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KM41257AJ-15

Description
256K X 1 Bit Dynamic RAM with Page / Nibble Mode
Categorystorage    storage   
File Size991KB,15 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

KM41257AJ-15 Overview

256K X 1 Bit Dynamic RAM with Page / Nibble Mode

KM41257AJ-15 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSAMSUNG
package instructionQCCJ, LDCC18,.33X.53
Reach Compliance Codeunknow
Maximum access time150 ns
I/O typeSEPARATE
JESD-30 codeR-PQCC-J18
JESD-609 codee0
memory density262144 bi
Memory IC TypeNIBBLE MODE DRAM
memory width1
Humidity sensitivity level3
Number of terminals18
word count262144 words
character code256000
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX1
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeQCCJ
Encapsulate equivalent codeLDCC18,.33X.53
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)260
power supply5 V
Certification statusNot Qualified
refresh cycle256
Maximum slew rate0.065 mA
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperature40

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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