STPS15L30CDJF
Low drop power Schottky rectifier
Features
■
■
■
■
■
■
Very small conduction losses
Negligible switching losses
Extremely fast switching
Low forward voltage drop
Low thermal resistance
High avalanche capability specified
K
A1
K
A2
K
Description
Dual center tap Schottky rectifier suited for switch
mode power supply and high frequency DC to DC
converters.
Packaged in PowerFLAT™, this device is
intended for use in low voltage, high frequency
inverters, free-wheeling and polarity protection
applications.
A2
A1
PowerFLAT 5x6
STPS15L30CDJF
A2
A1
Table 1.
Device summary
Symbol
I
F(AV)
V
RRM
T
j
(max)
V
F
(typ)
Value
2 x 7.5 A
30 V
150 °C
0.34 V
TM: PowerFLAT is a trademark of STMicroelectronics
May 2011
Doc ID 15664 Rev 4
1/7
www.st.com
7
Characteristics
STPS15L30CDJF
1
Characteristics
Table 2.
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
P
ARM
T
stg
T
j
1.
Absolute ratings (limiting values, per diode)
Parameter
Repetitive peak reverse voltage
Forward rms current
Average forward current
δ
= 0.5
Surge non repetitive forward current
Peak repetitive reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature
(1)
T
c
= 140 °C
Per diode
Per device
Value
30
10
7.5
15
75
1
2800
-65 to + 175
150
Unit
V
A
A
A
A
W
°C
°C
t
p
= 10 ms sinusoidal
t
p
= 2 µs square F= 1 kHz
t
p
= 1 µs T
j
= 25 °C
1
dPtot <
condition to avoid thermal runaway for a diode on its own heatsink
Rth(j-a)
dTj
Table 3.
Symbol
R
th(j-c)
R
th(c)
Thermal resistance
Parameter
Per diode
Junction to case
Total
Coupling
1.6
0.7
°C/W
Value
2.5
Unit
When diodes 1 and 2 are used simultaneously:
Δ
T
j
(diode 1) = P(diode1) x R
th(j-c)
(per diode) + P(diode 2) x R
th(c)
Table 4.
Symbol
I
R(1)
Static electrical characteristics (per diode)
Parameter
Reverse leakage
current
Test conditions
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
V
R
= V
RRM
I
F
= 7.5 A
I
F
= 7.5 A
I
F
= 15 A
I
F
= 15 A
Min.
-
-
-
-
-
-
Typ.
-
70
-
0.34
-
0.44
Max.
1
140
0.48
0.39
V
0.57
0.51
Unit
mA
mA
V
F(1)
Forward voltage drop
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
1. Pulse test: t
p
= 380 µs,
δ
< 2%
To evaluate the conduction losses use the following equation:
P = 0.27 x I
F(AV)
+ 0.016 I
F2(RMS)
2/7
Doc ID 15664 Rev 4
STPS15L30CDJF
Characteristics
Figure 1.
Average forward power dissipation Figure 2.
versus average forward current
(per diode)
9
δ=0.5
δ=1
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
PF(AV)(W)
IF(AV)(A)
8
7
6
5
4
3
T
δ=0.2
δ=0.1
δ=0.05
2
tp
T
IF(AV)(A)
0
1
2
3
4
5
6
7
δ
=tp/T
8
9
1
0
10
δ
=tp/T
0
25
tp
Tamb(°C)
50
75
100
125
150
Figure 3.
Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
P
ARM
(t
p
)
P
ARM
(1µs)
1
1.2
1
0.1
0.8
0.6
0.01
0.4
0.2
0.001
0.01
0.1
1
P
ARM (Tj)
P
ARM
(25°C)
t
p
(µs)
10
100
1000
T
j
(°C)
50
75
100
125
150
0
25
Figure 5.
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
Figure 6.
Relative variation of thermal
impedance, junction to case,
versus pulse duration
120
110
100
90
80
IM(A)
1.0
0.9
0.8
0.7
T
c
=25°C
Zth(j-c)/Rth(j-c)
70
60
50
40
30
20
10
0
1.E-03
I
M
t
0.6
0.5
0.4
T
c
=75°C
T
c
=125°C
0.3
0.2
δ
=0.5
t(s)
1.E-02
1.E-01
1.E+00
0.1
0.0
Single pulse
tp(s)
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E-05
Doc ID 15664 Rev 4
3/7
Characteristics
STPS15L30CDJF
Figure 7.
Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
Figure 8.
Junction capacitance versus
reverse voltage applied
(typical values, per diode)
F=1MHz
V
osc
=30mV
RMS
T
j
=25°C
IR(mA)
1.E+03
T
j
=150°C
C(pF)
1000
1.E+02
T
j
=125°C
1.E+01
T
j
=100°C
T
j
=75°C
1.E+00
T
j
=50°C
1.E-01
T
j
=25°C
1.E-02
0
5
10
VR(V)
15
20
25
30
VR(V)
100
1
10
100
Figure 9.
Forward voltage drop versus
forward current (per diode)
Figure 10. Thermal resistance junction to
ambient versus copper surface
under each lead
Rth(j-a)(°C/W)
300
20
18
16
14
12
10
8
6
4
2
I (A)
FM
T
j
= 25 °C
(Maximum values)
200
Epoxy printed board FR4
copper thickness = 35 µm
T
j
= 125 °C
(Maximum values)
T
j
= 125 °C
(Typical values)
100
0
0.0
V (V)
FM
Scu(mm²)
0
0
200
400
600
800
1000
0.1
0.2
0.3
0.4
0.5
0.6
4/7
Doc ID 15664 Rev 4
STPS15L30CDJF
Package information
2
Package information
●
●
Epoxy meets UL94,V0
Lead-free package
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at:
www.st.com.
ECOPACK
®
is an ST trademark.
Table 5.
PowerFLAT 5x6 dimensions
Dimensions
Ref.
D2
E2
K
b
Millimeters
Min.
Typ.
Max.
1.00
0.05
0.25
0.30
5.20
4.11
1.27
6.15
3.50
0.50
1.275
3.70
0.80
1.575
0.138
0.020
0.050
4.31
0.162
0.50
0.012
Min.
0.031
0.001
Inches
Typ.
Max.
0.039
0.002
0.010
0.020
0.205
0.170
0.050
0.242
0.146
0.031
0.062
A
A1
A2
b
0.80
0.02
e
A
A1
D
L
A2
D
D2
e
E
E
E2
L
K
Figure 11. Footprint (dimensions in mm)
5.35
4.41
0.98
0.95
0.62
1.27
Doc ID 15664 Rev 4
3.86
4.33
6.29
5/7
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