reliability applications.
This small diode is hermetically sealed and bonded into a DO-41 glass package.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
JEDEC registered 1N5818, 1N5819 and 1N6759 through 1N6761 numbers.
Hermetically sealed DO-41 glass package.
Metallurgically bonded.
*1N5819-1 and 1N6761-1 only are available in JAN, JANTX, JANTXV and JANS qualifications per
MIL-PRF-19500/586.
(See
part nomenclature
for all available options.)
RoHS compliant versions available (commercial grade only).
DO-41 Package
Also available in:
DO-213AB package
(surface mount)
1N5819UR-1,
1N6761UR-1 and CDLL
variants
APPLICATIONS / BENEFITS
Small size for high density mounting using flexible thru-hole leads (see package illustration).
Low reverse (leakage) currents.
Non-sensitive to ESD per MIL-STD-750 test method 1020 (human body model).
Inherently radiation hard as described in Microsemi “MicroNote
050”.
MAXIMUM RATINGS
@ T
A
= +25 ºC unless otherwise specified
Parameters/Test Conditions
Storage Temperature
Junction Temperature
Symbol
T
STG
T
J
R
ӨJL
R
ӨJA
I
O
I
FSM
Value
-65 to +150
-65 to +125
-65 to +150
70
220
1.0
25
260
Unit
ºC
ºC
ºC/W
ºC/W
A
A
o
C
1N5819-1
1N6761-1
Thermal Resistance, Junction-to-Lead
@ lead length = 0.375 inch (9.52 mm) from body
Thermal Resistance, Junction-to-Ambient
(1)
Average Rectified Output Current
Surge Peak Forward Current
Solder Temperature @ 10 s
NOTE:
1. T
L
= 45ºC for the 1N5819-1 and T
L
= 55ºC for the 1N6761-1.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0301, Rev. 1 (6/25/13)
©2013 Microsemi Corporation
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