MC33178, MC33179
Low Power, Low Noise
Operational Amplifiers
The MC33178/9 series is a family of high quality monolithic
amplifiers employing Bipolar technology with innovative high
performance concepts for quality audio and data signal processing
applications. This device family incorporates the use of high
frequency PNP input transistors to produce amplifiers exhibiting low
input offset voltage, noise and distortion. In addition, the amplifier
provides high output current drive capability while consuming only
420
mA
of drain current per amplifier. The NPN output stage used,
exhibits no deadband crossover distortion, large output voltage swing,
excellent phase and gain margins, low open−loop high frequency
output impedance, symmetrical source and sink AC frequency
performance.
The MC33178/9 family offers both dual and quad amplifier
versions in several package options.
Features
http://onsemi.com
DUAL
PDIP−8
P SUFFIX
CASE 626
1
SOIC−8
D SUFFIX
CASE 751
8
8
1
•
•
•
•
•
•
•
•
•
•
600
W
Output Drive Capability
Large Output Voltage Swing
Low Offset Voltage: 0.15 mV (Mean)
Low T.C. of Input Offset Voltage: 2.0
mV/°C
Low Total Harmonic Distortion: 0.0024%
(@ 1.0 kHz w/600
W
Load)
High Gain Bandwidth: 5.0 MHz
High Slew Rate: 2.0 V/ms
Dual Supply Operation:
±2.0
V to
±18
V
ESD Clamps on the Inputs Increase Ruggedness without Affecting
Device Performance
Pb−Free Packages are Available
8
1
Micro8
DM SUFFIX
CASE 846A
QUAD
PDIP−14
P SUFFIX
CASE 646
1
SOIC−14
D SUFFIX
CASE 751A
14
14
V
CC
1
I
ref
I
ref
V
in
−
V
in
+
C
C
14
1
TSSOP−14
DTB SUFFIX
CASE 948G
ORDERING INFORMATION
V
O
C
M
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
DEVICE MARKING INFORMATION
V
EE
See general marking information in the device marking
section on page 4 of this data sheet.
Figure 1. Representative Schematic Diagram
(Each Amplifier)
©
Semiconductor Components Industries, LLC, 2006
October, 2006
−
Rev. 7
1
Publication Order Number:
MC33178/D
MC33178, MC33179
MAXIMUM RATINGS
Rating
Supply Voltage (V
CC
to V
EE)
Input Differential Voltage Range
Input Voltage Range
Output Short Circuit Duration (Note 2)
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
Operating Temperature Range
Symbol
V
S
V
IDR
V
IR
t
SC
T
J
T
stg
P
D
T
A
Value
+36
Note 1
Note 1
Indefinite
+150
−60
to +150
Note 2
−40
to +85
Unit
V
V
V
sec
°C
°C
mW
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Either or both input voltages should not exceed V
CC
or V
EE
.
2. Power dissipation must be considered to ensure maximum junction temperature (T
J
) is not exceeded. (See power dissipation performance
characteristic, Figure 2.)
ORDERING INFORMATION
Device
MC33178D
MC33178DG
MC33178DR2
MC33178DR2G
MC33178P
MC33178PG
MC33178DMR2
MC33178DMR2G
MC33179D
MC33179DG
MC33179DR2
MC33179DR2G
MC33179P
MC33179PG
MC33179DTBR2G
Package
SOIC−8
SOIC−8
(Pb−Free)
SOIC−8
SOIC−8
(Pb−Free)
PDIP−8
PDIP−8
(Pb−Free)
Micro8
Micro8
(Pb−Free)
SOIC−14
SOIC−14
(Pb−Free)
SOIC−14
SOIC−14
(Pb−Free)
PDIP−14
PDIP−14
(Pb−Free)
TSSOP−14
(Pb−Free)
25 Units / Rail
2500 / Tape & Reel
55 Units / Rail
4000 / Tape & Reel
50 Units / Rail
2500 / Tape & Reel
98 Units / Rail
Shipping
†
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
MC33178, MC33179
MARKING DIAGRAMS
DUAL
PDIP−8
CASE 626
8
MC33178P
AWL
YYWWG
1
1
8
33178
ALYW
G
1
SOIC−8
CASE 751
14
MC33179P
AWLYYWWG
PDIP−14
CASE 646
QUAD
SOIC−14
CASE 751A
14
MC33179DG
AWLYWW
1
Micro8
CASE 846A
8
3178
AYWG
G
1
A
= Assembly Location
WL, L
= Wafer Lot
YY, Y
= Year
WW, W = Work Week
G or
G
= Pb−Free Package
(Note: Microdot may be in either location)
TSSOP−14
CASE 948G
14
MC33
179
ALYWG
G
1
PIN CONNECTIONS
DUAL
CASE 626/751/846A
Output 1
Inputs 1
V
EE
1
2
3
4
8
QUAD
CASE 646/751A/948G
Output 1
Inputs 1
V
CC
Inputs 2
Output 2
1
2
3
4
5
6
7
+
−
2
3
+
−
−
+
−
+
14
13
12
11
10
9
8
−
+
7
V
CC
Output 2
Inputs 2
Output 4
Inputs 4
V
EE
Inputs 3
Output 3
−
+
5
6
1
4
(Top View)
(Top View)
http://onsemi.com
3
MC33178, MC33179
DC ELECTRICAL CHARACTERISTICS
(V
CC
= +15 V, V
EE
=
−15
V, T
A
= 25°C, unless otherwise noted.)
Characteristics
Input Offset Voltage (R
S
= 50
W,
V
CM
= 0 V, V
O
= 0 V)
(V
CC
= +2.5 V, V
EE
=
−2.5
V to V
CC
= +15 V, V
EE
=
−15
V)
T
A
= +25°C
T
A
=
−40°
to +85°C
Average Temperature Coefficient of Input Offset Voltage
(R
S
= 50
W,
V
CM
= 0 V, V
O
= 0 V)
T
A
=
−40°
to +85°C
Input Bias Current (V
CM
= 0 V, V
O
= 0 V)
T
A
= +25°C
T
A
=
−40°
to +85°C
Input Offset Current (V
CM
= 0 V, V
O
= 0 V)
T
A
= +25°C
T
A
=
−40°
to +85°C
Common Mode Input Voltage Range
(DV
IO
= 5.0 mV, V
O
= 0 V)
Large Signal Voltage Gain (V
O
=
−10
V to +10 V, R
L
= 600
W)
T
A
= +25°C
T
A
=
−40°
to +85°C
Output Voltage Swing (V
ID
=
±1.0
V)
(V
CC
= +15 V, V
EE
=
−15
V)
R
L
= 300
W
R
L
= 300
W
R
L
= 600
W
R
L
= 600
W
R
L
= 2.0 kW
R
L
= 2.0 kW
(V
CC
= +2.5 V, V
EE
=
−2.5
V)
R
L
= 600
W
R
L
= 600
W
Common Mode Rejection (V
in
=
±13
V)
Power Supply Rejection
V
CC
/V
EE
= +15 V/
−15
V, +5.0 V/
−15
V, +15 V/
−5.0
V
Output Short Circuit Current (V
ID
=
±1.0
V, Output to Ground)
Source (V
CC
= 2.5 V to 15 V)
Sink (V
EE
=
−2.5
V to
−15
V)
Power Supply Current (V
O
= 0 V)
(V
CC
= 2.5 V, V
EE
=
−2.5
V to V
CC
= +15 V, V
EE
=
−15
V)
MC33178 (Dual)
T
A
= +25°C
T
A
=
−40°
to +85°C
MC33179 (Quad)
T
A
= +25°C
T
A
=
−40°
to +85°C
6
7, 8
Figure
3
Symbol
|V
IO
|
−
−
3
DV
IO
/DT
−
4, 5
I
IB
−
−
−
−
−13
−
50
25
2.0
100
−
5.0
−
−14
+14
200
−
−
nA
500
600
nA
50
60
−
+13
−
−
V
V
O
+
V
O
−
V
O
+
V
O
−
V
O
+
V
O
−
V
O
+
V
O
−
12
13
14, 15
CMR
PSR
80
I
SC
+50
−50
110
+80
−100
−
mA
−
−
mA
−
−
−
−
−
−
1.7
−
1.4
1.6
2.4
2.6
−
−
+12
−
+13
−
1.1
−
80
+12
−12
+13.6
−13
+14
−13.8
1.6
−1.6
110
−
−
−
−12
−
−13
−
−1.1
−
dB
dB
V
kV/V
0.15
−
3.0
4.0
mV/°C
Min
Typ
Max
Unit
mV
|I
IO
|
V
ICR
A
VOL
9, 10, 11
16
I
D
http://onsemi.com
4
MC33178, MC33179
AC ELECTRICAL CHARACTERISTICS
(V
CC
= +15 V, V
EE
=
−15
V, T
A
= 25°C, unless otherwise noted.)
Characteristics
Slew Rate
(V
in
=
−10
V to +10 V, R
L
= 2.0 kW, C
L
= 100 pF, A
V
= +1.0 V)
Gain Bandwidth Product (f = 100 kHz)
AC Voltage Gain (R
L
= 600
W,
V
O
= 0 V, f = 20 kHz)
Unity Gain Bandwidth (Open−Loop) (R
L
= 600
W,
C
L
= 0 pF)
Gain Margin (R
L
= 600
W,
C
L
= 0 pF)
Phase Margin (R
L
= 600
W,
C
L
= 0 pF)
Channel Separation (f = 100 Hz to 20 kHz)
Power Bandwidth (V
O
= 20 V
pp,
R
L
= 600
W,
THD
≤
1.0%)
Total Harmonic Distortion (R
L
= 600
W,,
V
O
= 2.0 V
pp
, A
V
= +1.0 V)
(f = 1.0 kHz)
(f = 10 kHz)
(f = 20 kHz)
Open Loop Output Impedance
(V
O
= 0 V, f = 3.0 MHz, A
V
= 10 V)
Differential Input Resistance (V
CM
= 0 V)
Differential Input Capacitance (V
CM
= 0 V)
Equivalent Input Noise Voltage (R
S
= 100
W,)
f = 10 Hz
f = 1.0 kHz
Equivalent Input Noise Current
f = 10 Hz
f = 1.0 kHz
28
26
21, 23, 24
22, 23, 24
25
Figure
17, 32
18
19, 20
Symbol
SR
1.2
GBW
A
VO
BW
A
m
f
m
CS
BW
p
THD
−
−
−
27
|Z
O
|
R
in
C
in
e
n
−
−
−
−
−
−
−
0.0024
0.014
0.024
150
200
10
8.0
7.5
0.33
0.15
−
−
−
−
−
−
−
−
−
−
W
kW
pF
nV/
√
Hz
2.5
−
−
−
−
−
−
2.0
5.0
50
3.0
15
60
−120
32
−
−
−
−
−
−
−
−
MHz
dB
MHz
dB
Deg
dB
kHz
%
Min
Typ
Max
Unit
V/ms
29
i
n
pA/
√
Hz
PD (MAX), MAXIMUM POWER DISSIPATION (mW)
2400
V IO , INPUT OFFSET VOLTAGE (mV)
2000
1600
MC33179D
1200
800
400
0
−60 −40 −20
MC33178D
MC33178P/9P
4.0
3.0
2.0
1.0
0
−1.0
−2.0
−3.0
−4.0
−55
−25
0
25
50
75
100
125
Unit 2
Unit 3
Unit 1
V
CC
= +15 V
V
EE
= −15 V
R
S
= 10
W
V
CM
= 0 V
0
20
40
60
80 100 120 140 160 180
T
A
, AMBIENT TEMPERATURE (°C)
T
A
, AMBIENT TEMPERATURE (°C)
Figure 2. Maximum Power Dissipation
versus Temperature
Figure 3. Input Offset Voltage versus
Temperature for 3 Typical Units
http://onsemi.com
5
京公网安备 11010802033920号
EEWORLD
