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NE960R575

Description
MOSFET X KU Band MESFET
Categorysemiconductor    Discrete semiconductor   
File Size2MB,14 Pages
ManufacturerCEL
Websitehttp://www.cel.com/
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NE960R575 Overview

MOSFET X KU Band MESFET

NE960R575 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerCEL
Product CategoryMOSFET
RoHSN
TechnologySi
Mounting StyleSMD/SMT
Package / CaseMinimold-4
Vds - Drain-Source Breakdown Voltage15 V
Id - Continuous Drain Current600 mA
Vgs - Gate-Source Voltage- 7 V
Pd - Power Dissipation3 W
PackagingBulk
A Business Partner of Renesas Electronics Corporation.
NESG2031M05
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
Flat-Lead 4-Pin Thin-Type Super Minimold (M05)
FEATURES
Data Sheet
R09DS0035EJ0400
Rev. 4.00
Jun 20, 2012
The device is an ideal choice for low noise, high-gain at low current amplifications.
NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz
NF = 1.3 dB TYP., G
a
= 10.0 dB TYP. @ V
CE
= 2 V, I
C
= 5 mA, f = 5.2 GHz
Maximum stable power gain: MSG = 21.5 dB TYP. @ V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
High breakdown voltage technology for SiGe Tr. adopted: V
CEO
(absolute maximum ratings) = 5.0 V
Flat-lead 4-pin thin-type super minimold (M05) package
<R>
ORDERING INFORMATION
Part Number
NESG2031M05
NESG2031M05-T1
Order Number
NESG2031M05-A
NESG2031M05-T1-A
Flat-lead 4-pin thin-
type supper minimold
(M05, 2012 PKG)
(Pb-Free)
Remark
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
T
j
T
stg
Ratings
13.0
5.0
1.5
35
175
150
−65
to +150
Note:
DI
SC
O
Mounted on 1.08 cm
2
×
1.0 mm (t) glass epoxy PCB
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0035EJ0400 Rev. 4.00
Jun 20, 2012
NT
CAUTION
To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
IN
U
Package
Quantity
50 pcs
(Non reel)
3 kpcs/reel
Unit
V
V
V
mA
mW
°C
°C
ED
Supplying Form
• 8 mm wide embossed
taping
• Pin 3 (Collector), Pin 4
(Emitter) face the
perforation side of the tape
Page 1 of 12

NE960R575 Related Products

NE960R575 NE94433-T1B-T44-A NE960R275
Description MOSFET X KU Band MESFET RF Bipolar Transistors NPN Silicon Amp Oscillatr Transistor RF JFET Transistors X KU Band MESFET
Product Attribute Attribute Value Attribute Value Attribute Value
Manufacturer CEL CEL CEL
Product Category MOSFET RF Bipolar Transistors RF JFET Transistors
RoHS N Details N
Technology Si Si GaAs
Mounting Style SMD/SMT - Screw
Package / Case Minimold-4 - Outline75
Vds - Drain-Source Breakdown Voltage 15 V - 15 V
Id - Continuous Drain Current 600 mA - 350 mA
Pd - Power Dissipation 3 W - 2.5 W
Transistor Type - Bipolar MESFET
Type - RF Bipolar Small Signal GaAs MESFET
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