JANTX1N5822 datasheet, PDF - EEWORLD Datasheet

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JANTX1N5822: Description3 A, 40 V, SILICON, RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size34KB，2 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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JANTX1N5822 Overview

3 A, 40 V, SILICON, RECTIFIER DIODE

JANTX1N5822 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	HERMETIC SEALED PACKAGE-2
Contacts	2
Reach Compliance Code	compli
ECCN code	EAR99
Other features	METALLURGICALLY BONDED
application	GENERAL PURPOSE
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	O-XALF-W2
JESD-609 code	e0
Maximum non-repetitive peak forward current	80 A
Number of components	1
Phase	1
Number of terminals	2
Maximum output current	3 A
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Qualified
Guideline	MIL-19500/620E
Maximum repetitive peak reverse voltage	40 V
surface mount	NO
technology	SCHOTTKY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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• 1N5822 AVAILABLE IN

JAN, JANTX, JANTXV AND JANS

PER MIL-PRF-19500/620

• 3 AMP SCHOTTKY BARRIER RECTIFIERS

• HERMETICALLY SEALED

• METALLURGICALLY BONDED

1N5822

and

DSB5820 thru DSB5822

and

DSB3A20 thru DSB3A40

MAXIMUM RATINGS

0.115/0.145

Operating Temperature: -65°C to +125°C

Storage Temperature: -65°C to +150°C

Average Rectified Forward Current: 3.0 AMP @ TL = +55°C, L = 3/8”

Derating: 43 mA / °C above TL = +55°C, L = 3/8”

2.92/3.68

0.130/0.195

3.30/4.95

0.900

22.86

0.036/0.042

0.91/1.07

ELECTRICAL CHARACTERISTICS

@ 25°C, unless otherwise specified.

CDI

TYPE

NUMBER

WORKING PEAK

REVERSE

VOLTAGE

VRWM

VOLTS

MAXIMUM FORWARD VOLTAGE

VF @ 1.0 A

VOLTS

0.40

VF @ 3.0 A

VOLTS

0.50

VF @ 9.4A

VOLTS

0.70

MAXIMUM REVERSE

LEAKAGE CURRENT

AT RATED VOLTAGE

IR @ +25°C

0.10

IR @ +100°C

12.5

FIGURE 1

DESIGN DATA

CASE:

Hermetically sealed, “B” Body

per MIL-PRF-19500/620. D-5B

LEAD MATERIAL:

Copper clad steel

LEAD FINISH:

Tin / Lead

THERMAL RESISTANCE: (R

OJEC): 30

C/W maximum at L = .375 inch

THERMAL IMPEDANCE: (Z

OJX): 3

C/W maximum

POLARITY:

Cathode end is banded.

MOUNTING POSITION:

Any

DSB5820

DSB5821

DSB5822

J,JX,JV & JS

5822

DSB3A20

DSB3A30

DSB3A40

6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841

PHONE (978) 620-2600

FAX (978) 689-0803

WEBSITE: http://www.microsemi.com

JANTX1N5822 Related Products

	JANTX1N5822	DSB3A30	DSB3A40	DSB3A20	DSB5821	DSB5820	DSB5822	IXFP14N85XHV	JANS1N5822
Description	3 A, 40 V, SILICON, RECTIFIER DIODE	3 A, 30 V, SILICON, RECTIFIER DIODE	3 A, 40 V, SILICON, RECTIFIER DIODE	3 A, 20 V, SILICON, RECTIFIER DIODE	3 A, 30 V, SILICON, RECTIFIER DIODE	3 A, 20 V, SILICON, RECTIFIER DIODE	3 A, 40 V, SILICON, RECTIFIER DIODE	isc N-Channel MOSFET Transistor	3 A, SILICON, RECTIFIER DIODE
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	-	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	-	incompatible
package instruction	HERMETIC SEALED PACKAGE-2	HERMETIC SEALED, D5B, 2 PIN	HERMETIC SEALED, D5B, 2 PIN	HERMETIC SEALED, D5B, 2 PIN	O-LALF-W2	HERMETIC SEALED, D5B, 2 PIN	HERMETIC SEALED, D5B, 2 PIN	-	HERMETIC SEALED PACKAGE-2
Contacts	2	2	2	2	2	2	-	-	-
Reach Compliance Code	compli	unknow	compli	unknow	compli	unknow	unknow	-	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	-	-
Other features	METALLURGICALLY BONDED	METALLURGICALLY BONDED	METALLURGICALLY BONDED	METALLURGICALLY BONDED	METALLURGICALLY BONDED	METALLURGICALLY BONDED	METALLURGICALLY BONDED	-	METALLURGICALLY BONDED
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	-	GENERAL PURPOSE
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	-	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	-	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	-	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	-	RECTIFIER DIODE
JESD-30 code	O-XALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	-	O-XALF-W2
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	-	e0
Number of components	1	1	1	1	1	1	1	-	1
Phase	1	1	1	1	1	1	1	-	1
Number of terminals	2	2	2	2	2	2	2	-	2
Maximum output current	3 A	3 A	3 A	3 A	3 A	3 A	3 A	-	3 A
Package body material	UNSPECIFIED	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	-	UNSPECIFIED
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	-	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	-	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED
Certification status	Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	Qualified
Maximum repetitive peak reverse voltage	40 V	30 V	40 V	20 V	30 V	20 V	40 V	-	40 V
surface mount	NO	NO	NO	NO	NO	NO	NO	-	NO
technology	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	-	SCHOTTKY
Terminal surface	Tin/Lead (Sn/Pb)	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	-	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	-	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	-	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED
Maker	-	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi	-	Microsemi

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