CMPTA06 TR datasheet, PDF - EEWORLD Datasheet

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CMPTA06 TR: DescriptionBipolar Transistors - BJT NPN Med Power; Categorysemiconductor Discrete semiconductor; File Size393KB，3 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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CMPTA06 TR Overview

Bipolar Transistors - BJT NPN Med Power

CMPTA06 TR Parametric

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	Central Semiconductor
Product Category	Bipolar Transistors - BJT
RoHS	Details
Mounting Style	SMD/SMT
Package / Case	SOT-23
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	80 V
Collector- Base Voltage VCBO	80 V
Emitter- Base Voltage VEBO	4 V
Collector-Emitter Saturation Voltage	0.25 V
Maximum DC Collector Current	0.5 A
Gain Bandwidth Product fT	100 MHz
Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 150 C
DC Current Gain hFE Max	50 at 10 mA at 1 V
Height	0.96 mm (Max)
Length	3.05 mm (Max)
Packaging	Cut Tape
Packaging	MouseReel
Packaging	Reel
Width	1.4 mm (Max)
Continuous Collector Current	0.45 A
DC Collector/Base Gain hfe Min	50 at 10 mA at 1 V, 50 at 100 mA at 1 V
Pd - Power Dissipation	350 mW
Factory Pack Quantity	3000
Unit Weight	0.000282 oz

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CMPTA06 NPN

CMPTA56 PNP

SURFACE MOUNT

COMPLEMENTARY

SILICON TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPTA06 and

CMPTA56 are complementary silicon transistors

manufactured by the epitaxial planar process, epoxy

molded in a surface mount package, designed for small

signal general purpose and switching applications.

MARKING CODES: CMPTA06: C1G

CMPTA56: C2G

SOT-23 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Continuous Base Current

Peak Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

IBM

TJ, Tstg

4.0

500

100

200

350

-65 to +175

429

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

ICBO

VCB=80V

ICBO

VCB=80V, TA=150°C

ICEO

BVCEO

BVEBO

VCE(SAT)

VBE(ON)

hFE

VCE=60V

IC=1.0mA

IE=100µA

IC=100mA, IB=10mA

VCE=1.0V, IC=100mA

VCE=1.0V, IC=10mA

VCE=1.0V, IC=100mA

VCE=2.0V, IC=10mA, f=100MHz (CMPTA06)

VCE=1.0V, IC=100mA, f=100MHz(CMPTA56)

MIN

MAX

100

UNITS

µA

4.0

0.25

1.20

100

MHz

R6 (1-February 2010)

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