BUL742C
BULB742C
High voltage fast-switching
NPN power transistor
Features
■
■
■
■
TAB
Low spread of dynamic parameters
High voltage capability
Minimum lot-to-lot spread for reliable operation
1
3
2
1
3
2
Very high switching speed
TAB
TO-220
TO-220FP
TAB
Applications
■
■
Electronic ballast for fluorescent lighting
Switch mode power supplies
I²PAK
3
12
3
1
Description
The devices are manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and high voltage capability.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand an high collector current
level during breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.
Figure 1.
D²PAK
Internal schematic diagram
Table 1.
Device summary
Markings
BUL742C
BUL742CFP
BULB742C
BULB742C
Packages
TO-220
TO-220FP
I²PAK
D²PAK
Tape and reel
Tube
Packaging
Order codes
BUL742C
BUL742CFP
BULB742C-1
BULB742CT4
November 2010
Doc ID 9488 Rev 4
1/14
www.st.com
14
Electrical ratings
BUL742C, BULB742C
1
Electrical ratings
Table 2.
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
TOT
T
STG
V
ISO
T
J
Absolute maximum ratings
Parameter
Collector-emitter voltage (V
BE
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0, I
B
= 2 A, t
p
< 10 ms)
Collector current
Collector peak current (t
P
< 5 ms)
Base current
Base peak current (t
P
< 5 ms)
Total dissipation at T
c
= 25 °C
Storage temperature
Isolation withstand voltage (RMS) from all three
leads to external heatsink
Max. operating junction temperature
150
70
-65 to 150
1500
TO-220 /
D²PAK / I²PAK
1050
400
V
(BR)EBO
4
8
2
4
30
TO-220FP
Unit
V
V
V
A
A
A
A
W
°C
V
°C
Table 3.
Symbol
R
thJC
R
thJA
Thermal data
Parameter
Thermal resistance junction - case
Thermal resistance junction - ambient
TO-220/D²PAK/I²PAK
1.79
62.5
TO-220FP
4.17
62.5
Unit
°C/W
°C/W
2/14
Doc ID 9488 Rev 4
BUL742C, BULB742C
Electrical characteristics
2
Electrical characteristics
T
case
= 25°C unless otherwise specified.
Table 4.
Symbol
I
CES
I
CEO
V
(BR)EBO
(1)
Electrical characteristics
Parameter
Collector cut-off current
(V
BE
= 0)
Collector cut-off current
(I
B
= 0)
Emitter base breakdown
voltage (I
C
= 0)
Collector-emitter
sustaining voltage
(I
B
= 0)
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
DC current gain
Resistive load
Storage time
Fall time
Repetitive avalanche
energy
Test conditions
V
CE
= 1050 V
V
CE
= 400 V
I
E
= 1 mA
15
Min.
Typ.
0.2
10
19
Max.
10
250
24
Unit
µA
µA
V
V
CEO(sus)
I
C
= 10 mA
I
B
= 0.2 A
I
C
= 1 A
_
I
C
=
3.5
A
_ _
I
B
= 1 A
I
C
=
3.5
A
I
C
= 0.1 A
I
C
= 0.8 A
_
_
I
B
= 1 A
V
CE
= 5 V
V
CE
=
3
V
400
450
0.15
0.6
1.1
0.5
1.5
1.5
100
50
3.5
500
V
V
V
V
V
CE(sat) (1)
V
BE(sat) (1)
h
FE (1)
48
25
75
35
2.4
350
t
s
t
f
E
ar
I
C
= 2 A
V
CC
= 125 V
I
B1
= - I
B2
= 400 mA
t
p
=
300
µs V
BE(off)
= - 5 V
L = 2 mH
V
BE(off)
= -5 V
C = 1.8 nF
6
µs
ns
mJ
1. Pulse test: pulse duration
≤
300
µs, duty cycle
≤
2 %.
Doc ID 9488 Rev 4
3/14
Electrical characteristics
BUL742C, BULB742C
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for
TO-220/I²PAK/D²PAK
Figure 3.
Safe operating area for
TO-220FP
Figure 4.
Derating curve
Figure 5.
Output characteristics
Figure 6.
DC current gain (V
CE
= 3 V)
Figure 7.
DC current gain (V
CE
= 5 V)
4/14
Doc ID 9488 Rev 4
BUL742C, BULB742C
Figure 8.
Collector - emitter saturation Figure 9.
voltage
Electrical characteristics
Base-emitter saturation
voltage
Figure 10. Resistive load switching on
times (h
FE
= 5)
Figure 11. Resistive load switching off
times (h
FE
= 5)
Figure 12. Resistive load switching on
times (h
FE
= 10)
Figure 13. Resistive load switching off
times (h
FE
= 10)
Doc ID 9488 Rev 4
5/14
京公网安备 11010802033920号
EEWORLD
