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BU808DFI

Description
Darlington Transistors NPN Sw Darlington
CategoryDiscrete semiconductor    The transistor   
File Size233KB,7 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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BU808DFI Overview

Darlington Transistors NPN Sw Darlington

BU808DFI Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeTO-218
package instructionISOWATT218, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)8 A
Collector-emitter maximum voltage700 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)60
JEDEC-95 codeTO-218
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment52 W
Maximum power dissipation(Abs)50 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)3800 ns
VCEsat-Max1.6 V
®
BU808DFI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER DARLINGTON TRANSISTOR
s
s
s
s
s
s
s
STMicroelectronics PREFERRED
SALESTYPE
NPN MONOLITHIC DARLINGTON WITH
INTEGRATED FREE-WHEELING DIODE
HIGH VOLTAGE CAPABILITY ( > 1400 V )
HIGH DC CURRENT GAIN ( TYP. 150 )
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
LOW BASE-DRIVE REQUIREMENTS
DEDICATED APPLICATION NOTE AN1184
APPLICATIONS
s
COST EFFECTIVE SOLUTION FOR
HORIZONTAL DEFLECTION IN LOW END
TV UP TO 21 INCHES.
DESCRIPTION
The BU808DFI is a NPN transistor in monolithic
Darlington configuration. It is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance.
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ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
I
BM
P
tot
V
isol
T
stg
T
j
I
CM
Parameter
Collector-Base Voltage (I
E
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector-Emitter Voltage (I
B
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
c
= 25
o
C
Insulation Withstand Voltage (RMS) from All
Three Leads to Exernal Heatsink
Storage Temperature
Max. Operating Junction Temperature
b
O
so
te
le
ISOWATT218
ro
P
uc
d
3
2
1
s)
t(
INTERNAL SCHEMATIC DIAGRAM
P
e
od
r
s)
t(
uc
Value
1400
700
5
8
10
3
6
52
2500
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
V
o
o
C
C
April 2002
1/7
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