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DSB5820

Description
3 A, 20 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size34KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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DSB5820 Overview

3 A, 20 V, SILICON, RECTIFIER DIODE

DSB5820 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
package instructionHERMETIC SEALED, D5B, 2 PIN
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresMETALLURGICALLY BONDED
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-LALF-W2
JESD-609 codee0
Number of components1
Phase1
Number of terminals2
Maximum output current3 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage20 V
surface mountNO
technologySCHOTTKY
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
• 1N5822 AVAILABLE IN
JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/620
• 3 AMP SCHOTTKY BARRIER RECTIFIERS
• HERMETICALLY SEALED
• METALLURGICALLY BONDED
1N5822
and
DSB5820 thru DSB5822
and
DSB3A20 thru DSB3A40
MAXIMUM RATINGS
0.115/0.145
Operating Temperature: -65°C to +125°C
Storage Temperature: -65°C to +150°C
Average Rectified Forward Current: 3.0 AMP @ TL = +55°C, L = 3/8”
Derating: 43 mA / °C above TL = +55°C, L = 3/8”
2.92/3.68
0.130/0.195
3.30/4.95
0.900
22.86
0.036/0.042
0.91/1.07
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified.
CDI
TYPE
NUMBER
WORKING PEAK
REVERSE
VOLTAGE
VRWM
VOLTS
MAXIMUM FORWARD VOLTAGE
VF @ 1.0 A
VOLTS
0.40
0.40
0.40
0.40
0.40
0.40
0.40
VF @ 3.0 A
VOLTS
0.50
0.50
0.50
0.50
0.50
0.50
0.50
VF @ 9.4A
VOLTS
0.70
0.70
0.70
0.70
0.70
0.70
0.70
MAXIMUM REVERSE
LEAKAGE CURRENT
AT RATED VOLTAGE
IR @ +25°C
mA
0.10
0.10
0.10
0.10
0.10
0.10
0.10
IR @ +100°C
mA
12.5
12.5
12.5
12.5
12.5
12.5
12.5
FIGURE 1
DESIGN DATA
CASE:
Hermetically sealed, “B” Body
per MIL-PRF-19500/620. D-5B
LEAD MATERIAL:
Copper clad steel
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (R
OJEC): 30
°
C/W maximum at L = .375 inch
THERMAL IMPEDANCE: (Z
OJX): 3
°
C/W maximum
POLARITY:
Cathode end is banded.
MOUNTING POSITION:
Any
DSB5820
DSB5821
DSB5822
J,JX,JV & JS
5822
DSB3A20
DSB3A30
DSB3A40
20
30
40
40
20
30
40
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
67

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Description 3 A, 20 V, SILICON, RECTIFIER DIODE 3 A, 30 V, SILICON, RECTIFIER DIODE 3 A, 40 V, SILICON, RECTIFIER DIODE 3 A, 20 V, SILICON, RECTIFIER DIODE 3 A, 30 V, SILICON, RECTIFIER DIODE 3 A, 40 V, SILICON, RECTIFIER DIODE isc N-Channel MOSFET Transistor 3 A, SILICON, RECTIFIER DIODE 3 A, 40 V, SILICON, RECTIFIER DIODE
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead - Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible - incompatible incompatible
Maker Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi - Microsemi -
package instruction HERMETIC SEALED, D5B, 2 PIN HERMETIC SEALED, D5B, 2 PIN HERMETIC SEALED, D5B, 2 PIN HERMETIC SEALED, D5B, 2 PIN O-LALF-W2 HERMETIC SEALED, D5B, 2 PIN - HERMETIC SEALED PACKAGE-2 HERMETIC SEALED PACKAGE-2
Contacts 2 2 2 2 2 - - - 2
Reach Compliance Code unknow unknow compli unknow compli unknow - unknow compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 - - EAR99
Other features METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED - METALLURGICALLY BONDED METALLURGICALLY BONDED
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE - GENERAL PURPOSE GENERAL PURPOSE
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED - ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE - SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON - SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 - O-XALF-W2 O-XALF-W2
JESD-609 code e0 e0 e0 e0 e0 e0 - e0 e0
Number of components 1 1 1 1 1 1 - 1 1
Phase 1 1 1 1 1 1 - 1 1
Number of terminals 2 2 2 2 2 2 - 2 2
Maximum output current 3 A 3 A 3 A 3 A 3 A 3 A - 3 A 3 A
Package body material GLASS GLASS GLASS GLASS GLASS GLASS - UNSPECIFIED UNSPECIFIED
Package shape ROUND ROUND ROUND ROUND ROUND ROUND - ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM - LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified - Qualified Qualified
Maximum repetitive peak reverse voltage 20 V 30 V 40 V 20 V 30 V 40 V - 40 V 40 V
surface mount NO NO NO NO NO NO - NO NO
technology SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY - SCHOTTKY SCHOTTKY
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE - WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL - AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
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