256K X 1 Bit Dynamic RAM with Page / Nibble Mode
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | SAMSUNG |
| package instruction | QCCJ, LDCC18,.33X.53 |
| Reach Compliance Code | unknow |
| Maximum access time | 150 ns |
| I/O type | SEPARATE |
| JESD-30 code | R-PQCC-J18 |
| JESD-609 code | e0 |
| memory density | 262144 bi |
| Memory IC Type | NIBBLE MODE DRAM |
| memory width | 1 |
| Humidity sensitivity level | 3 |
| Number of terminals | 18 |
| word count | 262144 words |
| character code | 256000 |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 256KX1 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | QCCJ |
| Encapsulate equivalent code | LDCC18,.33X.53 |
| Package shape | RECTANGULAR |
| Package form | CHIP CARRIER |
| Peak Reflow Temperature (Celsius) | 260 |
| power supply | 5 V |
| Certification status | Not Qualified |
| refresh cycle | 256 |
| Maximum slew rate | 0.065 mA |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | YES |
| technology | MOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | J BEND |
| Terminal pitch | 1.27 mm |
| Terminal location | QUAD |
| Maximum time at peak reflow temperature | 40 |