BC847CDLP
45V DUAL NPN SMALL SIGNAL TRANSISTOR
Features
BV
CEO
> 45V
Low profile 0.4mm high package for thin applications
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: X2-DFN1310-6
Nominal package height: 0.4mm
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - NiPdAu, Solderable per MIL-STD-202,
Method 208
e4
Weight: 0.0015 grams (approximate)
X2-DFN1310-6
C
B
E
E
B
C
Top View
Device Schematic
Top View
Ordering Information
(Note 4)
Part Number
BC847CDLP-7
Notes:
Marking
1M
Reel Size (inches)
7
Tape Width (mm)
8
Quantity per Reel
3000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4.
For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
1M
1M = Product Type Marking Code
(Top View)
BC847CDLP
Document number: DS30817 Rev. 7 - 2
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May 2013
© Diodes Incorporated
BC847CDLP
Maximum Ratings
(@T
A
= +25°C unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
50
45
6
100
Unit
V
V
V
mA
Thermal Characteristics
– Total Device
(@T
A
= +25°C unless otherwise specified.)
Characteristic
Power Dissipation (Note 5) Total Device
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Note:
Symbol
P
D
R
θJA
T
J
, T
STG
Value
350
357
-65 to +150
Unit
mW
°C/W
°C
5. For a device surface mounted on minimum recommended pad layout FR-4 PCB with single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
Thermal Characteristics
– Total Device
350
300
P
D
, POWER DISSIPATION (mW)
250
200
150
100
50
0
R
JA
= 357
°C/W
Note 5
25
75
125
50
100
150
T
A
, AMBIENT TEMPERATURE (°C)
Figure 1 Power Dissipation vs. Ambient Temperature
0
BC847CDLP
Document number: DS30817 Rev. 7 - 2
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BC847CDLP
Electrical Characteristics
(@T
A
= +25°C unless otherwise specified.)
Characteristic (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Collector-Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Note:
Symbol
BV
CBO
BV
CEO
BV
EBO
h
FE
V
CE(sat)
V
BE(sat)
V
BE(on)
I
CES
I
CBO
f
T
C
CBO
Min
50
45
6
420
—
—
580
—
—
—
—
100
—
Typ
—
—
—
650
55
130
700
900
660
—
—
—
—
—
2.0
Max
—
—
—
800
250
600
—
700
770
15
15
5
—
—
Unit
V
V
V
—
mV
mV
mV
nA
nA
µA
MHz
pF
Test Condition
I
C
= 100µA, I
B
= 0
I
C
= 10mA, I
B
= 0
I
E
= 100µA, I
C
= 0
V
CE
= 5.0V, I
C
= 2.0mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
V
CE
= 5.0V, I
C
= 2.0mA
V
CE
= 5.0V, I
C
= 10mA
V
CE
= 50V
V
CB
= 30V
V
CB
= 30V, T
A
= +150°C
V
CE
= 5.0V, I
C
= 10mA,
f = 100MHz
V
CB
= 10V, f = 1.0MHz
6. Measured under pulsed conditions. Pulse width
300µs. Duty cycle
2%.
0.25
I
B
= 10mA
1,400
I
B
= 8mA
V
CE
= 5V
1,200
h
FE
, DC CURRENT GAIN
1,000
800
600
400
T
A
= -55°C
T
A
= 150°C
I
C
, COLLECTOR CURRENT (A)
0.20
I
B
= 6mA
0.15
I
B
= 4mA
T
A
= 85°C
0.10
I
B
= 2mA
T
A
= 25°C
0.05
200
0
0
0.1
1
3
4
2
5
6
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Figure 2 Typical Collector Current vs. Collector-Emitter Voltage
0
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Figure 3 Typical DC Current Gain vs. Collector Current
BC847CDLP
Document number: DS30817 Rev. 7 - 2
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BC847CDLP
V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
0.25
I
C
/I
B
= 10
1.0
0.9
0.8
0.7
0.6
0.5
V
CE
= 5V
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.20
T
A
= -55°C
T
A
= 25°C
0.15
T
A
= 150°C
0.10
T
A
= 85°C
T
A
= 85°C
0.4
0.3
0.2
0.1
0
0.01
T
A
= 150°C
0.05
T
A
= -55°C
T
A
= 25°C
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Figure 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
1.2
I
C
/I
B
= 10
0
0.01
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Figure 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
f = 1MHz
14
T
A
= 25°C
T
A
= -55°C
1.0
12
10
CAPACITANCE (pF)
8
6
4
2
0
C
obo
C
ibo
0.8
0.6
0.4
T
A
= 85°C
0.2
T
A
= 150°C
0
0.01
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Figure 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
V
CE
= 5V
f = 100MHz
0
25
5
10
15
20
V
R
, REVERSE VOLTAGE (V)
Figure 7 Typical Capacitance Characteristics
300
f
T
, GAIN-BANDWIDTH PRODUCT (MHz)
250
200
150
100
50
0
0
20
40
30
50
60
I
C
, COLLECTOR CURRENT (mA)
Figure 8 Typical Gain-Bandwidth Product
vs. Collector Current
10
70
BC847CDLP
Document number: DS30817 Rev. 7 - 2
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May 2013
© Diodes Incorporated
BC847CDLP
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
A1
A3
Z
B
D2
R0
.15
0
E2
d
L
d
D
e
E
f
z
X2-DFN1310-6
Dim Min Max Typ
A
0.40
A1
0
0.05 0.02
A3
0.13
b
0.10 0.20 0.15
D
1.25 1.38 1.30
d
0.25
D2
0.30 0.50 0.40
E
0.95 1.075 1.00
e
0.35
E2
0.30 0.50 0.40
f
0.10
L
0.20 0.30 0.25
Z
0.05
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
G2
X2
Y2
G1
b
Y1
G3
a
X1
Dimensions
G1
G2
G3
X1
X2
Y1
Y2
a
b
Value (in mm)
0.16
0.17
0.15
0.52
0.20
0.52
0.375
0.09
0.06
BC847CDLP
Document number: DS30817 Rev. 7 - 2
5 of 6
www.diodes.com
May 2013
© Diodes Incorporated
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