BLF278
VHF push-pull power MOS transistor
Rev. 5 — 1 September 2015
Product data sheet
IMPORTANT NOTICE
Dear customer,
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Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
FEATURES
•
High power gain
•
Easy power control
•
Good thermal stability
•
Gold metallization ensures excellent reliability.
APPLICATIONS
•
Broadcast transmitters in the VHF frequency range.
DESCRIPTION
Dual push-pull silicon N-channel enhancement mode
vertical D-MOS transistor encapsulated in a 4-lead,
SOT262A1 balanced flange package with two ceramic
caps. The mounting flange provides the common source
connection for the transistors.
5
1
2
BLF278
PINNING - SOT262A1
PIN
1
2
3
4
5
drain 1
drain 2
gate 1
gate 2
source
DESCRIPTION
d
g
s
g
5
3
Top view
d
MAM098
CAUTION
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A, and
SNW-FQ-302B.
4
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°C
in a push-pull common source test circuit.
MODE OF OPERATION
CW, class-B
CW, class-C
CW, class-AB
f
(MHz)
108
108
225
V
DS
(V)
50
50
50
P
L
(W)
300
300
250
G
p
(dB)
>20
typ. 18
>14
typ. 16
η
D
(%)
>60
typ. 80
>50
typ. 55
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
2003 Sep 19
2
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
Per transistor section
V
DS
V
GS
I
D
P
tot
T
stg
T
j
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
T
mb
≤
25
°C;
total device; both
sections equally loaded
−
−
−
−
−65
−
125
±20
18
500
150
200
PARAMETER
CONDITIONS
MIN.
BLF278
MAX.
UNIT
V
V
A
W
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
R
th mb-h
PARAMETER
CONDITIONS
VALUE
max. 0.35
max. 0.15
UNIT
K/W
K/W
thermal resistance from junction total device; both sections
to mounting base
equally loaded.
thermal resistance from
mounting base to heatsink
total device; both sections
equally loaded.
MRA988
handbook, halfpage
100
handbook, halfpage
500
MGE616
ID
(A)
Ptot
(W)
400
(2)
(1)
(1)
(2)
300
10
200
100
1
1
10
100
VDS (V)
500
0
0
40
80
120
Th (°C)
160
Total device; both sections equally loaded.
(1) Current is this area may be limited by R
DSon
.
(2) T
mb
= 25
°C.
Total device; both sections equally loaded.
(1) Continuous operation.
(2) Short-time operation during mismatch.
Fig.2 DC SOAR.
Fig.3 Power derating curves.
2003 Sep 19
3
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
Per transistor section
V
(BR)DSS
I
DSS
I
GSS
V
GSth
∆V
GS
g
fs
g
fs1
/g
fs2
R
DSon
I
DSX
C
is
C
os
C
rs
C
d-f
drain-source breakdown voltage V
GS
= 0; I
D
= 100 mA
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
gate-source voltage difference
of both sections
forward transconductance
forward transconductance ratio
of both sections
drain cut-off current
input capacitance
output capacitance
feedback capacitance
drain-flange capacitance
V
GS
= 0; V
DS
= 50 V
V
GS
=
±20
V; V
DS
= 0
V
DS
= 10 V; I
D
= 50 mA
V
DS
= 10 V; I
D
= 50 mA
V
DS
= 10 V; I
D
= 5 A
V
DS
= 10 V; I
D
= 5 A
125
−
−
2
−
4.5
0.9
−
−
−
−
−
−
−
−
−
−
−
6.2
−
0.2
25
480
190
14
5.4
−
PARAMETER
CONDITIONS
MIN.
TYP.
BLF278
MAX.
UNIT
V
mA
µA
V
mV
S
2.5
1
4.5
100
−
1.1
0.3
−
−
−
−
−
drain-source on-state resistance V
GS
= 10 V; I
D
= 5 A
V
GS
= 10 V; V
DS
= 10 V
V
GS
= 0; V
DS
= 50 V; f = 1 MHz
V
GS
= 0; V
DS
= 50 V; f = 1 MHz
V
GS
= 0; V
DS
= 50 V; f = 1 MHz
Ω
A
pF
pF
pF
pF
V
GS
group indicator
LIMITS
(V)
MIN.
A
B
C
D
E
F
G
H
J
K
L
M
N
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
MAX.
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
O
P
Q
R
S
T
U
V
W
X
Y
Z
LIMITS
(V)
MIN.
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
MAX.
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
GROUP
GROUP
2003 Sep 19
4
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
handbook, halfpage
0
MGE623
handbook, halfpage
30
MGE622
T.C.
(mV/K)
−1
ID
(A)
20
−2
−3
10
−4
−5
10
−2
10
−1
0
1
ID (A)
10
0
5
10
VGS (V)
15
V
DS
= 10 V.
V
DS
= 10 V; T
j
= 25
°C.
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values per section.
Fig.5
Drain current as a function of gate-source
voltage; typical values per section.
handbook, halfpage
400
MGE621
handbook, halfpage
1200
MGE615
RDSon
(mΩ)
300
C
(pF)
800
200
Cis
400
100
Cos
0
0
50
100
Tj (°C)
V
GS
= 10 V; I
D
= 5 A.
150
0
0
20
40
VDS (V)
60
V
GS
= 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a
function of junction temperature; typical
values per section.
Fig.7
Input and output capacitance as functions
of drain-source voltage; typical values per
section.
2003 Sep 19
5
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