Chengdu Sino Microelectronics System Co.,Ltd.
Data
Sheet
HWD4558
Features
DUAL OPERATIONAL AMPLIFIERS
General Description
The
HWD4558
consists of two high performance opera-
·
Internal frequency compensation
tional amplifiers. The IC features high gain, high input
·
Large DC voltage gain with 100 dB typical
resistance, excellent channel separation, wide range of
·
High input resistance with 5MΩ typical
operating voltage and internal frequency compensa-
·
Low input noise voltage with 10nV/
HZ
tion. It is specifically suitable for applications in differ-
ential-in, differential-out as well as in potential-metric
·
Maximum power supply voltages:
±
18V
amplifiers and where gain and phase matched channels
·
Compatible with NJM 4558
are mandatory. The
HWD4558
contains
±
18Vmaximum
power supply voltage.
Applications
The
HWD558
is available in DIP-8 or SOIC-8 package.
·
·
Audio AC-3 decoded system
Audio amplifier
Pin Configuration
SOIC-8/DIP-8
OUTPUT 1
INPUT 1-
INPUT 1+
1
2
3
4
8
7
6
5
V
CC
OUTPUT 2
INPUT 2-
INPUT 2+
SOIC-8
DIP-8
V
EE
Top View
Figure 1. Package Types of
HWD4558
Figure 2. Pin Configuration of
HWD4558
Functional Block Diagram
3.1 K
Ω
V
CC
- Input
150 Ω
+ Input
25 Ω
Output
25 Ω
10pF
7.1 K
Ω
87pF
7.1
K
Ω
480
Ω
4.2 K
Ω
36 K
Ω
V
EE
Figure 3. Representative Schematic Diagram of
HWD4558
(Each amplifier)
Issue Date:
Jan.
2003
1
Rev.1.0
Chengdu Sino Microelectronics System Co.,Ltd.
Data Sheet
HWD4558
DUAL OPERATIONAL AMPLIFIERS
Ordering Information
Package
SOIC-8
DIP-8
Temperature Range
-40 to 85
o
C
Part Number
HWD4558M
HWD4558P
Marking ID
4558M
HWD4558P
Packing Type
Tube, Reel
Tube
Absolute Maximum Ratings
Parameter
Power Supply Voltage
Differential Input Voltage
Input Voltage
Power Dissipation
Operating Temperature Range
Storage Temperature Range
Symbol
V
CC
V
EE
V
ID
V
IC
P
D
T
OP
T
STG
DIP
SOIC
-40 to 85
-40 to 125
Value
+ 18
- 18
± 30
± 15
500
800
Unit
V
V
V
mW
o
o
C
C
Note: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the
device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those indicated under "Recommended Operation Ratings" is not implied. Exposure to "Absolute Maximum Rat-
ings" for extended periods may affect device reliability.
Recommended Operation Ratings
Parameter
Supply Voltage
Min.
±4
Max.
± 18
Unit
V
Issue Date:
Jan.
2003
2
Rev.1.0
Chengdu Sino Microelectronics System Co.,Ltd.
Data Sheet
HWD4558
DUAL OPERATIONAL AMPLIFIERS
Electrical Characteristics
Operating Conditions: V
CC
=
+
15V, V
EE
= - 15V, T
A
= 25
o
C unless otherwise specified.
Parameter
Input Offset Voltage
Input Bias Current
Input Offset Current
Input Resistance
Supply Current
Large Signal Voltage Gain
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Source
Output Current
Output Voltage Swing
Slew Rate
Equivalent Input Noise Voltage
Gain Bandwidth Product
Rs=50Ω, f=1KHz
Sink
R
L
=
∞,
Over full temperature
V
CM
= 0V
V
CM
= 0V
Conditions
Min.
-
-
-
0.3
Typ.
0.5
25
2.5
5
3.3
100
92
95
50
50
Max.
6
250
100
-
5.7
-
-
-
-
-
-
-
-
-
-
Unit
mV
nA
nA
M
Ω
mA
dB
dB
dB
mA
mA
V
V /
µ
S
range
R
L
≥2Κ,
V
O
= 1V to 11V
V
CM
= 0V to V
CC
- 15V
V
CC
=5V to 18V
V
EE
=
−
5V to - 18V
V+ = 1V, V- = 0V
V+ = 0V, V- = 1V
R
L
≥
2KΩ
R
L
≥
10KΩ
-
85
80
80
-
-
±
10
±
12
-
-
-
±
13
±
14
1.3
10
nV/(HZ)
0.5
MHz
3.4
Issue Date:
Jan.
2003
3
Rev.1.0
Chengdu Sino Microelectronics System Co.,Ltd.
Data Sheet
HWD4558
DUAL OPERATIONAL AMPLIFIERS
Typical Characteristics
120
30
Open Loop Voltage Gain (dB)
100
V
CC
=15V, V
EE
=-15V
Output Voltage Swing (V)
R
L
=2K,T
A
=25 C
80
o
25
20
V
CC
=15V,V
EE
=-15V,
R
L
=2K, T
A
=25 C
o
60
15
40
10
20
5
0
0
1
2x10 HZ 10 HZ
10 HZ
2
10 HZ
3
10 HZ
4
10 HZ
5
10 HZ
6
0
10 HZ
1
10 HZ
2
10 HZ
3
10 HZ
4
10 HZ
5
10 HZ
6
Frequency (HZ)
Frequency (HZ)
Figure 4. Open Loop Voltage Gain vs. Frequency
Figure 5. Maximum Output Voltage Swing vs. Frequency
30
28
10
3
V
CC
=15V,V
EE
=-15V,T
A
=25 C
o
Equivllent Input Noise Voltage (nV/(HZ) )
0.5
Output Voltage Swing (V)
26
24
22
20
18
16
14
12
0.1K
1K
10K
V
CC
=15V, V
EE
=-15V
10
2
R
S
=50
Ω
,T
A
=25 C
o
10
1
10
0
10 HZ
0
10 HZ
1
10 HZ
2
10 HZ
3
Load Resistance (k
Ω
)
Frequency (HZ)
Figure 6. Maximum Output Voltage Swing
vs. Load Resistance
Figure 7. Equivalent Input Noise Voltage vs. Frequency
Issue Date:
Jan.
2003
4
Rev.1.0
Chengdu Sino Microelectronics System Co.,Ltd.
Data Sheet
HWD4558
DUAL OPERATIONAL AMPLIFIERS
Typical Characteristics (Continued)
80
1.2
1.1
1.0
70
Offset Voltage (mV)
V
CC
=15V
V
EE
=-15V
Bias Current (nA)
60
50
40
30
20
10
0
V
CC
=15V
V
EE
=-15V
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
-25
0
25
50
o
75
100
125
-25
0
25
50
75
o
100
125
Ambient Temperature ( C)
Ambient Temperature ( C)
Figure 8. Input Offset Voltage vs. Temperature
Figure 9. Input Bias Current vs. Temperature
Typical Application
R5 20K
R2 20K
R1 20K
ＨＷＤ4558
D2
1S1588
R3 10K
D1
1S1588
C1 10
µF
R4 20K
V
IN
ＨＷＤ4558
V
O
=V
IN
R6 15K
R7 6.2K
Figure 10. Typical Application of
HWD4558
Issue Date:
Jan.
2003
5
Rev.1.0
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