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IPN50R650CEATMA1

Description
MOSFET CONSUMER
CategoryDiscrete semiconductor    The transistor   
File Size1MB,13 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IPN50R650CEATMA1 Overview

MOSFET CONSUMER

IPN50R650CEATMA1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time18 weeks
JESD-609 codee3
Terminal surfaceTin (Sn)
Base Number Matches1
IPN50R650CE
MOSFET
500VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
PG-SOT223
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Drain
Pin 2
Gate
Pin 1
Source
Pin 3
Applications
Adapter,ChargerandLighting
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
V
DS
@ T
j,max
R
DS(on),max
I
D
Q
g,typ
I
D,pulse
E
oss
@ 400V
Type/OrderingCode
IPN50R650CE
Value
550
0.65
9
15
19
1.69
Package
PG-SOT223
Unit
V
A
nC
A
µJ
Marking
50S650
RelatedLinks
see Appendix A
Final Data Sheet
1
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