RQ3E150MN
Nch 30V 15A Power MOSFET
lOutline
Datasheet
V
DSS
R
DS(on)
at 10V (Max.)
R
DS(on)
at 4.5V (Max.)
30V
6.7mW
8.9mW
2.0W
HSMT8
P
D
lFeatures
1) Low on - resistance.
2) High Power Small Mold Package (HSMT8).
3) Pb-free lead plating ; RoHS compliant
4) Halogen Free
5) 100% Rg and UIS Tested
ec
N
ew om
m
D
es en
ig de
ns d
f
lInner
circuit
(1) Source
(2) Source
(3) Source
(4) Gate
*1
ESD PROTECTION DIODE
*2
BODY DIODE
lPackaging
specifications
Packaging
Reel size (mm)
lApplication
DC/DC converters
Type
Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
lAbsolute
maximum ratings(T
a
= 25°C)
,unless otherwise specified
R
Parameter
Symbol
V
DSS
I
D *1
Value
30
Drain - Source voltage
ot
Continuous drain current
Pulsed drain current
15
60
20
2.0
I
D,pulse
P
D
*2
N
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
V
GSS
*3
T
j
T
stg
150
-55
to
+150
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© 2013 ROHM Co., Ltd. All rights reserved.
1/10
or
(5) Drain
(6) Drain
(7) Drain
(8) Drain
I
D
15A
Taping
330
12
3,000
TB1
RQ3E15
Unit
V
A
A
V
W
°C
°C
2013.02 - Rev.A
RQ3E150MN
lThermal
resistance
Parameter
Symbol
R
thJA *3
R
thJC
Values
Min.
-
-
Typ.
-
-
Data Sheet
Max.
62.5
-
Unit
°C/W
°C/W
Thermal resistance, junction - ambient
lElectrical
characteristics(T
a
= 25°C)
,unless otherwise specified
Parameter
Symbol
Conditions
ec
N
ew om
m
D
es en
ig de
ns d
f
Min.
30
Typ.
-
V
(BR)DSS
V
GS
= 0V, I
D
= 1mA
ΔV
(BR)DSS
I
D
=1mA
ΔT
j
referenced to 25°C
I
DSS
-
-
-
35.1
-
-
-
V
DS
= 30V, V
GS
= 0V
I
GSS
V
GS
=
20V,
V
DS
= 0V
V
DS
= 10V, I
D
= 1mA
I
D
=1mA
referenced to 25°C
V
GS
=10V, I
D
=15A
V
GS (th)
1.2
-
-
-
-
ΔV
(GS)th
ΔT
j
-4.5
4.8
6.4
2.9
-
R
DS(on)
R
G
*4
Values
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Zero gate voltage drain current
Gate - Source leakage current
Gate threshold voltage
Gate threshold voltage
temperature coefficient
Static drain - source
on - state resistance
V
GS
=4.5V, I
D
=15A
Gate input resistannce
Transconductance
f = 1MHz, open drain
V
DS
=10V, I
D
=15A
R
g
fs *4
10.0
N
ot
*1 Limited only by maximum temperature allowed.
*2 Pw
10ms, Duty cycle
1%
*3 Mounted on a ceramic board. (30×30×0.8mm)
*4 Pulsed
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© 2013 ROHM Co., Ltd. All rights reserved.
2/10
or
Max.
-
Unit
V
-
mV/°C
mA
mA
V
mV/°C
1
10
2.5
-
6.7
8.9
-
-
mW
W
S
2013.02 - Rev.A
RQ3E150MN
lElectrical
characteristics(T
a
= 25°C)
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Symbol
C
iss
C
oss
C
rss
t
d(on) *4
t
r *4
Conditions
V
GS
= 0V
V
DS
= 15V
f = 1MHz
V
DD
⋍
15V, V
GS
= 10V
I
D
= 7.5A
Values
Min.
-
-
-
-
-
-
-
Typ.
1100
370
95
11
13
40
8
Data Sheet
Max.
-
-
-
-
-
-
-
Unit
pF
ec
N
ew om
m
D
es en
ig de
ns d
f
t
d(off)
*4
Turn - off delay time
Fall time
R
L
= 2.0W
R
G
= 10W
t
f *4
lGate
Charge characteristics(T
a
= 25C)
Parameter
Symbol
Conditions
Values
Typ.
20
Min.
-
Total gate charge
Q
g *4
V
DD
⋍
15V, I
D
=15A
V
GS
= 10V
Gate - Source charge
Gate - Drain charge
Q
gs *4
V
DD
⋍
15V, I
D
=15A
V
GS
= 4.5V
-
-
-
Q
gd *4
lBody
diode electrical characteristics
(Source-Drain)(T
a
= 25°C)
R
ot
Parameter
Symbol
Conditions
Values
Typ.
-
-
41
40
Min.
-
-
-
-
N
Inverse diode continuous,
forward current
Forward voltage
Reverse recovery time
Reverse recovery charge
I
S
*1
T
a
= 25C
V
GS
= 0V, I
s
= 1.67A
I
S
=15A
di/dt=100A/ms
V
SD *4
t
rr *4
Q
rr *4
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© 2013 ROHM Co., Ltd. All rights reserved.
3/10
or
ns
Max.
-
Unit
10
-
-
-
nC
4.3
3.3
Max.
15
1.2
-
-
Unit
A
V
ns
mC
2013.02 - Rev.A
RQ3E150MN
lElectrical
characteristic curves
Data Sheet
Fig.1 Power Dissipation Derating Curve
120
Fig.2 Maximum Safe Operating Area
100
P
W
= 100ms
Power Dissipation : P
D
/P
D
max. [%]
10
Drain Current : I
D
[A]
80
60
40
20
0
0
ec
N
ew om
m
D
es en
ig de
ns d
f
1
P
W
= 10ms
DC Operation
Operation in this area
is limited by R
DS
(on)
(V
GS
= 10V)
P
W
= 1ms
0.1
50
100
150
200
0.01
T
a
=25ºC
Single Pulse
Mounted on a ceramic board.
(30mm
×
30mm
×
0.8mm)
0.1
1
Junction Temperature : T
j
[°C]
Drain - Source Voltage : V
DS
[V]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Normalized Transient Thermal Resistance : r
(t)
10
T
a
=25ºC
Fig.4 Single Pulse Maximum
Power dissipation
10000
Peak Transient Power : P(W)
1
1000
R
0.1
ot
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
bottom Single
100
0.01
N
0.001
0.0001 0.001 0.01
Rth(ch-a)=62.5ºC/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
Mounted on a ceramic board.
(30mm
×
30mm
×
0.8mm)
10
0.1
1
10
100
1000
1
0.0001 0.001 0.01
0.1
Pulse Width : P
W
[s]
Pulse Width : P
W
[s]
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© 2013 ROHM Co., Ltd. All rights reserved.
4/10
or
10
100
T
a
=25ºC
Single Pulse
1
10
100
1000
100
2013.02 - Rev.A
RQ3E150MN
lElectrical
characteristic curves
Data Sheet
Fig.5 Typical Output Characteristics(I)
14
12
T
a
=25ºC
Pulsed
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 4.0V
Fig.6 Typical Output Characteristics(II)
14
12
V
GS
= 10V
T
a
=25ºC
Pulsed
Drain Current : I
D
[A]
Drain Current : I
D
[A]
10
8
6
4
2
0
10
8
6
4
2
0
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 3.0V
0
ec
N
ew om
m
D
es en
ig de
ns d
f
V
GS
= 3.0V
V
GS
= 2.5V
0.8
0.2
0.4
0.6
1
0
2
4
6
Drain - Source Voltage : V
DS
[V]
Drain - Source Voltage : V
DS
[V]
Fig.7 Breakdown Voltage
vs. Junction Temperature
Drain - Source Breakdown Voltage : V
(BR)DSS
[V]
60
V
GS
= 0V
I
D
= 1mA
Pulsed
40
Fig.8 Typical Transfer Characteristics
100
10
V
DS
= 10V
Pulsed
Drain Current : I
D
[A]
R
1
ot
0.1
20
0.01
N
0
-50
0
50
100
150
0.001
0
0.5
1
1.5
Junction Temperature : T
j
[
°C
]
Gate - Source Voltage : V
GS
[V]
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© 2013 ROHM Co., Ltd. All rights reserved.
5/10
or
V
GS
= 2.5V
8
10
T
a
= 125ºC
T
a
= 75ºC
T
a
= 25ºC
T
a
=
-25ºC
2
2.5
3
3.5
2013.02 - Rev.A
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