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HMN1M8DVN-70

Description
Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 40Pin ?DIP, 3.3V
Categorystorage    storage   
File Size94KB,9 Pages
ManufacturerHANBIT Electronics
Websitehttp://www.hbe.co.kr/
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HMN1M8DVN-70 Overview

Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 40Pin ?DIP, 3.3V

HMN1M8DVN-70 Parametric

Parameter NameAttribute value
MakerHANBIT Electronics
package instruction,
Reach Compliance Codeunknow
HANBit
HMN1M8DVN
Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 40Pin
DIP, 3.3V
Part No.
HMN1M8DVN
GENERAL DESCRIPTION
The HMN1M8DVN Nonvolatile SRAM is a 8,388,608-bit static RAM organized as 1,048,576 bytes by 8 bits.
The HMN1M8DVN has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited
write cycles of standard SRAM and integral control circuitry which constantly monitors the single 3.3V supply for an out-of-
tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the
memory until after V
CC
returns valid and write protection is unconditionally enabled to prevent garbled data. In addition the
SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is
switched on to sustain the memory until after V
CC
returns valid.
The HMN1M8DVN uses extremely low standby current CMOS SRAM’s, coupled with small lithium coin cells to provide
non-volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.
FEATURES
w
Access time : 70, 85, 120, 150 ns
w
High-density design : 8Mbit Design
w
Battery internally isolated until power is applied
w
Industry-standard 40-pin 1,024K x 8 pinout
w
Unlimited write cycles
w
Data retention in the absence of V
CC
w
10-years minimum data retention in absence of power
w
Automatic write-protection during power-up/power-down
cycles
w
Data is automatically protected during power loss
PIN ASSIGNMENT
DU
NC
NC
A
18
A
16
A
14
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
DQ
0
DQ
1
DQ
2
V
SS
DU
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
OPTIONS
w
Timing
70 ns
85 ns
120 ns
150 ns
MARKING
- 70
- 85
-100
-150
DU
V
CC
A
19
NC
A
15
A
17
/WE
A
13
A
8
A
9
A
11
/OE
A
10
/CE
DQ
7
DQ
6
DQ
5
DQ
4
DQ
3
DU
40-pin Encapsulated Package
URL:www.hbe.co.kr
Rev.0.0
(January/ 2003)
1
HANBit Electronics Co.,Ltd

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Description Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 40Pin ?DIP, 3.3V Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 40Pin ?DIP, 3.3V Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 40Pin ?DIP, 3.3V Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 40Pin ?DIP, 3.3V Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 40Pin ?DIP, 3.3V Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 40Pin ?DIP, 3.3V Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 40Pin ?DIP, 3.3V Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 40Pin ?DIP, 3.3V Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 40Pin ?DIP, 3.3V
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