A Business Partner of Renesas Electronics Corporation.
NESG2031M05
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
Flat-Lead 4-Pin Thin-Type Super Minimold (M05)
FEATURES
•
Data Sheet
R09DS0035EJ0400
Rev. 4.00
Jun 20, 2012
•
•
•
The device is an ideal choice for low noise, high-gain at low current amplifications.
NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz
NF = 1.3 dB TYP., G
a
= 10.0 dB TYP. @ V
CE
= 2 V, I
C
= 5 mA, f = 5.2 GHz
Maximum stable power gain: MSG = 21.5 dB TYP. @ V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
High breakdown voltage technology for SiGe Tr. adopted: V
CEO
(absolute maximum ratings) = 5.0 V
Flat-lead 4-pin thin-type super minimold (M05) package
<R>
ORDERING INFORMATION
Part Number
NESG2031M05
NESG2031M05-T1
Order Number
NESG2031M05-A
NESG2031M05-T1-A
Flat-lead 4-pin thin-
type supper minimold
(M05, 2012 PKG)
(Pb-Free)
Remark
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
T
j
T
stg
Ratings
13.0
5.0
1.5
35
175
150
−65
to +150
Note:
DI
SC
O
Mounted on 1.08 cm
2
×
1.0 mm (t) glass epoxy PCB
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0035EJ0400 Rev. 4.00
Jun 20, 2012
NT
CAUTION
To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
IN
U
Package
Quantity
50 pcs
(Non reel)
3 kpcs/reel
Unit
V
V
V
mA
mW
°C
°C
ED
Supplying Form
• 8 mm wide embossed
taping
• Pin 3 (Collector), Pin 4
(Emitter) face the
perforation side of the tape
Page 1 of 12
A Business Partner of Renesas Electronics Corporation.
NESG2031M05
<R>
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure (1)
Noise Figure (2)
Associated Gain (1)
Associated Gain (2)
Reverse Transfer Capacitance
Maximum Stable Power Gain
Gain 1 dB Compression Output
Power
3rd Order Intermodulation
Distortion Output Intercept
Point
Symbol
I
CBO
I
EBO
Test Conditions
MIN.
−
−
130
20
16.0
−
−
TYP.
−
−
190
25
18.0
0.8
1.3
MAX.
100
100
260
−
−
1.1
−
Unit
nA
nA
−
GHz
dB
dB
dB
h
FE
Note 1
f
T
V
CB
= 5 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 2 V, I
C
= 5 mA
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 2 V, I
C
= 5 mA, f = 5.2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 2 V, I
C
= 5 mA, f = 5.2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CB
= 2 V, I
E
= 0, f = 1 MHz
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
NF
G
a
G
a
C
re
Note 2
MSG
Note 3
P
O (1 dB)
OIP
3
IN
U
−
19.0
−
−
0.15
21.5
13
23
3. MSG =
S
21
S
12
h
FE
CLASSIFICATION
<R>
Rank
Marking
h
FE
Value
FB/YFB
T1H
130 to 260
DI
R09DS0035EJ0400 Rev. 4.00
Jun 20, 2012
SC
O
Page 2 of 12
NT
Notes: 1. Pulse measurement: PW
≤
350 s, Duty Cycle
≤
2%
2. Collector to base capacitance when the emitter grounded
ED
15.0
−
17.0
−
dB
10.0
−
dB
0.25
−
−
−
pF
dB
dBm
dBm
S
21e
NF
2
A Business Partner of Renesas Electronics Corporation.
NESG2031M05
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Mounted on Glass Epoxy PCB
(1.08 cm
2
×
1.0 mm (t) )
Reverse Transfer Capacitance C
re
(pF)
250
Total Power Dissipation P
tot
(mW)
0.3
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
f = 1 MHz
200
175
150
100
50
0.1
Ambient Temperature T
A
(˚C)
100
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 1 V
1
0.1
0.01
0.001
0.5
0.6
Collector Current I
C
(mA)
10
SC
O
0.0001
0.4
0.7
NT
0.1
0.01
0.001
0.8
0.9
1.0
0.0001
0.4
35
Collector Current I
C
(mA)
IN
U
100
10
1
V
CE
= 2 V
0.5
0.6
0.7
30
25
20
15
10
5
0
1
2
3
0
25
50
75
100
125
150
0
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Base to Emitter Voltage V
BE
(V)
100
10
1
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
200
μ
A
180
μ
A
160
μ
A
140
μ
A
120
μ
A
100
μ
A
80
μ
A
60
μ
A
40
μ
A
I
B
= 20
μ
A
4
5
6
V
CE
= 3 V
Collector Current I
C
(mA)
0.1
DI
0.01
0.001
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage V
BE
(V)
Remark
The graph indicates nominal characteristics.
R09DS0035EJ0400 Rev. 4.00
Jun 20, 2012
ED
2
4
6
8
10
Collector to Base Voltage V
CB
(V)
0.8
0.9
1.0
Base to Emitter Voltage V
BE
(V)
Collector to Emitter Voltage V
CE
(V)
0.2
Page 3 of 12
A Business Partner of Renesas Electronics Corporation.
NESG2031M05
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 1 V
1 000
1 000
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 2 V
DC Current Gain h
FE
100
DC Current Gain h
FE
100
10
0.1
1
10
100
10
0.1
Collector Current I
C
(mA)
1 000
V
CE
= 3 V
DC Current Gain h
FE
100
10
0.1
1
Collector Current I
C
(mA)
DI
R09DS0035EJ0400 Rev. 4.00
Jun 20, 2012
SC
O
Remark
The graph indicates nominal characteristics.
NT
10
100
IN
U
Page 4 of 12
DC CURRENT GAIN vs.
COLLECTOR CURRENT
ED
1
10
100
Collector Current I
C
(mA)
A Business Partner of Renesas Electronics Corporation.
NESG2031M05
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Gain Bandwidth Product f
T
(GHz)
35
Gain Bandwidth Product f
T
(GHz)
30
25
20
15
10
5
0
1
V
CE
= 1 V
f = 2 GHz
35
30
25
20
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
V
CE
= 2 V
f = 2 GHz
10
5
0
1
10
Collector Current I
C
(mA)
100
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
35
Gain Bandwidth Product f
T
(GHz)
IN
U
40
35
30
25
20
15
10
5
MSG
|S
21e
|
2
100
0
0.1
1
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
V
CE
= 3 V
f = 2 GHz
30
25
20
15
10
5
0
1
NT
V
CE
= 2 V
I
C
= 20 mA
40
35
30
25
20
15
10
5
MAG
10
100
10
Collector Current I
C
(mA)
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
SC
O
40
35
30
25
20
15
10
5
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
MSG
|S
21e
|
2
DI
0
0.1
1
0
0.1
Frequency f (GHz)
Remark
The graph indicates nominal characteristics.
R09DS0035EJ0400 Rev. 4.00
Jun 20, 2012
ED
10
100
Collector Current I
C
(mA)
15
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
V
CE
= 1 V
I
C
= 20 mA
MAG
10
100
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
V
CE
= 3 V
I
C
= 20 mA
MSG
MAG
|S
21e
|
2
1
10
100
Frequency f (GHz)
Page 5 of 12
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