EEWORLDEEWORLDEEWORLD

Part Number

Search

BAS85

Description
Schottky Diodes & Rectifiers Schottky diode 200mW
CategoryDiscrete semiconductor    diode   
File Size184KB,3 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BAS85 Online Shopping

Suppliers Part Number Price MOQ In stock  
BAS85 - - View Buy Now

BAS85 Overview

Schottky Diodes & Rectifiers Schottky diode 200mW

BAS85 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionO-LELF-R2
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-LELF-R2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Maximum output current0.2 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.2 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
Maximum reverse recovery time0.005 µs
surface mountYES
technologySCHOTTKY
Terminal surfaceTin (Sn)
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
BAS85
Taiwan Semiconductor
Small Signal Product
CREAT BY ART
Hermetically Sealed Glass Fast Switching Schottky Barrier Diodes
FEATURES
- Low forward voltage drop
- Ideal for automated placement
- Hermetically sealed glass
- Compression bonded construction
- All external surfaces are corrosion
resistant and leads are readily solderable
- Solder hot dip tin (Sn) lead finish
MINI MELF
MECHANICAL DATA
- Polarity: Indicated by black cathode band
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
SYMBOL
P
D
V
RRM
V
R
I
F(AV)
I
FSM
T
J
T
STG
SYMBOL
I
R
=10μA
V
R
=25V
I
F
=0.1mA
I
F
=1.0mA
I
F
=10mA
I
F
=30mA
I
F
=100mA
Reverse Recovery Time
(Note 1)
t
rr
5
10
V
R
=1V, f=1.0MHz
C
J
Junction Capacitance
Note 1: Reverse recovery test conditions : I
F
=I
R
=10mA, R
L
=100Ω, I
RR
=1mA
V
F
B
V
I
R
MIN
30
2
0.24
0.32
0.40
0.50
0.80
ns
pF
V
VALUE
200
30
30
200
4
125
-65 to +125
TYP
MAX
UNIT
mW
V
V
mA
A
o
o
Power Dissipation
Repetitive Peak Reverse Voltage
Maximum DC Blocking Voltage
Average Forward Rectified Current
Peak Forward Surge Current
Operating Junction Temperature
Storage Temperature Range
PARAMETER
Breakdown Voltage
Reverse Leakage Current
Forward Voltage
C
C
UNIT
V
μA
Document Number: DS_S1412007
Version: C14

BAS85 Related Products

BAS85 BAS85 L1 BAS85 L1G BAS85 L0 BAS85 L0G
Description Schottky Diodes & Rectifiers Schottky diode 200mW Schottky Diodes & Rectifiers Schottky diode 200mW Schottky Diodes & Rectifiers Schottky diode 200mW Schottky Diodes & Rectifiers Schottky diode 200mW Schottky diode and rectifierSchottky diode 200mW
Product Attribute - Attribute Value Attribute Value Attribute Value -
Manufacturer - Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor -
Product Category - Schottky Diodes & Rectifiers Schottky Diodes & Rectifiers Schottky Diodes & Rectifiers Schottky diodes and rectifiers
RoHS - Details Details Details -
Product - Schottky Diodes Schottky Diodes Rectifiers -
Packaging - Reel Reel Reel -
Factory Pack Quantity - 2500 2500 10000 -

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1993  1562  1769  1598  345  41  32  36  33  7 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号